FR2381393A1 - Dispositif semi-conducteur notamment pour piles solaires - Google Patents

Dispositif semi-conducteur notamment pour piles solaires

Info

Publication number
FR2381393A1
FR2381393A1 FR7804287A FR7804287A FR2381393A1 FR 2381393 A1 FR2381393 A1 FR 2381393A1 FR 7804287 A FR7804287 A FR 7804287A FR 7804287 A FR7804287 A FR 7804287A FR 2381393 A1 FR2381393 A1 FR 2381393A1
Authority
FR
France
Prior art keywords
semiconductor device
solar batteries
devices
tin oxide
solar cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7804287A
Other languages
English (en)
Other versions
FR2381393B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2381393A1 publication Critical patent/FR2381393A1/fr
Application granted granted Critical
Publication of FR2381393B1 publication Critical patent/FR2381393B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur. On utilise comme piles solaires des dispositifs utilisant une couche transparente d'oxyde d'indium ou d'oxyde d'indium et d'étain, et une couche d'une matière semi-conductrice à intervalle direct. Des exemples de ces dispositifs sont constitués par une pile d'oxyde d'indium et d'étain/p-InP qui manifeste un rendement de conversion d'énergie solaire de 12,5 % et également une lumière colorée en rouge lorsqu'elle est polarisée. L'invention s'applique à la construction des piles solaires.
FR7804287A 1977-02-16 1978-02-15 Dispositif semi-conducteur notamment pour piles solaires Granted FR2381393A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/769,107 US4121238A (en) 1977-02-16 1977-02-16 Metal oxide/indium phosphide devices

Publications (2)

Publication Number Publication Date
FR2381393A1 true FR2381393A1 (fr) 1978-09-15
FR2381393B1 FR2381393B1 (fr) 1982-04-16

Family

ID=25084478

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7804287A Granted FR2381393A1 (fr) 1977-02-16 1978-02-15 Dispositif semi-conducteur notamment pour piles solaires

Country Status (12)

Country Link
US (1) US4121238A (fr)
JP (1) JPS53102688A (fr)
BE (1) BE863929A (fr)
CA (1) CA1090456A (fr)
DE (1) DE2805582A1 (fr)
ES (1) ES467047A1 (fr)
FR (1) FR2381393A1 (fr)
GB (1) GB1547140A (fr)
IL (1) IL54018A (fr)
IT (1) IT7867314A0 (fr)
NL (1) NL7801559A (fr)
SE (1) SE433788B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2376513A1 (fr) * 1976-12-31 1978-07-28 Radiotechnique Compelec Dispositif semiconducteur muni d'un film protecteur
US4166880A (en) * 1978-01-18 1979-09-04 Solamat Incorporated Solar energy device
JPS55108781A (en) * 1979-02-15 1980-08-21 Fuji Xerox Co Ltd Light receiving element
US4291323A (en) * 1980-05-01 1981-09-22 Bell Telephone Laboratories, Incorporated Indium phosphide arsenide based devices
JPS6022381A (ja) * 1983-07-18 1985-02-04 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
US5021365A (en) * 1986-06-16 1991-06-04 International Business Machines Corporation Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
IL84118A (en) * 1987-10-07 1991-03-10 Semiconductor Devices Tadiran Process for ii-vi compound epitaxy
US5105291A (en) * 1989-11-20 1992-04-14 Ricoh Company, Ltd. Liquid crystal display cell with electrodes of substantially amorphous metal oxide having low resistivity
JP2912506B2 (ja) * 1992-10-21 1999-06-28 シャープ株式会社 透明導電膜の形成方法
US6344608B2 (en) * 1998-06-30 2002-02-05 Canon Kabushiki Kaisha Photovoltaic element
SE0400582D0 (sv) * 2004-03-05 2004-03-05 Forskarpatent I Uppsala Ab Method for in-line process control of the CIGS process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
US3560812A (en) * 1968-07-05 1971-02-02 Gen Electric High selectively electromagnetic radiation detecting devices
US3614549A (en) * 1968-10-15 1971-10-19 Ibm A semiconductor recombination radiation device
US4024558A (en) * 1974-03-27 1977-05-17 Innotech Corporation Photovoltaic heterojunction device employing a glassy amorphous material as an active layer
IL46896A (en) * 1974-03-27 1977-07-31 Innotech Corp Semiconductive device
US4016586A (en) * 1974-03-27 1977-04-05 Innotech Corporation Photovoltaic heterojunction device employing a wide bandgap material as an active layer
US3978510A (en) * 1974-07-29 1976-08-31 Bell Telephone Laboratories, Incorporated Heterojunction photovoltaic devices employing i-iii-vi compounds

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV320/76 *
NV320/77 *

Also Published As

Publication number Publication date
US4121238A (en) 1978-10-17
CA1090456A (fr) 1980-11-25
GB1547140A (en) 1979-06-06
DE2805582A1 (de) 1978-08-17
IL54018A0 (en) 1978-04-30
BE863929A (fr) 1978-05-29
SE7801408L (sv) 1978-08-16
JPS53102688A (en) 1978-09-07
IT7867314A0 (it) 1978-02-15
IL54018A (en) 1980-06-30
NL7801559A (nl) 1978-08-18
SE433788B (sv) 1984-06-12
FR2381393B1 (fr) 1982-04-16
ES467047A1 (es) 1978-11-01

Similar Documents

Publication Publication Date Title
FR2381393A1 (fr) Dispositif semi-conducteur notamment pour piles solaires
AU590803B2 (en) Solar cell
FR2380641A1 (fr) Dispositif semi-conducteur a support de verre, notamment pour convertisseur d&#39;energie lumineuse, et son procede de fabrication
JPH084147B2 (ja) 太陽電池
WO2001035501A3 (fr) Brasseur optique multiplexe en longueur d&#39;onde incorporant un commutateur optique a commande optique
FR2423869A1 (fr) Dispositif semiconducteur electroluminescent a recyclage de photons
FR2425152A1 (fr) Piles solaires et structures de capteurs
JPS5688377A (en) Solar battery and manufacture thereof
GB1509144A (en) Avalanche photodiode
FR2439479A1 (fr) Dispositif de commutation semi-conducteur de type p-i-n photoactive
JPS5473587A (en) Thin film solar battery device
JPS544582A (en) Photoelectric transducer
JPS57113292A (en) Semiconductor light sensing device
JPS6233757B2 (fr)
JPS5669879A (en) Semiconductor luminous device with lens
JPS5680178A (en) Gaas solar cell
JPS5721876A (en) Photosensor
JPS55158681A (en) Solar cell both sides of which are illuminated
JPS5522812A (en) Semiconductor photodetector
GB2117174B (en) Multilayer photovoltaic solar cell
JPS56138959A (en) Wavelength division type solar battery
JPS53110393A (en) Solar battery
JPS57138184A (en) Solar cell device
JPS64775A (en) Photoelectric converter
JPS57126173A (en) Solar cell

Legal Events

Date Code Title Description
ST Notification of lapse