FR2435124A1 - Procede de formation d'un film epitaxial a phase liquide sur une pastille - Google Patents

Procede de formation d'un film epitaxial a phase liquide sur une pastille

Info

Publication number
FR2435124A1
FR2435124A1 FR7919130A FR7919130A FR2435124A1 FR 2435124 A1 FR2435124 A1 FR 2435124A1 FR 7919130 A FR7919130 A FR 7919130A FR 7919130 A FR7919130 A FR 7919130A FR 2435124 A1 FR2435124 A1 FR 2435124A1
Authority
FR
France
Prior art keywords
pellet
forming
epitaxial film
liquid phase
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7919130A
Other languages
English (en)
Other versions
FR2435124B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2435124A1 publication Critical patent/FR2435124A1/fr
Application granted granted Critical
Publication of FR2435124B1 publication Critical patent/FR2435124B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy

Abstract

Procédé de formation d'un film épitaxial d'épaisseur uniforme sur une pastille. La pastille 24, disposée sur un porte-pastilles 10, est immergée horizontalement dans la masse fondue de matériau à déposer. Puis, les pastilles sont inclinées d'un angle d'environ 20 degrés et on procède à leur retrait de la masse fondue. Après avoir retrouvé leur position horizontale, ces pastilles sont centrifugées. Utilisable pour la réalisation de micro-plaquettes au sein desquelles des bulles magnétiques sont formées.
FR7919130A 1978-08-28 1979-07-20 Procede de formation d'un film epitaxial a phase liquide sur une pastille Granted FR2435124A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/937,243 US4190683A (en) 1978-08-28 1978-08-28 Method for forming a liquid phase epitaxial film on a wafer

Publications (2)

Publication Number Publication Date
FR2435124A1 true FR2435124A1 (fr) 1980-03-28
FR2435124B1 FR2435124B1 (fr) 1983-10-28

Family

ID=25469670

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7919130A Granted FR2435124A1 (fr) 1978-08-28 1979-07-20 Procede de formation d'un film epitaxial a phase liquide sur une pastille

Country Status (8)

Country Link
US (1) US4190683A (fr)
JP (1) JPS5533087A (fr)
AU (1) AU524571B2 (fr)
CA (1) CA1118666A (fr)
DE (1) DE2933172A1 (fr)
FR (1) FR2435124A1 (fr)
GB (1) GB2028679B (fr)
IT (1) IT1163695B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3315794A1 (de) * 1983-04-30 1984-10-31 Telefunken electronic GmbH, 7100 Heilbronn Vorrichtung zur fluessigphasenepitaxie
DE4206374A1 (de) * 1992-02-29 1993-09-02 Telefunken Microelectron Verfahren und vorrichtungen zur epitaxie

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4350116A (en) * 1979-09-28 1982-09-21 International Business Machines Corporation Holder for liquid phase epitaxial growth
JPH06103589B2 (ja) * 1984-03-02 1994-12-14 株式会社日立製作所 磁気バブルガ−ネツト膜の形成方法
US6395101B1 (en) * 1999-10-08 2002-05-28 Semitool, Inc. Single semiconductor wafer processor
WO2004104275A1 (fr) * 2003-05-16 2004-12-02 Caracal, Inc. Mise en rotation electromagnetique d'un substrat metallique
TWI355524B (en) * 2005-09-09 2012-01-01 Hon Hai Prec Ind Co Ltd Medical treatment system of radio frequency identi
JP5205737B2 (ja) * 2006-10-13 2013-06-05 株式会社Ｓｕｍｃｏ シリコンウェーハの保持方法および保持治具
US20100319168A1 (en) * 2008-04-15 2010-12-23 Atomic Energy Council - Institute Of Nuclear Energy Research Clip for water

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2378562A1 (fr) * 1976-11-23 1978-08-25 Philips Nv Procede pour la croissance d'un couche epitaxiale monocristalline sur un substrat, et support de substrat a utiliser pour la mise en oeuvre de ce procede

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL105208C (fr) * 1954-04-19
US3198657A (en) * 1964-09-17 1965-08-03 Ibm Process for spin coating objects
US3486937A (en) * 1967-03-24 1969-12-30 Perkin Elmer Corp Method of growing a single crystal film of a ferrimagnetic material
US3705048A (en) * 1970-11-06 1972-12-05 Perkin Elmer Corp Clinical spinner
US3730760A (en) * 1971-11-26 1973-05-01 Ibm Vertical centrifugal spin coating method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2378562A1 (fr) * 1976-11-23 1978-08-25 Philips Nv Procede pour la croissance d'un couche epitaxiale monocristalline sur un substrat, et support de substrat a utiliser pour la mise en oeuvre de ce procede

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3315794A1 (de) * 1983-04-30 1984-10-31 Telefunken electronic GmbH, 7100 Heilbronn Vorrichtung zur fluessigphasenepitaxie
DE4206374A1 (de) * 1992-02-29 1993-09-02 Telefunken Microelectron Verfahren und vorrichtungen zur epitaxie
DE4206374C2 (de) * 1992-02-29 2000-11-02 Vishay Semiconductor Gmbh Verfahren und Vorrichtungen zur Epitaxie

Also Published As

Publication number Publication date
GB2028679B (en) 1982-07-14
CA1118666A (fr) 1982-02-23
DE2933172A1 (de) 1980-03-13
US4190683A (en) 1980-02-26
IT1163695B (it) 1987-04-08
IT7925048A0 (it) 1979-08-10
JPS5533087A (en) 1980-03-08
GB2028679A (en) 1980-03-12
FR2435124B1 (fr) 1983-10-28
AU524571B2 (en) 1982-09-23
AU4871879A (en) 1980-03-06

Similar Documents

Publication Publication Date Title
CA1255191A (fr) Methode et dispositif de production de feuilles semiconductrices
US4447289A (en) Process for the manufacture of coarsely crystalline to monocrystalline sheets of semiconductor material
FR2435124A1 (fr) Procede de formation d'un film epitaxial a phase liquide sur une pastille
US4233338A (en) Processes for deposition of thin films of crystalline silicon on graphite
FR2518429B1 (fr) Installation pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide
EP0099948B1 (fr) Procédé pour fabriquer de l'aluminium de grande pureté
BE841888A (fr) Procede et installation pour l'affinage thermique de cuivre a haute teneur en impuretes en phase liquide fondue
Schaefer et al. Initiation of dendrites by crystal imperfections
KR950003483A (ko) 입상재에서 제조한 용융물의 결정화에 의한 응고로 팽창되는 반도체재료로드 또는 블록의 제조방법 및 그 방법을 실시하는 장치
US3966445A (en) Freeze refining method
BE878886A (fr) Tube a paroi mince en polymere synthetique filable a partir de la masse fondue et procede pour sa fabrication
BE880753A (fr) Tube a paroi mince en polymere synthetique filable a partir de la masse fondue et procede pour sa fabrication
FR2408414A1 (fr) Procede pour la preparation de granules de metaux a bas point de fusion
US5090965A (en) Process for the separation of substances by cooling crystallization
US3734718A (en) Magnesium-magnesium chloride bath separation
US20080118767A1 (en) Material for Vapor Sources of Alkali and Alkaline Earth Metals and a Method of its Production
BE880839A (fr) Dispositif et procede pour faire croitre des cristaux de silicium sous vide, a partir de matiere fondue
JPS598688A (ja) 薄膜結晶の製造方法
US4547259A (en) Manufacture of sheets of controlled thickness from meltable material
JPS56149399A (en) Liquid phase epitaxial growing method
BE793868A (fr) Procede et dispositif pour interrompre l'ecoulement de matiere en fusion dans une installation de coulee
Wood Rapid Solidification Processing and Materials--a Technical Overview
Robertson A study of the growth and growth mechanism of potassium dihydrogen orthophosphate crystals from aqueous solution
SU599426A2 (ru) Способ производства фасонных отливок
Zhuk et al. Investigations of the Chemical Heterogeneity in a Solidifying Ingot

Legal Events

Date Code Title Description
ST Notification of lapse