FR2447609A1 - Procede d'encapsulation d'une diode utilisable en tres haute frequence, et structure semiconductrice ainsi obtenue - Google Patents
Procede d'encapsulation d'une diode utilisable en tres haute frequence, et structure semiconductrice ainsi obtenueInfo
- Publication number
- FR2447609A1 FR2447609A1 FR7902099A FR7902099A FR2447609A1 FR 2447609 A1 FR2447609 A1 FR 2447609A1 FR 7902099 A FR7902099 A FR 7902099A FR 7902099 A FR7902099 A FR 7902099A FR 2447609 A1 FR2447609 A1 FR 2447609A1
- Authority
- FR
- France
- Prior art keywords
- ring
- diode
- encapsulating
- fiber
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W72/00—
-
- H10W44/20—
Landscapes
- Waveguide Connection Structure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7902099A FR2447609A1 (fr) | 1979-01-26 | 1979-01-26 | Procede d'encapsulation d'une diode utilisable en tres haute frequence, et structure semiconductrice ainsi obtenue |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7902099A FR2447609A1 (fr) | 1979-01-26 | 1979-01-26 | Procede d'encapsulation d'une diode utilisable en tres haute frequence, et structure semiconductrice ainsi obtenue |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2447609A1 true FR2447609A1 (fr) | 1980-08-22 |
| FR2447609B1 FR2447609B1 (cg-RX-API-DMAC10.html) | 1982-05-14 |
Family
ID=9221266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7902099A Granted FR2447609A1 (fr) | 1979-01-26 | 1979-01-26 | Procede d'encapsulation d'une diode utilisable en tres haute frequence, et structure semiconductrice ainsi obtenue |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2447609A1 (cg-RX-API-DMAC10.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0046107A1 (fr) * | 1980-08-08 | 1982-02-17 | Thomson-Csf | Dispositif semiconducteur utilisable en très haute fréquence, et son procédé de fabrication |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2277459A1 (fr) * | 1974-07-05 | 1976-01-30 | Mitsubishi Electric Corp | Semi-conducteur haute frequence |
-
1979
- 1979-01-26 FR FR7902099A patent/FR2447609A1/fr active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2277459A1 (fr) * | 1974-07-05 | 1976-01-30 | Mitsubishi Electric Corp | Semi-conducteur haute frequence |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0046107A1 (fr) * | 1980-08-08 | 1982-02-17 | Thomson-Csf | Dispositif semiconducteur utilisable en très haute fréquence, et son procédé de fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2447609B1 (cg-RX-API-DMAC10.html) | 1982-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |