FR2452791A1 - Transistor a effet de champ a frequence de coupure elevee - Google Patents

Transistor a effet de champ a frequence de coupure elevee

Info

Publication number
FR2452791A1
FR2452791A1 FR7907803A FR7907803A FR2452791A1 FR 2452791 A1 FR2452791 A1 FR 2452791A1 FR 7907803 A FR7907803 A FR 7907803A FR 7907803 A FR7907803 A FR 7907803A FR 2452791 A1 FR2452791 A1 FR 2452791A1
Authority
FR
France
Prior art keywords
gallium arsenide
frequency
high cut
fet
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7907803A
Other languages
English (en)
French (fr)
Other versions
FR2452791B1 (enExample
Inventor
Daniel Delagebeaudeuf
Trong Linh Nuyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7907803A priority Critical patent/FR2452791A1/fr
Priority to FR7922301A priority patent/FR2465317A2/fr
Priority to DE8080400343T priority patent/DE3068161D1/de
Priority to EP80400343A priority patent/EP0017531B1/fr
Priority to JP4013280A priority patent/JPS55160473A/ja
Publication of FR2452791A1 publication Critical patent/FR2452791A1/fr
Priority to US06/353,100 priority patent/US4471366A/en
Application granted granted Critical
Publication of FR2452791B1 publication Critical patent/FR2452791B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/801FETs having heterojunction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
FR7907803A 1979-03-28 1979-03-28 Transistor a effet de champ a frequence de coupure elevee Granted FR2452791A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7907803A FR2452791A1 (fr) 1979-03-28 1979-03-28 Transistor a effet de champ a frequence de coupure elevee
FR7922301A FR2465317A2 (fr) 1979-03-28 1979-09-06 Transistor a effet de champ a frequence de coupure elevee
DE8080400343T DE3068161D1 (en) 1979-03-28 1980-03-14 Field-effect transistor with high cut-off frequency and method of making it
EP80400343A EP0017531B1 (fr) 1979-03-28 1980-03-14 Transistor à effet de champ à fréquence de coupure élevée et son procédé de réalisation
JP4013280A JPS55160473A (en) 1979-03-28 1980-03-28 Semiconductor device and method of fabricating same
US06/353,100 US4471366A (en) 1979-03-28 1982-03-01 Field effect transistor with high cut-off frequency and process for forming same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7907803A FR2452791A1 (fr) 1979-03-28 1979-03-28 Transistor a effet de champ a frequence de coupure elevee

Publications (2)

Publication Number Publication Date
FR2452791A1 true FR2452791A1 (fr) 1980-10-24
FR2452791B1 FR2452791B1 (enExample) 1982-06-04

Family

ID=9223666

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7907803A Granted FR2452791A1 (fr) 1979-03-28 1979-03-28 Transistor a effet de champ a frequence de coupure elevee

Country Status (1)

Country Link
FR (1) FR2452791A1 (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2268363A1 (enExample) * 1974-04-17 1975-11-14 Matsushita Electronics Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2268363A1 (enExample) * 1974-04-17 1975-11-14 Matsushita Electronics Corp

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *

Also Published As

Publication number Publication date
FR2452791B1 (enExample) 1982-06-04

Similar Documents

Publication Publication Date Title
US5925895A (en) Silicon carbide power MESFET with surface effect supressive layer
CA2199948A1 (en) Self-aligned field-effect transistor for high frequency applications
WO2000004587A3 (en) Nitride based transistors on semi-insulating silicon carbide substrates
GB1180186A (en) Improvements relating to Field-effect Transistors
US4507845A (en) Method of making field effect transistors with opposed source _and gate regions
Chen et al. High-breakdown-voltage MESFET with a low-temperature-grown GaAs passivation layer and overlapping gate structure
EP0323220A3 (en) Hetero junction field effect transistor device
FR2452791A1 (fr) Transistor a effet de champ a frequence de coupure elevee
US6376886B2 (en) Field effect transistor having comb-shaped lead-out electrodes capable of reducing parasitic capacitance therebetween
Huang et al. An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for X-and Ku-band power applications
Kawakami et al. n-channel formation on semi-insulating InP surface by MISFET
US5670804A (en) PN-junction gate FET
Tung et al. High-speed two-dimensional electron-gas FET logic
Chao et al. High performance 0.1 µm gate-length planar-doped HEMTs
Bouloukou et al. Very low leakage InGaAs/InAlAs pHEMTs for broadband (300 MHz to 2 GHz) low-noise applications
GB1507701A (en) Semiconductor devices
US5405793A (en) Method for forming a linear field effect transistor
Nishihori et al. A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers
US5701020A (en) Pseudomorphic step-doped-channel field-effect transistor
Park et al. RF and DC characterization of P-channel Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate lengths as small as 0.25 mu m
Jay et al. Design of TEGFET devices for optimum low-noise high-frequency operation
Abid et al. Direct-Schottky-contact InP MESFET
Reynoso-Hernandez et al. Microwave noise figure in MESFETs and HEMTs with kink-effect and (or) parallel conduction
Prost et al. High speed, high gain InP-based heterostructure FETs with high breakdown voltage and low leakage
Ho et al. Monolithic integration of HEMTs and Schottky diodes for millimeter wave circuits