FR2431757A1 - Doped metal oxide substrate for varistors prodn. - by adding sufficient dopant to give grain boundary deposits in base metal oxide, prior to melt diffusion of surface layer - Google Patents
Doped metal oxide substrate for varistors prodn. - by adding sufficient dopant to give grain boundary deposits in base metal oxide, prior to melt diffusion of surface layerInfo
- Publication number
- FR2431757A1 FR2431757A1 FR7916285A FR7916285A FR2431757A1 FR 2431757 A1 FR2431757 A1 FR 2431757A1 FR 7916285 A FR7916285 A FR 7916285A FR 7916285 A FR7916285 A FR 7916285A FR 2431757 A1 FR2431757 A1 FR 2431757A1
- Authority
- FR
- France
- Prior art keywords
- metal oxide
- base metal
- varistors
- prodn
- surface layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
Abstract
Semiconductive metallic oxide body consists of a semiconductive metal oxide and dopant materials, the dopant materials being formed as deposits in the grain boundaries. The body specifically has a textured or a coarse grain structure, (>30 mu). The body is prepd. by adding to the base metal oxide dopant materials in sufficient quantity to exceed their solubility in the base oxide, mixing, shaping the green ceramic and sintering for a long time to develop the desired grain texture. The pref. base metal oxide is ZnO, and the dopants are oxides, fluorides or hydrolysable salts of Co, Ni, Cr, Ti, Mn and Al.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DD20682178A DD137867A1 (en) | 1978-07-20 | 1978-07-20 | SUBSTRATE FOR CERAMIC SEMICONDUCTOR RESISTORS AND MANUFACTURING METHOD |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2431757A1 true FR2431757A1 (en) | 1980-02-15 |
FR2431757B1 FR2431757B1 (en) | 1984-10-19 |
Family
ID=5513680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7916285A Granted FR2431757A1 (en) | 1978-07-20 | 1979-06-25 | Doped metal oxide substrate for varistors prodn. - by adding sufficient dopant to give grain boundary deposits in base metal oxide, prior to melt diffusion of surface layer |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5533086A (en) |
DD (1) | DD137867A1 (en) |
DE (1) | DE2921497A1 (en) |
FR (1) | FR2431757A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3231118C1 (en) * | 1982-08-20 | 1983-11-03 | Siemens AG, 1000 Berlin und 8000 München | Combined circuit arrangement with varistor and method for its production |
EP3018111A1 (en) * | 2014-11-07 | 2016-05-11 | Plansee SE | Metal oxide thin film, method for depositing metal oxide thin film and device comprising metal oxide thin film |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3723175A (en) * | 1967-10-09 | 1973-03-27 | Matsushita Electric Ind Co Ltd | Nonlinear resistors of bulk type |
FR2246038A1 (en) * | 1973-09-27 | 1975-04-25 | Gen Electric | |
DE2642567A1 (en) * | 1975-09-25 | 1977-04-07 | Gen Electric | METAL OXYDE VARISTOR WITH IMPROVED ELECTRICAL PROPERTIES |
FR2395577A1 (en) * | 1977-06-23 | 1979-01-19 | Hermsdorf Keramik Veb | Ceramic semiconductor resistor, esp. thermistor and varistor prodn. - by contacting one side of moulded base powder with metal oxide and heating |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH504764A (en) * | 1968-12-10 | 1971-03-15 | Hugo Dipl Phys Wyss | Method for producing an electrically conductive resistance body |
GB1346851A (en) * | 1971-05-21 | 1974-02-13 | Matsushita Electric Ind Co Ltd | Varistors |
US3953371A (en) * | 1973-11-12 | 1976-04-27 | General Electric Company | Controlled grain size metal oxide varistor and process for making |
-
1978
- 1978-07-20 DD DD20682178A patent/DD137867A1/en not_active IP Right Cessation
-
1979
- 1979-05-26 DE DE19792921497 patent/DE2921497A1/en not_active Withdrawn
- 1979-06-25 FR FR7916285A patent/FR2431757A1/en active Granted
- 1979-07-09 JP JP8681879A patent/JPS5533086A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3723175A (en) * | 1967-10-09 | 1973-03-27 | Matsushita Electric Ind Co Ltd | Nonlinear resistors of bulk type |
FR2246038A1 (en) * | 1973-09-27 | 1975-04-25 | Gen Electric | |
DE2642567A1 (en) * | 1975-09-25 | 1977-04-07 | Gen Electric | METAL OXYDE VARISTOR WITH IMPROVED ELECTRICAL PROPERTIES |
FR2395577A1 (en) * | 1977-06-23 | 1979-01-19 | Hermsdorf Keramik Veb | Ceramic semiconductor resistor, esp. thermistor and varistor prodn. - by contacting one side of moulded base powder with metal oxide and heating |
Also Published As
Publication number | Publication date |
---|---|
FR2431757B1 (en) | 1984-10-19 |
DD137867A1 (en) | 1979-09-26 |
DE2921497A1 (en) | 1980-01-31 |
JPS5533086A (en) | 1980-03-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |