FR2452791A1 - Transistor a effet de champ a frequence de coupure elevee - Google Patents
Transistor a effet de champ a frequence de coupure eleveeInfo
- Publication number
- FR2452791A1 FR2452791A1 FR7907803A FR7907803A FR2452791A1 FR 2452791 A1 FR2452791 A1 FR 2452791A1 FR 7907803 A FR7907803 A FR 7907803A FR 7907803 A FR7907803 A FR 7907803A FR 2452791 A1 FR2452791 A1 FR 2452791A1
- Authority
- FR
- France
- Prior art keywords
- gallium arsenide
- frequency
- high cut
- fet
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 title 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 238000009825 accumulation Methods 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/801—FETs having heterojunction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7907803A FR2452791A1 (fr) | 1979-03-28 | 1979-03-28 | Transistor a effet de champ a frequence de coupure elevee |
| FR7922301A FR2465317A2 (fr) | 1979-03-28 | 1979-09-06 | Transistor a effet de champ a frequence de coupure elevee |
| DE8080400343T DE3068161D1 (en) | 1979-03-28 | 1980-03-14 | Field-effect transistor with high cut-off frequency and method of making it |
| EP80400343A EP0017531B1 (fr) | 1979-03-28 | 1980-03-14 | Transistor à effet de champ à fréquence de coupure élevée et son procédé de réalisation |
| JP4013280A JPS55160473A (en) | 1979-03-28 | 1980-03-28 | Semiconductor device and method of fabricating same |
| US06/353,100 US4471366A (en) | 1979-03-28 | 1982-03-01 | Field effect transistor with high cut-off frequency and process for forming same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7907803A FR2452791A1 (fr) | 1979-03-28 | 1979-03-28 | Transistor a effet de champ a frequence de coupure elevee |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2452791A1 true FR2452791A1 (fr) | 1980-10-24 |
| FR2452791B1 FR2452791B1 (OSRAM) | 1982-06-04 |
Family
ID=9223666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7907803A Granted FR2452791A1 (fr) | 1979-03-28 | 1979-03-28 | Transistor a effet de champ a frequence de coupure elevee |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2452791A1 (OSRAM) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2268363A1 (OSRAM) * | 1974-04-17 | 1975-11-14 | Matsushita Electronics Corp |
-
1979
- 1979-03-28 FR FR7907803A patent/FR2452791A1/fr active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2268363A1 (OSRAM) * | 1974-04-17 | 1975-11-14 | Matsushita Electronics Corp |
Non-Patent Citations (1)
| Title |
|---|
| EXBK/78 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2452791B1 (OSRAM) | 1982-06-04 |
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