FR2376904B1 - - Google Patents
Info
- Publication number
- FR2376904B1 FR2376904B1 FR7700586A FR7700586A FR2376904B1 FR 2376904 B1 FR2376904 B1 FR 2376904B1 FR 7700586 A FR7700586 A FR 7700586A FR 7700586 A FR7700586 A FR 7700586A FR 2376904 B1 FR2376904 B1 FR 2376904B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7700586A FR2376904A1 (fr) | 1977-01-11 | 1977-01-11 | Procede d'attaque d'une couche mince par decomposition d'un gaz dans un plasma |
BE1008620A BE862497A (fr) | 1977-01-11 | 1977-12-30 | Procede d'attaque d'une couche mine par decomposition d'un gaz dans un plasma |
DE19782800180 DE2800180A1 (de) | 1977-01-11 | 1978-01-03 | Duennschicht-aetzverfahren durch plasmazersetzung eines gases |
GB152/78A GB1545461A (en) | 1977-01-11 | 1978-01-04 | Method of attacking a thin film by decomposition of a gas in a plasma |
US05/868,239 US4134817A (en) | 1977-01-11 | 1978-01-10 | Method of attacking a thin film by decomposition of a gas in a plasma |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7700586A FR2376904A1 (fr) | 1977-01-11 | 1977-01-11 | Procede d'attaque d'une couche mince par decomposition d'un gaz dans un plasma |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2376904A1 FR2376904A1 (fr) | 1978-08-04 |
FR2376904B1 true FR2376904B1 (US06420036-20020716-C00037.png) | 1980-02-29 |
Family
ID=9185333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7700586A Granted FR2376904A1 (fr) | 1977-01-11 | 1977-01-11 | Procede d'attaque d'une couche mince par decomposition d'un gaz dans un plasma |
Country Status (5)
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4201579A (en) * | 1978-06-05 | 1980-05-06 | Motorola, Inc. | Method for removing photoresist by hydrogen plasma |
US4222838A (en) * | 1978-06-13 | 1980-09-16 | General Motors Corporation | Method for controlling plasma etching rates |
US4214946A (en) * | 1979-02-21 | 1980-07-29 | International Business Machines Corporation | Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant |
US4253907A (en) * | 1979-03-28 | 1981-03-03 | Western Electric Company, Inc. | Anisotropic plasma etching |
US4307283A (en) * | 1979-09-27 | 1981-12-22 | Eaton Corporation | Plasma etching apparatus II-conical-shaped projection |
DE2940626C2 (de) * | 1979-10-06 | 1984-11-29 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum Plasma-Ätzen in Plasma-Reaktoren |
JPS5687670A (en) * | 1979-12-15 | 1981-07-16 | Anelva Corp | Dry etching apparatus |
DE3016736A1 (de) * | 1980-04-30 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen geaetzter strukturen in siliziumoxidschichten |
US4324611A (en) * | 1980-06-26 | 1982-04-13 | Branson International Plasma Corporation | Process and gas mixture for etching silicon dioxide and silicon nitride |
DE3026911A1 (de) * | 1980-07-16 | 1982-02-04 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zum hochfrequenz-kathodenzerstaeubungs-aetzen von loechern in einem substrat |
JPS5751265A (en) * | 1980-09-10 | 1982-03-26 | Hitachi Ltd | Microwave plasma etching device |
DE3045922A1 (de) * | 1980-12-05 | 1982-07-08 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von strukturen von aus siliziden oder aus silizid-polysilizium bestehenden schichten durch reaktives sputteraetzen |
CA1155798A (en) * | 1981-03-30 | 1983-10-25 | Shmuel Maniv | Reactive deposition method and apparatus |
US4397079A (en) * | 1981-03-30 | 1983-08-09 | International Business Machines Corp. | Process for improving the yield of integrated devices including Schottky barrier diodes |
US4569719A (en) * | 1981-07-17 | 1986-02-11 | Plasma Physics Corporation | Glow discharge method and apparatus and photoreceptor devices made therewith |
US4368099A (en) * | 1982-02-05 | 1983-01-11 | Rca Corporation | Development of germanium selenide photoresist |
DE3331707A1 (de) * | 1983-09-02 | 1985-03-21 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern |
DE3511141A1 (de) * | 1985-03-27 | 1986-10-23 | Siemens AG, 1000 Berlin und 8000 München | Ionenstrahl-materialbearbeitungsanlage mit neutralisationseinrichtung |
US4626312A (en) * | 1985-06-24 | 1986-12-02 | The Perkin-Elmer Corporation | Plasma etching system for minimizing stray electrical discharges |
US4845041A (en) * | 1985-11-20 | 1989-07-04 | Analyte Corporation | Atomic-absorption sputtering chamber and system |
US4680087A (en) * | 1986-01-17 | 1987-07-14 | Allied Corporation | Etching of dielectric layers with electrons in the presence of sulfur hexafluoride |
DE3615519A1 (de) * | 1986-05-07 | 1987-11-12 | Siemens Ag | Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten |
JPH029115A (ja) * | 1988-06-28 | 1990-01-12 | Mitsubishi Electric Corp | 半導体製造装置 |
US4871421A (en) * | 1988-09-15 | 1989-10-03 | Lam Research Corporation | Split-phase driver for plasma etch system |
DE3886754D1 (de) * | 1988-10-19 | 1994-02-10 | Ibm Deutschland | Vorrichtung zum Plasma- oder reaktiven Ionenätzen und Verfahren zum Ätzen schlecht wärmeleitender Substrate. |
US5458724A (en) * | 1989-03-08 | 1995-10-17 | Fsi International, Inc. | Etch chamber with gas dispersing membrane |
DE69024719T2 (de) * | 1989-08-14 | 1996-10-02 | Applied Materials Inc | Gasverteilungssystem und Verfahren zur Benutzung dieses Systems |
US5207836A (en) * | 1989-08-25 | 1993-05-04 | Applied Materials, Inc. | Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus |
US6379466B1 (en) | 1992-01-17 | 2002-04-30 | Applied Materials, Inc. | Temperature controlled gas distribution plate |
US5226967A (en) * | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
JP3024449B2 (ja) * | 1993-07-24 | 2000-03-21 | ヤマハ株式会社 | 縦型熱処理炉及び熱処理方法 |
JPH10223607A (ja) * | 1997-02-03 | 1998-08-21 | Mitsubishi Electric Corp | プラズマ処理装置 |
SG81989A1 (en) * | 1999-05-19 | 2001-07-24 | Tokyo Electron Ltd | Plasma treatment method |
TW502264B (en) * | 2000-08-26 | 2002-09-11 | Samsung Electronics Co Ltd | RF matching unit |
JP5211332B2 (ja) * | 2008-07-01 | 2013-06-12 | 株式会社ユーテック | プラズマcvd装置、dlc膜及び薄膜の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3984301A (en) * | 1973-08-11 | 1976-10-05 | Nippon Electric Varian, Ltd. | Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge |
US3971684A (en) * | 1973-12-03 | 1976-07-27 | Hewlett-Packard Company | Etching thin film circuits and semiconductor chips |
US3951709A (en) * | 1974-02-28 | 1976-04-20 | Lfe Corporation | Process and material for semiconductor photomask fabrication |
US3994793A (en) * | 1975-05-22 | 1976-11-30 | International Business Machines Corporation | Reactive ion etching of aluminum |
US4030967A (en) * | 1976-08-16 | 1977-06-21 | Northern Telecom Limited | Gaseous plasma etching of aluminum and aluminum oxide |
-
1977
- 1977-01-11 FR FR7700586A patent/FR2376904A1/fr active Granted
- 1977-12-30 BE BE1008620A patent/BE862497A/xx unknown
-
1978
- 1978-01-03 DE DE19782800180 patent/DE2800180A1/de not_active Withdrawn
- 1978-01-04 GB GB152/78A patent/GB1545461A/en not_active Expired
- 1978-01-10 US US05/868,239 patent/US4134817A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
BE862497A (fr) | 1978-06-30 |
DE2800180A1 (de) | 1978-07-13 |
US4134817A (en) | 1979-01-16 |
FR2376904A1 (fr) | 1978-08-04 |
GB1545461A (en) | 1979-05-10 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |