FR2454704B1 - - Google Patents
Info
- Publication number
- FR2454704B1 FR2454704B1 FR7910065A FR7910065A FR2454704B1 FR 2454704 B1 FR2454704 B1 FR 2454704B1 FR 7910065 A FR7910065 A FR 7910065A FR 7910065 A FR7910065 A FR 7910065A FR 2454704 B1 FR2454704 B1 FR 2454704B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/983—Zener diodes
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7910065A FR2454704A1 (fr) | 1979-04-20 | 1979-04-20 | Diode a avalanche de type planar a tension de claquage comprise entre 4 et 8 volts |
| EP80400420A EP0018862B1 (fr) | 1979-04-20 | 1980-03-28 | Diode à avalanche de type planar à tension de claquage comprise entre 4 et 8 volts et procédé de fabrication |
| DE8080400420T DE3069258D1 (en) | 1979-04-20 | 1980-03-28 | Planar avalanche diode with breakdown voltage between 4 and 8 volts, and method of making it |
| JP4877680A JPS55141762A (en) | 1979-04-20 | 1980-04-15 | Electron avalanche diode and method of fabricating same |
| US06/140,486 US4323909A (en) | 1979-04-20 | 1980-04-15 | Planar avalanche diode with a breakdown voltage between 4 and 8 volts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7910065A FR2454704A1 (fr) | 1979-04-20 | 1979-04-20 | Diode a avalanche de type planar a tension de claquage comprise entre 4 et 8 volts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2454704A1 FR2454704A1 (fr) | 1980-11-14 |
| FR2454704B1 true FR2454704B1 (enExample) | 1982-06-04 |
Family
ID=9224549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7910065A Granted FR2454704A1 (fr) | 1979-04-20 | 1979-04-20 | Diode a avalanche de type planar a tension de claquage comprise entre 4 et 8 volts |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4323909A (enExample) |
| EP (1) | EP0018862B1 (enExample) |
| JP (1) | JPS55141762A (enExample) |
| DE (1) | DE3069258D1 (enExample) |
| FR (1) | FR2454704A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0043734B1 (en) * | 1980-07-08 | 1985-10-16 | Fujitsu Limited | Avalanche photodiodes |
| NL187942C (nl) * | 1980-08-18 | 1992-02-17 | Philips Nv | Zenerdiode en werkwijze ter vervaardiging daarvan. |
| US4999683A (en) * | 1988-12-30 | 1991-03-12 | Sanken Electric Co., Ltd. | Avalanche breakdown semiconductor device |
| US5150176A (en) * | 1992-02-13 | 1992-09-22 | Motorola, Inc. | PN junction surge suppressor structure with moat |
| US20050275065A1 (en) * | 2004-06-14 | 2005-12-15 | Tyco Electronics Corporation | Diode with improved energy impulse rating |
| JP6642507B2 (ja) * | 2016-10-18 | 2020-02-05 | 株式会社デンソー | 半導体装置およびその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| JPS5144387A (ja) * | 1974-10-01 | 1976-04-15 | Satoji Shimizu | Tajikutatsupumashiin no tatsupusetsusonkenchisochi |
| US4030117A (en) * | 1975-03-10 | 1977-06-14 | International Telephone And Telegraph Corporation | Zener diode |
| US4075649A (en) * | 1975-11-25 | 1978-02-21 | Siemens Corporation | Single chip temperature compensated reference diode and method for making same |
| JPS5264883A (en) * | 1975-11-26 | 1977-05-28 | Fuji Electric Co Ltd | Semiconductor element |
| CA1080836A (en) * | 1977-09-21 | 1980-07-01 | Paul P. Webb | Multi-element avalanche photodiode having reduced electrical noise |
-
1979
- 1979-04-20 FR FR7910065A patent/FR2454704A1/fr active Granted
-
1980
- 1980-03-28 DE DE8080400420T patent/DE3069258D1/de not_active Expired
- 1980-03-28 EP EP80400420A patent/EP0018862B1/fr not_active Expired
- 1980-04-15 JP JP4877680A patent/JPS55141762A/ja active Granted
- 1980-04-15 US US06/140,486 patent/US4323909A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55141762A (en) | 1980-11-05 |
| JPH029464B2 (enExample) | 1990-03-02 |
| US4323909A (en) | 1982-04-06 |
| FR2454704A1 (fr) | 1980-11-14 |
| DE3069258D1 (en) | 1984-10-31 |
| EP0018862B1 (fr) | 1984-09-26 |
| EP0018862A1 (fr) | 1980-11-12 |