FR2374744B1 - - Google Patents

Info

Publication number
FR2374744B1
FR2374744B1 FR7638126A FR7638126A FR2374744B1 FR 2374744 B1 FR2374744 B1 FR 2374744B1 FR 7638126 A FR7638126 A FR 7638126A FR 7638126 A FR7638126 A FR 7638126A FR 2374744 B1 FR2374744 B1 FR 2374744B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7638126A
Other languages
French (fr)
Other versions
FR2374744A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7638126A priority Critical patent/FR2374744A1/fr
Publication of FR2374744A1 publication Critical patent/FR2374744A1/fr
Application granted granted Critical
Publication of FR2374744B1 publication Critical patent/FR2374744B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Recrystallisation Techniques (AREA)
FR7638126A 1976-12-17 1976-12-17 Diode a capacite variable du type " hyperabrupt ", et procede de fabrication d'une telle diode Granted FR2374744A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7638126A FR2374744A1 (fr) 1976-12-17 1976-12-17 Diode a capacite variable du type " hyperabrupt ", et procede de fabrication d'une telle diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7638126A FR2374744A1 (fr) 1976-12-17 1976-12-17 Diode a capacite variable du type " hyperabrupt ", et procede de fabrication d'une telle diode

Publications (2)

Publication Number Publication Date
FR2374744A1 FR2374744A1 (fr) 1978-07-13
FR2374744B1 true FR2374744B1 (ja) 1980-09-12

Family

ID=9181201

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7638126A Granted FR2374744A1 (fr) 1976-12-17 1976-12-17 Diode a capacite variable du type " hyperabrupt ", et procede de fabrication d'une telle diode

Country Status (1)

Country Link
FR (1) FR2374744A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2451634A1 (fr) * 1979-03-16 1980-10-10 Thomson Csf Resistance de charge pour hyperfrequence, procede de fabrication et circuit d'utilisation d'une telle resistance
GB2105106A (en) * 1981-07-17 1983-03-16 Clarion Co Ltd Variable capaciter
FR2592527B1 (fr) * 1985-12-31 1988-02-05 Thomson Csf Diode a capacite variable, a profil hyperabrupt et structure plane, et son procede de realisation
WO1995031010A1 (en) * 1994-05-10 1995-11-16 Valery Moiseevich Ioffe Varicap
RU2119698C1 (ru) * 1995-11-15 1998-09-27 Валерий Моисеевич Иоффе Варикап

Also Published As

Publication number Publication date
FR2374744A1 (fr) 1978-07-13

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Legal Events

Date Code Title Description
ST Notification of lapse