FR2420882A1 - Circuit de commutation - Google Patents

Circuit de commutation

Info

Publication number
FR2420882A1
FR2420882A1 FR7907567A FR7907567A FR2420882A1 FR 2420882 A1 FR2420882 A1 FR 2420882A1 FR 7907567 A FR7907567 A FR 7907567A FR 7907567 A FR7907567 A FR 7907567A FR 2420882 A1 FR2420882 A1 FR 2420882A1
Authority
FR
France
Prior art keywords
electrode
gate
switching circuit
anode
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7907567A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2420882A1 publication Critical patent/FR2420882A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
    • H03K4/60—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor
    • H03K4/62—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/83—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Details Of Television Scanning (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

a. Circuit de commutation. b. Circuit caractérisé par un second circuit de commutation à commande par la porte, ayant une seconde électrode d'anode, une seconde électrode de porte et une seconde électrode de cathode, la première et la seconde électrodes d'anode étant réunies, la seconde électrode de porte étant couplée à la source d'entraînement pour recevoir le signal de commande de commutation, la seconde électrode de cathode étant reliée à la première électrode de porte et une diode ayant une cathode et une anode branchées entre la première et la seconde électrodes de porte
FR7907567A 1978-03-25 1979-03-26 Circuit de commutation Pending FR2420882A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3435678A JPS54126454A (en) 1978-03-25 1978-03-25 Switching circuit

Publications (1)

Publication Number Publication Date
FR2420882A1 true FR2420882A1 (fr) 1979-10-19

Family

ID=12411871

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7907567A Pending FR2420882A1 (fr) 1978-03-25 1979-03-26 Circuit de commutation

Country Status (6)

Country Link
US (1) US4393337A (fr)
JP (1) JPS54126454A (fr)
CA (1) CA1131769A (fr)
DE (1) DE2911711A1 (fr)
FR (1) FR2420882A1 (fr)
GB (1) GB2018056B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529917A (en) * 1982-05-13 1985-07-16 Zenith Electronics Corporation Drive circuit for a horizontal output transformer
GB2186138B (en) * 1986-01-29 1989-12-06 Thorn Emi Ferguson Television driver circuit
US4914774A (en) * 1987-10-22 1990-04-10 Ford New Holland, Inc. Leaf loading machine for use with towing machine
JP3234159B2 (ja) * 1996-07-15 2001-12-04 東芝マイクロエレクトロニクス株式会社 出力回路
DE19932944B4 (de) * 1999-07-14 2005-10-20 Infineon Technologies Ag Schaltungsanordnung zum Ansteuern einer Last
US7602228B2 (en) 2007-05-22 2009-10-13 Semisouth Laboratories, Inc. Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein
USD794465S1 (en) 2015-08-28 2017-08-15 The Procter & Gamble Company Container
USD793867S1 (en) 2015-08-28 2017-08-08 The Procter & Gamble Company Container
USD793250S1 (en) 2015-09-07 2017-08-01 The Procter & Gamble Company Container

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1557614A (fr) * 1966-04-19 1969-02-21
FR96227E (fr) * 1968-12-31 1972-05-19 Silec Liaisons Elec Dispositif électronique a semi-conducteurs pour commander le passage du courant électrique.

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496390A (en) * 1965-12-09 1970-02-17 George J Fischer Multi-junction controllable unit with bi-directional current path from anode to gate to render said unit bi-directional
US3603817A (en) * 1968-10-10 1971-09-07 Amf Inc Solid state alternating current switch means for selective energization of parallel loads
US3652877A (en) * 1969-05-14 1972-03-28 Us Navy Radiation compensation circuit
US3600665A (en) * 1969-09-30 1971-08-17 Westinghouse Electric Corp Firing circuit for gate-controlled power switches
FR2135423B1 (fr) * 1971-05-04 1973-05-11 Radiotechnique Compelec
GB1430637A (en) * 1972-05-15 1976-03-31 Sony Corp Switching circuits comprising a gate controlled switching device
JPS5646294B2 (fr) * 1973-07-23 1981-11-02
JPS584509B2 (ja) * 1973-12-28 1983-01-26 日本電気株式会社 増幅回路
US3896317A (en) * 1973-12-28 1975-07-22 Ibm Integrated monolithic switch for high voltage applications
US3947723A (en) * 1974-03-25 1976-03-30 Lockheed Missiles & Space Company, Inc. Low power high frequency horizontal deflection amplifier
US4189651A (en) * 1975-06-20 1980-02-19 Mitsubishi Denki Kabushiki Kaisha Transistor switch device
US4002931A (en) * 1975-06-27 1977-01-11 Intel Corporation Integrated circuit bipolar bootstrap driver
JPS5210012A (en) * 1975-07-14 1977-01-26 Hitachi Ltd Pnpn switch driving circuit
JPS5272183A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Semiconductor device with protecting device
NL7711083A (nl) * 1977-10-10 1979-04-12 Philips Nv Schakeling voorzien van een hoogspannings- vermogenstransistor.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1557614A (fr) * 1966-04-19 1969-02-21
FR96227E (fr) * 1968-12-31 1972-05-19 Silec Liaisons Elec Dispositif électronique a semi-conducteurs pour commander le passage du courant électrique.

Also Published As

Publication number Publication date
JPS54126454A (en) 1979-10-01
CA1131769A (fr) 1982-09-14
GB2018056B (en) 1982-07-28
DE2911711A1 (de) 1979-10-04
GB2018056A (en) 1979-10-10
US4393337A (en) 1983-07-12

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