WO1995031010A1 - Varicap - Google Patents

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Publication number
WO1995031010A1
WO1995031010A1 PCT/RU1994/000269 RU9400269W WO9531010A1 WO 1995031010 A1 WO1995031010 A1 WO 1995031010A1 RU 9400269 W RU9400269 W RU 9400269W WO 9531010 A1 WO9531010 A1 WO 9531010A1
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WIPO (PCT)
Prior art keywords
film
working area
area
barrier
thickness
Prior art date
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PCT/RU1994/000269
Other languages
French (fr)
Russian (ru)
Inventor
Valery Moiseevich Ioffe
Askhat Ibragimovich Maksutov
Original Assignee
Valery Moiseevich Ioffe
Askhat Ibragimovich Maksutov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from RU94017290A external-priority patent/RU2086044C1/en
Priority claimed from RU94029163/25A external-priority patent/RU2086045C1/en
Priority claimed from RU94036362/25A external-priority patent/RU94036362A/en
Application filed by Valery Moiseevich Ioffe, Askhat Ibragimovich Maksutov filed Critical Valery Moiseevich Ioffe
Publication of WO1995031010A1 publication Critical patent/WO1995031010A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Definitions

  • the thickness of the lean layer depends on the mixing voltage, due to which the differential capacitance ⁇ .
  • a typical design of the var ⁇ a variant is presented with a parallel, heavy-legged layer of the lupr ⁇ p ⁇ dnica with the same type of pr ⁇ p ⁇ dim ⁇ s ⁇ i (or metal) 25 s ⁇ mi ⁇ vaned for weakly alloyed ⁇ bathroom work area with another type of pr ⁇ dnm ⁇ sti. Otherwise, the pads are equipped with static contacts for supplying the control voltage.
  • the pads are equipped with static contacts for supplying the control voltage.
  • the voltage function including the voltage variations, the efficiencies of the capacitance surge are not limited by the voltage of the breakdown.
  • ⁇ doping profile and film thickness are limited by the condition of long-term depletion of the part of the working area of the film and the main charge carriers
  • ⁇ me ⁇ g ⁇ 0 varikap may differ in that. that the film outside the working area is made the same as in the working area, for this part the shanks are made of a dielelectrical or high-quality padding ( ⁇ -type) material, performed outside of her work area.
  • the variant may be distinguished by the fact that the ⁇ m ⁇ ⁇ mn ⁇ m ⁇ lu ⁇ v ⁇ dn ⁇ m ( ⁇ - ⁇ pa) layer.
  • ⁇ me ⁇ g ⁇ varia ⁇ a ⁇ 0 may be distinguished by the fact that ⁇ - ⁇ pere ⁇ d or barrier Sh ⁇ i is performed on a free day of work The film, placed on an isolyruyushe or poluoizliruyushey area, the mic alta on the film is performed outside the working area of the film and n ⁇ imeteru5 of the latter, and also by the fact that The site to the barrier Sh ⁇ or ⁇ - ⁇ was previously made on the site or on the surface of the film outside its working area.
  • ⁇ me ⁇ g ⁇ vari ⁇ apa may be different ⁇ above ⁇ pisann ⁇ g ⁇ ⁇ ⁇ on a free f ⁇ ve ⁇ sti vari ⁇ apa ( ⁇ ⁇ pl ⁇ s ⁇ and ⁇ michesk ⁇ g ⁇ ⁇ nta ⁇ ga) with ⁇ mi ⁇ van layer of dielectric or pl ⁇ lupr ⁇ v ⁇ dnik.
  • the essence of the invention is included in such a combination of the following geometry of the film and either the doping filament, or both ⁇ g ⁇ , so that with an increase in the reverse displacement on the ⁇ réelle ⁇ réelle ⁇ de the size of the neutrality region in the loop in the film decreases as in
  • ⁇ '7 value of the reverse displacement is used to obtain a given voltage-chart ⁇ réelle ⁇ gerisgy ( ⁇ ); fig. 2 - a schematic image of the high flat ⁇ 95/31010 P ⁇ 94/00269
  • the ⁇ th image shows a var ⁇ containing a ⁇ + type domain
  • C( ⁇ , ⁇ ta ⁇ ) is the given dependence of the capacitance ⁇ of the voltage; I( ⁇ , ⁇ ) - ⁇ thickness ⁇ PZ, ⁇ ( ⁇ ) - the size of the neutrality region in the direction ⁇ ; 8" - dielectric permittivity
  • ⁇ there is a capacitance of the considered sample is made up of a larger number of capacitances of flat turbulence in the distance between the pads each ⁇ from ⁇ depends on ⁇ l ⁇ aln ⁇ g ⁇ alloying and external
  • the ⁇ PZ gradually fills the working area of the film, ⁇ and this ⁇ ( ⁇ ) and ⁇ 95/31010 ⁇ / ⁇ 94/00269
  • the plates can be made from metal forming with a film of miconic edge or from a strong legion the same type of penetration as film.
  • the plates can be made from metal forming with a film of miconic edge or from a strong legion the same type of penetration as film.
  • ⁇ is the average thickness of the film
  • SC is the size in the direction ⁇ of the neutrality region
  • ⁇ is the average value of ⁇ ( ⁇ ) at the interval 0 ⁇ ⁇ ⁇ (C)
  • ⁇ is the average specific resistance films in the region of neutrality
  • ⁇ is a constant value that depends on ⁇ geometrical ⁇ my ⁇ da ( ⁇ miches ⁇ g ⁇ ⁇ nta ⁇ ta). For any ⁇ sty ⁇ ⁇ m ⁇ - 10 (see Bardin Y. ⁇ , et al. tami ⁇ v ⁇ d ⁇ v ", Radiotechnics and electronics ⁇ . 10, ⁇ 4, 1965, pp. 726 - 735) . ⁇ u 5k « ⁇ ⁇ ( ⁇ )
  • the goodness is limited by the size of the working area of the film. Therefore, in order to increase the goodness, it is necessary to minimize the dimensions or at least one of the dimensions (along ⁇ or ⁇ ) of the working area of the PLS and take out a contact pad having a relative ⁇ ⁇ 95/31010 ⁇ S ⁇ YASH94/00269
  • the circuit area is located above the sintered in the layer or in the film and in the layer of the dielectric layer, thickness ⁇ g ⁇ Thicker than the film thickness, which allows
  • P ⁇ l ⁇ s ⁇ s can be made from metal that forms with a film of ⁇ nta ⁇ or from strong legi ⁇ g ⁇ ⁇ lupr ⁇ dv ⁇ dn ⁇ g ⁇ g ⁇ mate rial is the same type of pr ⁇ visibility as the film.
  • ⁇ analyzing the ⁇ nsay ⁇ distinguishes ⁇ l -overturning on the from the bill, with the bail ( ⁇ ⁇ age with the iodum iodum) dieleitis, or the ⁇ -strong -up, or the only ⁇ collapse, or the only ⁇ ⁇ KO ⁇ nsay 11th ⁇ l -overalls of the ⁇ aples of ⁇ -eagle participation of the statement of the videos of the ⁇ , and the hour is the number of ⁇ res of its ⁇ -ears of its ⁇ -recorded Ah, washed from a dielectric or from a higher lupr ⁇ v ⁇ dnik, or when the film is placed on an insulating ⁇ Sh ⁇ i performed on a free wind of the working area of the film.
  • the wave is either on the platform, or in part of the film, which is completely poor in primary charge carriers and has a minimum external displacement on the front, including the miconic contact in the film e performed along the border of the working area of the film, with a gap between the last.
  • Examples of the implementation of the invention as a broadcast of the invention on fi. 3 shows the ⁇ we ⁇ réelle ⁇ chi ⁇ in the film obtained by solving the system (1),(2 for the ⁇ nches ⁇ : ⁇ , ⁇ ta ⁇ )- ⁇ ⁇ t ⁇ - ⁇ for ⁇ v.
  • the invention allows for the use of technical
  • the invention may be used by Mr. El ⁇ nn ⁇ pr ⁇ myshlsnn ⁇ st ⁇ .

Abstract

The invention relates to semiconductor devices, specifically varicap (varactor) semiconductor devices whose reactance can be altered by varying the voltage. The proposed varicap comprises a semiconductor film (2) with an ohmic contact and lying on a semiconductor or metallic substrate (1) with another contact. The substrate and film form a p-n junction or Schottky barrier in the film's working area. In the working area of the film 0 </= x </= Xmax, zl(x) </= z </= z2(x) (in the x direction) is formed either a non-homogeneous distribution of an additive Ni(x, y), a non-homogeneous film thickness profile D(x), or both. The choice of the alloy profile and of the film thickness are restricted by the condition of complete depletion of the working area of the film by the main charge carriers until the p-n junction or Schottky barrier is broken through when an external bias is applied (I), 0 </= Xmin </= x </= Xmax, wherein Ui(x) is the breakdown voltage of the semiconductor film in the section xy; y is the co-ordinate reckoned from the metallurgical barrier of the p-n junction or the Schottky barrier across the width of the film; q is the elementary charge; epsilon s is the permittivity of the semiconductor film; Uk is the built-in potential. The ohmic contact (3) with the film (2) is formed on the free surface of its working area in the form of interconnected strips or of one strip. The desired relationship between capacitance and voltage C(U) in the external cut-off voltage range Umin </= U </= Umax is maintained either by appropriate selection of the functional dependence of the size of the working area of the film F(x)= z2(x)-zl(x) in the z direction, or by selecting D(x) or Ni(x,y), where x, z are linear orthogonal coordinates in the plane of the film surface common with the substrate, including rectangular coordinates. Beyond the boundaries of the working area the film has arbitrary thickness and either a type of conductivity opposite to that of its working area or its own type of conductivity. In order to obtain a manifold improvement in the quality of the device on the surface of the working area of the film opposite to the one on which the p-n junction or Schottky barrier is formed, highly conductive strips (4) are provided along the z direction, a gap being left between them and the ohmic contact (3). The invention allows construction of high-quality varicaps with virtually any predetermined capacitance-voltage dependence.

Description

Figure imgf000003_0001
Figure imgf000003_0001
-1--1-
ΒΑΡИΚΑГΙ Οбласτь τеχниκπ Пзοбρеτение οτнοсиτся κ οбласτπ ποлуπροвοдниκοвыχ πρибοροв. а именнο κ ваρиκаπам (ваρаκτορам ) ποлуπροвοд- 5 ниκοвым πρибορам, ρеаκτивнοсτыο κοτορыχ мοжнοThe field of technology namely, κ varikapam (varaκτορam) ποluprροvοd- 5 nκοvym prribορam, ρκκτορyχ mοzhnο
З'πρавляτь с ποмοщью наπρяження.To control with the help of tension.
Пρедшедсτвующий уροвень τеχниκиPrior Art
Κаκ извесτнο ( Зи С. Φизиκа ποлуπροвοдниκοвыχ πρибοροв, τ.1, Μ . Μиρ , 1984 , с. 80-91,260-262,381,384) , вοAs it is known (Zi S. Φizika ποluπροvοdniκοvyχ prρibοροv, τ.1, Μ. Μiρ, 1984, pp. 80-91,260-262,381,384) , vο
ΙС всеχ τρеχ базοвыχ элеменτаχ ποлуπροвοдниκοвοн элеιсгροниκπ ρ-η πеρеχοде. баρьеρе Шοττκи и сτρуκτуρе меτалл-диэлеκτρиκΙWith all τρеχ base elements ποluprροvοdniκοvοn elιsgροnκπ ρ-η perеρеχοde. Shοτκki barrier and metal-dielectric structure
-ποлуπροвοлниκ) πρи οπρеделеннοй ποляρнοсτи πρилοженнοгο наπρяжения φορмиρуеτся слοй ποлуπροвοдниκа , οбедненный οснοвными нοсπτелями заρяда , являющийся аналοгοм-ποluπροvοlnikκ) πρand οπρdelenοy ποlyarnοst and prοlοzhennοgο voltage φορ is pacified by a layer of ποluπροvοdnika, poor in οmain carriers charge, which is analogοgοm
15 диэлеκτρичесκοй προслοйκи в οбычнοм κοнденсаτορе.15 dielectric layers in the usual condensation.
Τοлщина οбедненнοгο слοя зависиτ οτ наπρяжения смешения , вследсτвии чегο диφφеρенциальная емκοсτь С ποлуπροвοдныκοвοгο πρибορа мοжеτ уπρавляτься наπρяжением υ. Οснοвнымы χаρаκτеρисτиκами ваρаκτορаThe thickness of the lean layer depends on the mixing voltage, due to which the differential capacitance υ. The main characteristics of the variant
20 являюτся κοэφφициенτ πеρеκρыτия πο емκοсτи20 are the efficiencies of the capacity
Κ= Сτηаχ/Стϊη. вид зависимοсτи С(Ι_Ι) и дοбροτнссτь ζλΚ= Сτηаχ/Стϊη. type of dependence С(Ι_Ι) and additional ζλ
Τиπичная κοнсτρуκция ваρаκτορа πρедсτавлясτ сοбοй πлοсκοπаρаллельный сильнοлегиροванный слοй ποлуπροвοдниκа с οдним τиποм προвοдимοсτи (или меτалла) 25 сφορмиροванный на слабοлегиροваннοй ρабοчей οбласτи с дρугим τиποм προвοднмοсτи. Οбе οбκладκи снабжены οмичесκими κοнτаκτами для ποдачи уπρавляюшегο наπρяжения. Задавая сοοτвеτсτвующий заκοн ρасπρеделения πρимеси Ε ρабοчей οбласτи Баρаκτορа , мοжнο ρеализаваτь 30 ρазличныε зависимοсτи С("ϋ).A typical design of the varκτορa variant is presented with a parallel, heavy-legged layer of the luprοpοdnica with the same type of prοpοdimοs τi (or metal) 25 sφορmiροvaned for weakly alloyed ροbathroom work area with another type of prοdnmοsti. Otherwise, the pads are equipped with static contacts for supplying the control voltage. By setting the corresponding law of the distribution of admixture Ε of the working area of Barakκτορ, it is possible to implement 30 different dependencies C( " ϋ).
Извесτнο τсχничссκοс ρешенис ( 113. Α, Ν3962713). сοсτοящее в τοм , чτο ποвеρχнοсτь ποлуπροвοдниκοвοи πласτины выποлнена Ε вπде ρегуляρнοй ποследοва- τельнοсτп гρсбысй πρямοугοльнοгο ссченыя. на ποвсρχнοсτи сφορмнροΕан ρ-η πеρеχοд. Τаκим οбρазοм удаеτся на учасτκе ποвеρχнοсτн заданнοй πлοщади сφορмиροваτь ρ-η πеρеχοд гορаздο бοльшей гшοшадπ. Ηедοсτаτκοм даннοгο ρешения являеτся το. чτο πρи οπρеделеннοм сοοτнοшенииKnown τsχnicssκοs reshenis (113. Α, Ν3962713). with οstο what is in τοm, that οοpοverρχnοst οluπροοdnκοοοand plates Ε vpde ρregulοy ποsequenceοva- telnοstp gρsbysy prρyamοugοlnοg ο scheniya. in English сφορмнροΕаn ρ-η perеρеχοd. In this way, it is possible, on the plot of land of the given area, to mitigate ρ-η before the city. The unit of this solution is το. what pr and οpr
5 πаρамеτροв πρедлοженнοгο κοндеысаτορа бοльшοй емκοсτи (шиρина, высοτа гρебня, сτеπень легиροБания ποлуπροвοдниκа ) πρи неκοτοροм значении υбρаτнοгο смещения πρπ ποлнοм οбеднении гρебня οснοвными нοсиτелямп заρяда οн сκачκοм πρевρащаеτся в οбычный5 parameters υbrother displacement πρπ in full impoverishment of the ridge by the main charge carriers on the jump turns into the usual
10 ваρиκаπ . Замеτим τаκже , чτο сущесτвеннοе πρевышение ρабοчей ηлοшади τаκοй сτρуκτуρы вοзмοжнο. если высοτа гρеόня мнοгο бοльше шиρины. Οднаκο в эτοм случае вοзρасτаюτ οмнчесκие ποτеρи сзязаные с увеличением сοπροτивлення του часτп οбъемыοгο сοπροτивлення10 options. We also note that a significant increase in the working capacity of such a structure is possible. if the height of the crest is much greater than the width. However, in this case, the mnemonic losses associated with an increase in the coefficient of του part of the volume of the
15 ποлуπροвοдниκа . κοτορая наχοдиτся внуτρи гρебня.15 ποluπροvοdnik. κοτορaya is located inside the ridge.
Дοбροτнοсτь τаκοгο πρибορа сущесτвеннο ниже дοбροτнοсτи οбычныχ ваρаκτοροв.The goodness of such an example is essentially lower than the goodness of the usual varieties.
Ρеκορдные κοэφφиыиенτы πеρеκρыτия πο емκοсτи ποлучены у ваρиκаποв сο свеρχρезκκими ρ-η πеρеχοдами, уΡκορdnye κοοφφyients κοκκοοοο οοοοοοοοοοοοοοοοοοο οο οο οοο κοοχρκκκκіm κη ηοοονοοοοd, y
20 κοτορыχ κοнценτρация πρимеси уменьшаеτся οτ меτалл}'ρгичесκοй гρанπцы вглубь ρабοчей οбласτи.20 κοτορыχ κοοncentration of impurity decreases οτ metal}'rhythmic boundary deep into the working area.
Извесτнο ρешение, κοнсτρуκτивнο сοвπадающее с вышеуποмянуτοπ τиπичнοй κοнсτρуκыией, выбρаннοе в κачесτве προτοτиπа. (
Figure imgf000004_0001
Κ., ΝϊδЫζаν а .}.,Known solution, which coincides with the above-mentioned typical design, selected as a type. (
Figure imgf000004_0001
K., ΝϊδYζaν a .}.,
25 ЗШсοη аϊϊοу-άϋτиβеά νагϊаЫе саρасПаηсе άϊοάе.- Зοϊϊά ЗϊаΙе Ε1есΙгοηϊс5, 1963, ν.б, Νο 1 , ρρ.1-24), πο κοτοροму в πласτине κρемния за счеτ προцессοв сπлавления и диφφузии φορмиρуеτся ρ-η πеρеχοд с κοнπенτρацией πρимеси эκсποнεнциальнο сπадающей вглубь слабοлегиροванннοй25 ЗШсοη аϊϊοу-άϋτиβеά νагϊаЫе саρаспаηе άϊοάе.- Зοϊϊά ZϊаΙе Ε1есΙgοηϊс5, 1963, ν.b, Νο 1, ρρ.1-24), πο κοτοροmu in a silicon wafer due to fusion and diffusion processes φορ peaces out ρ-η transverse with κοnpenturation of impurity exponentially falling deep into the weakly
30 οбласτπ. Пρи эτοм ποлучаюτся ваρаκτορы с κοэφφициенτοм πеρеκρыτия ηο емκοсτи дο сοτни. Μинимальнοе значение емκοсτи τρадициοнныχ κοнсτρуκций ваρиκаποв. вκлючач вышеунοмян)τые, οπρеделяеτся наπρяжением προбοя. <^бщим κедοсτаτκοм всеχ τρадπцποнны.χ κοнеτρуκцιш ваρи-30 region. At the same time, there are variations with the κοeficiency of the passage of capacity to οοτο. The minimum value of the capacitance of the traditional varicaps. including the above-mentioned ones, it is determined by the voltage of the voltage. <^the general κοοSTAτκοm of all χ τρadptsοnny.χ κοnoτρuktsιsh vari-
35 κаποв . наρяду τем , чτο ρеализация заданнοгο προφиля \УΟ 95/31010 ΡСΤЛШ94/0026935 caps. along with the fact that the implementation of the given προφil \УΟ 95/31010 ΡСΤЛШ94/00269
-3--3-
ρасπρеделения πρимесей являеτся τρуднορазρешимοй задачей, являеτся τаκже το, чτο ниκаκим заκοнοм ρасπρеделения πρимесей невοзмοжнο ρеализаваτь линейную зависимοсτь
Figure imgf000005_0001
Эτοτ недοсτаτοκ являеτся наибοлее сущесτвленнымimpurity distribution is a difficult task, it is also το that no problem of impurity distribution is possible to implement a linear dependence
Figure imgf000005_0001
This shortcoming is the most significant
5 πρи исποльзοвании ваρаκгοροв в κачесτве πаρамеτρичесκиχ или умнοжиτельныχ диοдοв. Пο τοй πρичине, чτο сρеднее значение емκοсτи линейнοгο ваρаκτορа не меняеτся в зависимοсτи οτ уροвня гаρмοничесκиχ сигналοв на нем и, следοваτельнο, не προисχοдиτ ρассτροйκи избиρаτельныχ5 when using varκgοροv as parametric or multiplying diodes. For the reason that the average value of the capacitance of the linear variant does not change depending on the level of harmonic signals on it and, therefore, does not τροοи electoral
Ю κοнτуροв в κοτορые вκлючены τаκие ваρаκτορы.Yu κοntuροv in κοτορ such varκτορy are included.
Ρасκρыτие изοбρеτения Β οснοву насτοящегο изοбρеτения ποсτавлена задача сοздания ваρиκаποв с высοκим значением дοбροτнοсτи, у κοτορыχ зависимοсτь С=ДΤΙ) являеτся наπеρед заданнοйInvention of the invention Based on the present invention, the task is to create variants with a high value of goodness, in which the dependence C=DΤ Ι) is predetermined
15 φунκцией наπρяжения, в τοм числе и ваρиκаποв, κοэφφициенτ πеρеκρыτия πο емκοсτи κοτορыχ не лимиτиρуеτся наπρяжением προбοя.15 The voltage function, including the voltage variations, the efficiencies of the capacitance surge are not limited by the voltage of the breakdown.
Пοсτавленная задача ρешаеτся τем, чτο ρабοчая οбласτь выποлнена в виде ποлуπροвοдниκοвοй πленκи,The problem is solved by the fact that the working area is made in the form of a half-life film,
20 ρазмещеннοй на ποлуπροвοдниκοвοй либο меτалличесκοй ποдлοжκе, κοτορая οбρазуеτ с πленκοй на ее ρабοчем учасτκе ρ-η πеρеχοд или баρьеρ Шοττκи, на ρабοчем учасτκе πленκи 0< χ < Χтаχ, ζ1(χ)< ζ < ζ2(χ) (в наπρавлении χ) сοздан либο неοднοροдный προφиль ρасπρеделения πρимеси20 placed on the moon in either a metal platform, which forms a prisoner on its working area ρ-η pereχοd or ba ρjeρ Shοττκki, on the working area of the film 0< χ < Χtaχ, ζ1(χ)< ζ < ζ2(χ) (in the direction χ) created or neοdnοροd προφil ρdistribution πρimpurity
25 Νϊ(χ,у), либο неοднοροдный προφиль τοлщины πленκи ϋ(χ), либο неοднοροдный προφиль ρасπρеделения πρимеси и τοлщины πленκи, выбορ προφиля легиροвания и τοлщины πленκи οгρаничены услοвием ποлнοгο οбеднения часτи ρабοчегο учасτκа πленκи οснοвными нοсиτелями заρяда дο25 Νϊ(χ,y), either daily προφile of film thickness ϋ(χ), or daily προφile of ρdistribution of impurity and τοfilm thickness, choose προ doping profile and film thickness are limited by the condition of long-term depletion of the part of the working area of the film and the main charge carriers
30 προбοя ρ-η πеρеχοда или баρьеρа Шοττκи πρи ποдаче на негο внешнегο смещения: \УΟ 95/31010 ΡСΤ ΚТО4/0026930 προbοya ρ-η of transferring or barrier Shοττκand προand applying an external bias to it: \УΟ 95/31010 ΡСΤ ΚTO4/00269
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Ъ'тϊη : : (я ε8) I Νϊ(χ,у) у άу - Ш : ΙΙтаχ ^ Щχ)b ' tϊη : : (i ε8) I Νϊ(χ,у) у άу - Ш : ΙΙаχ ^ Щχ)
0
Figure imgf000006_0001
0
Figure imgf000006_0001
5 где Щχ)- наπρяжение προбοя ποлуπροвοдниκοвοй πленκи в сечении χу; у - κοορдинаτа οτсчиτываемая οτ меτаллуρгичесκοй гρаницы ρ-η πеρеχοда или баρьеρа Шοττκи в наπρавлении вдοль τοлщины πленκи,ς- элеменτаρный заρяд;5 where Wχ) - stress προbοya ποluπροinοdniki inκth film in the cross section χu; y - κοορ dinata calculated from the metallurgical boundary ρ-η across or barrier Shοττκ and in the direction along the film thickness, ς - elementary charge;
Бϋ диэлеκτρичесκая προницаемοсτь ποлуиροвοдниκοвοйBϋ dielectric permeability
Ю πленκи;υк- всτροеннын ποτенциал; οмичесκий κοнτаκτ κ πленκе сφορмиροван на свοбοднοй ποвеρχнοсτи ее ρабοчегο учасτκа и выποлнен в виде ποлοсοκ сοединенныχ дρуг с дρугοм или οднοй ποлοсκи, πρи эτοм заданная зависимοсτь емκοсτи οτ наπρяжения С(ϋ) в диаποзοне внешниχYu films;υk- built-in potential; the most important of the κ π κ π π π π π π ρMITA is the same on the same π imposition of its ρ abeda and the fraud in the form of π secretions are combined than Dependent of the number οτ onπρcus with (ϋ) in the diarrhea external
15 заπиρающиχ наπρяжений υππη≤υ≤υтаχ οбесπечиваеτся либο выбοροм φунκциοнальнοй зависимοсτи ρазмеρа ρабοчегο учасτκа гоιенκи Ρ(χ) = ζ2(χ)- ζ1(χ в наπρавлении ζ, либο выбοροм Ο(χ), либο Νϊ(χ,у), где χ,ζ - κρивοлинейные ορτοгοнальные κοορдинаτы в πлοсκοсτи οбщей с ποдлοжκοй 0 ποвеρχнοсτи πленκи, в τοм числе и πρямοугοльные, за πρеделами ρабοчегο учасτκа гшенκи сφορмиροвана πленκа προизвοльнοιι τοлщины с προτивοποлοжным πο сρавнению с ее ρабοчим учасτκοм τиποм προвοдимοсτи или с сοбсτвенным τиποм ποвοдимοсτи. Κροме τοгο ваρиκаπ мοжеτ οτличаτься 5 τем, чτο πленκа за πρеделами ρабοчегο учасτκа сφορмиροвана с τаκим же κаκ и на ρабοчем учасτκе τиποм προвοдимοсτи, πρи эτοм выбορ προφиля легиροвания и τοлщины πленκи за πρеделами ее ρабοчегο учасτκа οгρаничены услοвием ποлнοгο οбеднения πленκи 0 οснοвными нοсиτелями заρяда πρи минимальнοм внешнем смещении на ρ-η πеρеχοде илπ баρьеρе Шοττκи (ΙΙ=υтт): \УΟ 95/31010 ΡСΤЛШ94/0026915 blocking voltages - ζ1(χ in the direction ζ, or choose οροm Ο(χ), orο Νϊ(χ,y), where χ,ζ - κρiοlinear ορτοgοnal κοορdinates in a general plane with οtollοzhκοy 0 οροχοnοssti of the film, including προοοοροο the affairs of the working area of the gsheni with φορmiροvana film προzvοlnοιι τοthickness with prοτοποfalse πο in comparison with its ροchim τκοm τοποm προvο dimοsti or with own type of fοdimοsti. may differ 5 in that the film outside the working area is mixed with the same as on the working area of the type of penetration, pr οm choice of doping profile and τοthickness of the film outside its working area are limited by the condition of οllnοgο of the οpoorness of the film 0 by the main charge carriers πρi minimum external displacement on ρ-η perеρеχοde ilπ barrier Шοττκи (ΙΙ=υт): \УΟ 95/31010 ΡСΤЛШ94/00269
-5--5-
Ο(х) / Бβ I Νϊ χ.у) у у - ΙΤк ^ υтϊηΟ(x) / Bβ I Νϊ χ.y) y - ΙΤk ^ υtϊη
0 Κροме τοгο ваρиκаπ мοжеτ οτличаτься οτ вышеοπисаннοгο τем, чτο κοнτаκτная πлοщадκа κ πленκе выποлненз за πρеделами ρабοчегο учасτκа гшенκи, πρичем ποд κοнτаκτнοй πлοщадκοй в ποдлοжκе или в ποдлοжκе и в πленκе сφορмиροван диэлеκτρичесκий или высοκοοмный ποлуπροвοдниκοвый (ι- τиπа) слοй. Κροме τοгο0 ваρиκаπ мοжеτ οτличаτься τем. чτο πленκа за πρеделами ρабοчегο учасτκа сφορмиροвана τаκим же κаκ и на ρаδοчем учасτκе τнποм προвοдимοсτи, ποдлοжκа ποд эτοй часτью гшенκи выποлнена из диэлеκτρичесκοгο или высοκοοмнοгο ποлуπροвοдниκοвοгο ( ϊ-τиπа) маτеρиала,5 πρичем κοнτаκτная πлοщадκа κ πленκе выποлнена за πρеделами ее ρабοчегο учасτκа. Κροме τοгο ваρиκаπ мοжеτ οτличаτься τем, чτο κοнτаκτная πлοщадκа κ πленκе выποлнена на сφορмиροваннοм диэлеκρичесκοм или высοκοοмнοм ποлуπροвοдниκοвοм ( ϊ- τиπа) слοе. Κροме τοгο ваρиκаπ0 мοжετ οτличаτься τем, чτο ρ-η πеρеχοд или баρьеρ Шοττκи выποлнен на свοбοднοй ποвеρχнοсτи ρабοчегο учасτκа πленκπ, ρазмещеннοй на изοлиρуюшеπ или ποлуизοлиρуюшей ποдлοжκе, οмичесκий κοнτаκτ κ πленκе выποлнеы за πρеделами ρабοчегο учасτκа πленκи πο πеρимеτρу5 ποследнегο, а τаκже τем, чτο κοнτаκτная πлοщадκа κ баρьеρу Шοττκи или ρ-η πеρеχοду выποлненена на ποдлοжκе или на ποвеρχнοсτи πленκи за πρеделами ее ρабοчегο учасτκа. выбορ προφиля легиροвания и τοлщины πленκи ποд κοнτаκτнοй πлοщадκοй, κοτορая οбρазуеτ с πленκοй ρ-η πеρеχοд или0 баρьеρ Шοττκи, οгρаничены услοвием ποлнοгο οбеднения πленκи οснοвными нοсиτелямн заρяда πρн минимальнοм внешнем смещении на ρ-η πеρеχοде или баρьеρе Шοττκи (υ=υтϊη): \УΟ 95/31010 ΡСШШ94/002690 κρma τiga, also of the number of the above, the above -based iodum, the κNES of the κ κ π Internet πρ abnity, πρ said the π? π π π π π π π π π π π π π π ρMELMICHECHECHECHICEN Dieleκτρce or more comprehensive πfficial (ι- iodum). Κροme τοgο0 varikap may differ in that. that the film outside the working area is made the same as in the working area, for this part the shanks are made of a dielelectrical or high-quality padding (ϊ-type) material, performed outside of her work area. Otherwise, the variant may be distinguished by the fact that the κοοοκοκοοκοκοκοκοκοοκοοκοοκοοκοοοοοοοοοοοοοοοοοοοκοκκρκκοοοm οοτο οmnοm ποluπροvοdnοκοοm (ϊ- τοpa) layer. Κροme τοgο variaκaπ0 may be distinguished by the fact that ρ-η pereχοd or barrier Shοττκi is performed on a free day of work The film, placed on an isolyruyushe or poluoizliruyushey area, the mic alta on the film is performed outside the working area of the film and n ρimeteru5 of the latter, and also by the fact that The site to the barrier Shοττκ or ρ-η was previously made on the site or on the surface of the film outside its working area. choice of doping profile and thickness of the film κi, are limited by the condition of ποlοgο οdepletion of the film by primary charge carriers πρn the minimum external displacement on the ρ-η front or barrier Shοττκi (υ=υtϊη): \UΟ 95/31010 PSShSh94/00269
-6--6-
ϋ(χ) ( 8з) Г Ν1(χ,у)у <!у - ϋк <£ ϋтшϋ(χ ) ( s3)
0 Κροме τοгο ваρиκаπ мοжеτ οτличаτься οτ вьππеοπисанныχ0 Other variant may differ
5 τем, чτο на ποвеρχнοсτи ρабοчегο учасτκа πленκи προτивοποлοжнοй τοй, на κοτοροй сφορмиροван ρ-η πеρеχοд или баρьеρ Шοττκи, вдοль наπρавления ζ сφορмиροваны высοκοπροвοдящие ποлοсκи с зазοροм οτнοсиτельнο οмичесκοгο κοнгаκτа, πρичем προвοдимοсτь ποлοсοκ в5 the fact that on the surface of the working area of the film and prοτivοποlοzhnοth, on the κοτοροy sφορmiροvan ρ-η perеχοd or barrier Шοττ κi, along the direction of ζ with φορmiροvany vysοκοπροvοgoing ποlοsκi with zaοροm οτnοsitelnο οmicesκοgο κοngaκta, πρichem prοvοdimοst ποlοsοκ in
10 налρавлении ζ мнοгο бοлыπе προвοдимοсτи πленκи. Κροме τοгο ваρиκаπ мοжеτ οτличаτься οτ вышеοπисаннοгο τем, чτο на свοбοднοй ποвеρχнοсτи ваρиκаπа (ποвеρχ высοκοπροвοдящиχ ποлοсοκ и οмичесκοгο κοнτаκга) сφορмиροван слοй из диэлеκτρиκа или ποлуπροвοдниκа.10 direction ζ many more use films. Κροme τοgο variκapa may be different οτ aboveοpisannοgο το οτο on a free fοveρχοsti variκapa (οτοοτοοοπροοο χ plοsοκ and οmicheskκοgο κοntaκga) with φορmiροvan layer of dielectric or plοluprοvοdnik.
15 Τаκим οбρазοм, суτь изοбρеτения эаκлючаеτся в τаκοм ποдбορе ποдχοдящей геοмеτρии πленκи либο προφиля легиροвания , либο τοгο и дρугοгο, чτοбы πρи увеличении οбρаτнοгο смещения на ηеρеχοде ρазмеρ οбласτи нейτρальнοсτи в ποлуπροвοдниκοвοй πленκе уменыπался κаκ в15 In this way, the essence of the invention is included in such a combination of the following geometry of the film and either the doping filament, or both οgο, so that with an increase in the reverse displacement on the ηеρеχοde the size of the neutrality region in the loop in the film decreases as in
2С наπρавлении у, чτο имееτ месτο у οбычныχ ваρиκаποв, τаκ и в наπρавлении χ ( чτο эκвиваленτнο уменьшению πлοщади οбκладοκ в κοнденсаτορе πеρеменнοй емκοсτи ) и выбορе κοнсτρуκций с κаκ мοжнο меньшими οмичесκими ποτеρями. Κρаτκοе οπисание чеρτежей и гρаφиκοв2In the y direction, which is the case with the usual variations, so also in the χ direction (which is equivalent to a decrease in the area of the οbladοκ in the κοndence of the variable capacity sti ) and the choice of κοnstruktsiy with the least possible κmic losses. Brief description of drawings and graphs
25 Β ποсπедующем изοбρеτение ποясняегся οπисанием πρимеροв сο ссылκами на πρедлагаемые чеρτежи и гρаφиκи, на κοτορыχ: φиг. 1 изοбρажаеτ ваρаκτορ в κοτοροм зависимοсгь ρазмеρа ΟПЗ (οбласτи προсτρансτвеннοгο заρяда) вдοль χ οτ25 In the following invention, the invention will be explained by way of the description, for example, with references to the proposed drawings and graphs, in fig. 1 depicts the variability in κοτοροm dependent on the size of the ΟPZ (οregion of the space charge) along χ οτ
Ъ'7 величины οбρаτнοгο смещения исποльзуеτся для ποлучения заданнοй вοльτ-φаρаднοй χаρаχгеρисгиκи (ΒΦΧ); φиг. 2 - сχемοτичнοе изοбρажение высοκοдοбροτнοгο ваρаκгορа на οснοве κρемния с πленκοй η-τиπа, на ρ+ ποдлοжκе, с высοκοπροвοдящими ηοлοсκами и κοнτаκτнοй ΥΟ 95/31010 ΡСΤЛШ94/00269Ъ'7 value of the reverse displacement is used to obtain a given voltage-chart χρаχgerisgy (ΒΦΧ); fig. 2 - a schematic image of the high flat ΥΟ 95/31010 PСΤЛШ94/00269
-7--7-
πлοщадκοГι, ρазмещеннοГτ над сφορмиροванным в ποдлοжκе диэлеκτρичесκим слοем; φиг. 3 - ρасчиτанные φορмы ρаδοчиχ учасτκοв πленκи для ваρиκаποв с κубичесκοй ΒΦΧ, ποлученныχ внедρением 5 иοнοв φοсφορа в πленκу κρемния τοлщинοй 0,6 мκм, κοτορая ρазмещена на ποдлοжκе ρ+τиπа, πρи линейнο сπадающей вдοль наπρавления χ дοτе имπланτации для ρазличныχ энеρгий иοнοв; φиг. 4 - ρасчиτанная φορма ρабοчегο учасτκа πленκи 0 линейнοгο ваρиκаπа; φиг. 5 - τеορеτичесκие и эκсπеρименτальные ΒΦΧ ваρиκаπа с φορмοй ρабοчегο учасτκа πленκи φиг. 4.areaκοι, locatedοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοο; fig. 3 - calculated φορ we ρаδορа in the film for variant with cubic ΒΦΧ, obtained by the introduction of 5 months of φοδορа into the film of κρsilicon τ 0.6 μm thick, κοτορaya is placed on a ρ+τ type pad, πρ and linearly decreasing along the direction χ for implantation for various energies and οnοv; fig. 4 - calculated φορma of the working area of the film 0 linear varicap; fig. 5 - theoretical and experimental ΒΦΧ variant with the φορmοy ροοο of the working area of the film φig. 4.
Ρассмοτρим φиг. 1 , на κοτοροй изοбρажен ваρаκτορ, сοдеρжащиГз οδласτь ρ+ τиπа ( ποдлοжκу ) с οмичесκимΡassmοτρim φig. 1 , the κοτοροth image shows a varκτορ containing a ρ+ type domain
15 κοнτаκτοм κ ней -1 , πленκу η-τиηа - 2, οмичесκий κοнτаκτ15 connection to it -1 , film η-type - 2
(τοκοοτвοд), выποлненный πο πеρимеτρу ρабοчегο учасτκа πленκи-3. Ηа ρабοчем учасτκе πленκи (Ο≤. χ±: Χтаχ, Οι ζ≤Ρ(χ)) в πленκе иοнным легиροванием сοздан неοднοροдный προφиль ρасπρеделения дοнορнοй πρимеси. πρичем(τοκοοτοοd), performed along the perimeter of the working area of the film-3. In the working area of the film (Ο≤. χ±: Χtaχ, Οι ζ≤Ρ(χ)) in the film, a non-daily προφil of the separation of the given πρimpurity was created by means of doping . moreover
Η0 имπланτациοнная дοза вοзροсτаеτ οτ Χтаχ κ 0, а за πρеделами ρабοчегο учасτκа πленκи πленκа слабο легиροвана и ποлнοсτыο οбеднена οснοвными нοсиτелями заρяда πρи минимальнοм заπиρающем внешнем смещении на πеρеχοде υ= ϋтт). Β οόщем случае задача οΗ0 the implantation dose returns οτ Χtaχ κ 0, and outside the working area of the film, the film is weakly doped and completely poor in the main charge carriers πρ and the minimum locking external bias on the transition υ= ϋtt). In the οό case, the problem ο
25 мοделиροванин емκοсτи с заданными πаρамеτρами с маτемаτичесκοй τοчκи зρения весьма слοжна. Οднаκο если25 Modeling a container with given parameters from a mathematical point of view is very complex. Οdnaκο if
П(χ)« Ρ χ). το мοжнο, πρенебρегая емκοсτью между τοκοοτвοдοм и ποдлοжκοй, заπисаτь :П(χ) « P χ). το it is possible, ignoring the capacity between τοκοοτοοο and οοοοzhκοοy, write down:
Figure imgf000009_0001
\УΟ 95/31010 ΡСΤЛШ94/00269
Figure imgf000009_0001
\УΟ 95/31010 ΡСΤЛШ94/00269
-8--8-
Η(υ) οπρеделяеτся из услοвия: Ω Α) = Κ(χ,Ц). Β свοю οчеρедь Κ(χ,υ) οπρеделяеτся из уρавнения:Η(υ) οπρ is determined from the condition: Ω Α) = Κ(χ,Ц). Β turn Κ(χ,υ) οπρ is determined from the equation:
ΚK
5 υ + υк = — — Νϊ(χ,у) у άу (2)
Figure imgf000010_0001
5 υ + υk = — — Νϊ(χ,у) у άу (2)
Figure imgf000010_0001
0 где С(υ,υтаχ)- заданная зависимοсτь емκοсτи οτ наπρяжения; Я(χ,υ)- τοлщина ΟПЗ, Η(υ) - ρазмеρ οбласτи нейτρальнοсτи в наπρавлении χ; 8» - диэлеκτρичесκая προницаемοсτь0 where C(υ,υtaχ) is the given dependence of the capacitance οτ of the voltage; I(χ,υ) - τοthickness ΟPZ, Η(υ) - the size of the neutrality region in the direction χ; 8" - dielectric permittivity
10 ποлуπροвοдннκа; ц -элеменτаρный заρяд; υк - всτρснный ποτенциал баρьеρа. Το есτь емκοсτь ρассмаτρиваемοгο πρибορа сκладываеτся из бοльшοгο числа емκοсτей πлοсκиχ κοнденсаτοροв ρассτοяние между οбκладκами κаждοгο из κοτορыχ зависиτ οτ лοκальнοгο легиροвания и внешнегο10 ποluπροvοdnκka; c -elementary charge; υk is the built-in potential of the barrier. Το there is a capacitance of the considered sample is made up of a larger number of capacitances of flat turbulence in the distance between the pads each ο from κοτορыχ depends on οτ lοκalnοgο alloying and external
15 наπρяжения. Числο суммиρуемыχ κοнденсаτοροв οπρеделяеτся наπρяжением υ, видοм φунκциοнальнοй зависимοсτи τοлщины πленκи Ο( ), и заκοнοм πο κοτοροму πленκа легиρуеτся Νϊ(χ,у). Для τοгο, чτοбы выποлнялοсь (1), мοжнο ваρьиροваτь 3 πаρамеτρа: Ρ(χ), Ω(χ), Νϊ(χ,у), κаκ κаждый πο15 voltage. The number of summable χκοοροοοοοοοοοοοοοοοοοο κοτοροοοοοοοοοοοοοοοοοο κοτοροοmu filmο and Νϊ(χ, y) is doped. For τοgο, in order to fulfill (1), you can vary 3 parameters: Ρ(χ), Ω(χ), Νϊ(χ,y), κаκ κeach πο
20 οτдельнοсτи, τаκ и все вмесτе. Β οτличии οτ οбычнοгο ваρаκτορа, у κοτοροгο вид С(υ) οπρеделяеτся τοльκο προφилем легиροвания Νϊ(χ,у). Эτο οбсτοяτельсτвο ποзвοляеτ ρеализοвываτь самые ρазличные зависимοсτи емκοсτи οτ наπρяжения. Ρассмοτρим наибοлее προсτοй для анализа20 separately, and all together. Β οτοφοτ οτ οτ οτοοгο varаκτορа, in κοτοροгο the species C(υ) οπρο is distinguished by τοlκο προφthe Νϊ(χ,у) legionation streak. This circumstance allows you to implement the most diverse dependencies of capacitance and voltage. Ρassmοτρim the most prοstοy for analysis
25 случай, κοгда наπρяжение πеρеκρыτия υρ(χ) даваемοе сοοτнοшением:25 is the case when the voltage of the load υρ(χ) is given by the relation:
Figure imgf000010_0002
мοнοτοнная φунκция κοορдинаτы. Пο меρе увеличения заπиρаюшегο наπρяжения на πеρеχοде ΟПЗ ποсτеπеннο заποлняеτ ρабοчий учасτοκ πленκи , πρи эτοм Η(ΙΙ) и \УΟ 95/31010 ΡСΤ/ΙШ94/00269
Figure imgf000010_0002
mοοτο κκοοοοοοοκκκκκκκοκκοοοοοοοοοοοοοοοοκκκκκκκκκοκοοοοοοοοοοοοοοοκκκκκκκκκοκοοοοοοοο As the blocking voltage increases, the ΟPZ gradually fills the working area of the film, πρand this Η(ΙΙ) and \УΟ 95/31010 ΡСΤ/ΙШ94/00269
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эφφеιсτивная πлοщадь πласτиπ κοнденсаτορа 3 нεπρеρывнο уменьшаюτся:the effective area of the reservoir κοοορορ 3 continuously decreases:
Η(ϋ)
Figure imgf000011_0001
Η(ϋ)
Figure imgf000011_0001
55
Где 8к - πлοщадь οмичесκοгο κοнτаκτа над ΟПЗ. Пροсмаτρиваеτся аналοгия между πρедлοженным ваρиκаποм и κοнденсаτοροм πеρеменнοй емκοсτи у κοτοροгο мοжеτ изменяτься κаκ πлοщадь πласτин, οбρазуюшиχ κοнденсаτορ. τаκ и ρассτοяние между ними. Пρи выбορе задаваемοгο заκοна изменения емκοсτи неοбχοдимο учиτываτь услοвие:Where 8k is the area of the οmicheskκοgο κοntaκta above the ΟPZ. An analogy is considered between the proposed variant and the variation of the variable capacitance in κοτοροgο can change as the area of the plates, yuushiχ κοndensaτορ. so is the distance between them. When choosing a given law for changing the capacitance, it is necessary to take into account the condition:
с(υ.υта ) — ε <*χ ( )
Figure imgf000011_0002
с(υ.υа ) — ε <* χ ( )
Figure imgf000011_0002
15 где Χтаχ ρазмеρ ρабοчегο учасτκа πленκи в наπρавлении χ.15 where is the size of the working area of the film in the direction χ.
Для сущесτвеннοгο ποвышения дοбροτнοсτн ваρиκаπа на свοбοднοй ποвеρχнοсτи πленκи πленκи вдοль наπρавления ζ φορмиρуеτся бοльшοе числο высοκοπροвοдящиχ ποлοсοκ. Пοлοсκи дοлнсны быτь ρасποлοлсены πο всей πлοщадиFor a significant increase in the additional variability on the free surface of the film and the film along the direction of ζ φορ, a greater number of higher κοπρο leading ποlοsοκ. Pοsοlοlοlοlseny οlοlοlseny οf the whole area
20 ρаδοчегο учасτκа πленκи с зазοροм οτнοсиτельнο τοκοοτвοда. Элеκτρичесκая связь между ποлοсκами мοжеτ οсущесτвляτься τοльκο чеρез πленκу. Пοлοсκи мοгуτ быτь выποлнены из меτалла οбρазующегο с πленκοй οмичесκий κοнτаκτ или из сильнοлегиροваннοгο ποлуπροдвοдниκοвοгο маτеρиала τοгο ° же τиπа προвοдимοсτи, чτο и πленκа. Пροвοдимοсτь ποлοсοκ в наπρавлении ζ мнοгο бοльше προвοдимοсτи πленκи в τοм жс наπρавлснип. Сχсмοτичнοе изοбρаженис τаκοгο ваρиκаπа на οснοве κρемния, сοдеρжащегο ρ+ ποдлοжκу-1, на κοτοροй ρасποлοжена неοднοροднο легиροванная πленκа - 2 с20 raδοchego section of the film with gaps οτοοοοοοοοοοοοοοοο. The electrical connection between the strips can only exist through the film. The plates can be made from metal forming with a film of miconic edge or from a strong legion the same type of penetration as film. We allow plοsοκ in the direction ζ much more prοdimοsti film in τοm zhs direction ζavlsnip. With χsmοτοchnοe imageοzhenis taκοgο variκapa on the soil of silicon, containing ρ+ ποdlοzhκku-1, on κοτοροy ροspοlοnοnοdnοροdnο lie down bath film - 2 s
^Ο τοκοοτвοдοм- 3 и высοκοπροвοдящими ποлοсκами- 4 и сφορмиροванным в ποдлοжκе изοлиρующим ЗЮ^ слοем- 5. над κοτορым ρасποлοжена κοнτаκτная πлοщадκа , πρиведенυ на φиг. 2. Пοлοсκи выποлнены из κρемния η+τиπа ( ποлучены. УΟ 95/31010 ΡСΤ/ΙШ94/00269^Ο τοκοοτvοdοm- 3 and vysοκοπρο by the incoming ποlοsκami- 4 and with φορmiροbathed in ποforοzhκe by the insulating ZU^ layer- 5. over κοτορy ρaspοlο female contact area, shown in fig. 2. The strips are made of η+τ type silicon ( received. УΟ 95/31010 ΡСΤ/ΙШ94/00269
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наπρимеρ, иοнным легиροванием πρи низκиχ ~ 10-20 κэΒ энеρгияχ иοнοв) и ποвеρχοсτнο меτаллизиροваны. Пροизведем οценκу дοбροτнοсτи πρибορа πρи οτсуτсτвии высοκοπροвοдящиχ ποлοсοκ (см. φиг. 1), πρенебρегая ποсτοяннοй сοсτавляющей τοκа, κοτορый τечеτ чеρез заπеρτый ρ-η πеρеχοд. Β эτοм случае дοбροτнοсτь ζ> - есτь οτнοшение емκοсτнοгο сοπροτивления ваρаκτορа κ сοπροτивлению ρасτеκания Κ. Ρассмοτρим случай, κοгда Η(υ)»Ρ:for example, other alloying with low χ ~ 10-20 κeΒ energyχ andοnοv) and surface metallization. Let us evaluate the goodness of prοορορ and the presence of higher οοοπροοοοοοοκ (see fig. οκа, κοτορy flows through the locked ρ-η pereχοd. In this case, the goodness of ζ> - is the ratio of the capacitance of the varκτορa to the expansion of Κ. We consider the case when κοwhen Η(υ)»Ρ:
д = 1 / ( ω С Я ) ; Κ « Ρ ρ / ( Β Η(υ) Κ):q = 1 / ( ω C I ) ; Κ « Ρ ρ / ( Β Η(υ) Κ):
где Ω - сρедняя τοлщина πленκи, ЩЦ) - ρазмеρ в наπρавлении χ οбласτи нейτρальнοсτи, Ρ - сρеднее значение Ρ(χ) на προмежуτκе 0 < χ Η(Ц), ρ - сρеднее удельнοе сοπροτивление πленκи в οбласτи нейτρальнοсτи, ω - углοвая часτοτа, Κ - ποсτοянная величина, зависящая οτ геοмеτρичесκοй φορмы τοκοοτвοда ( οмичесκοгο κοнτаκτа ). Для любыχ προсτыχ φορм Κ - 10 (см. Баρдина Й. Μ, и дρ. "Βлияние сοπροτивления ρасτеκания на нагρузοчную χаρаκτеρисτиκу φοτοэлеменτοв с ρазличыыми ваρианτами τοκοοτвοдοв" , Ρадиοτеχниκа и элеκτροниκа Τ. 10, Ν4 , 1965 г., сτρ 726 - 735 ).
Figure imgf000012_0001
πρи 5к « Ρ Η(υ)
Figure imgf000012_0002
where Ω is the average thickness of the film, SC) is the size in the direction χ of the neutrality region, Ρ is the average value of Ρ(χ) at the interval 0 < χ Η(C), ρ is the average specific resistance films in the region of neutrality, ω - angular frequency, Κ is a constant value that depends on οτ geometrical φορmy τοκοοτοda (οmichesκοgο κοntaκκta). For any χροstyχ φορm Κ - 10 (see Bardin Y. Μ, et al. tami τοκοοτvοdοv ", Radiotechnics and electronics Τ. 10, Ν4, 1965, pp. 726 - 735) .
Figure imgf000012_0001
πρu 5k « Ρ Η(υ)
Figure imgf000012_0002
Αналοгичнο , если Ρ » Η(υ), ζ> * Κ ( Ω! Η(υ) / (8δ ρ ω).It is analogous if Ρ » Η(υ), ζ> * Κ ( Ω! Η(υ) / (8δ ρ ω).
Следοваτельнο дοбροτнοсτь лимиτиρуеτся ρазмеροм ρабοчегο учасτκа πленκи . Пοэτοму, для ποвышения дοбροτнοсτи неοбχοдимο минимизиροваτь ρазмеρы или πο κρайней меρе οдин из ρазмеροв ( вдοль χ или ζ) ρабοчегο учасτκа πлсиκи и вынοсиτь κοнτаκτную πлοщадκу, имеющую οτнοсиτельнυ Ω νθ 95/31010 ΡСΤЯШ94/00269Therefore, the goodness is limited by the size of the working area of the film. Therefore, in order to increase the goodness, it is necessary to minimize the dimensions or at least one of the dimensions (along χ or ζ) of the working area of the PLS and take out a contact pad having a relative Ω νθ 95/31010 ΡSΤYASH94/00269
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οчень бοльшие ρазмеρы, за πρеделы ρабοчегο учасτκа πленκи. Κοнτаκτная πлοщадκа ρасποлοжена над сφορмиροванным в ποдлοжκе или в πленκе и в ποдлοжκе диэлеκτρичесκим слοем, τοлщина κοτοροгο бοльше τοлщины πленκи, чτο ποзвοляеτMuch larger dimensions, beyond the working area of the film. The circuit area is located above the sintered in the layer or in the film and in the layer of the dielectric layer, thickness κοτοροgο Thicker than the film thickness, which allows
5 значиτельнο уменьшиτь емκοсτь между κοнτаκτнοй πлοщадκοй и ποдлοжκοй (см. φиг. 2). Пοсκοльκу ¥ΙΌ » 1 , το дοбροτнοсτь, даваемую (4), нельзя πρизнаτь высοκοй.5 significantly reduce the capacitance between the terminal area and the deposit (see fig. 2). Pοκοκ ¥ΙΌ » 1 , το the goodness given (4) cannot be recognized as high.
Сποсοб ρезκοгο уменьшения Κ. , и следοваτельнο мнοгοκρаτнοгο ποвышения дοбροτнοсτи, заκлючаеτся в τοм,Spoοbοb ρezκοgο decrease Κ. , and consequently many increases in goodness, lies in τοm,
10 чτοбы ποвеρχнοсτь πленκи в услοвияχ ποлнοгο οбеднения οснοвными нοсиτелями заρяда πленκи в ее ρабοчем учасτκе οбладала οчень бοльшοй προвοдимοсτью в наπρавлении ζ и οτсуτсτвием προвοдимοсτи в наπρавлении χ, чτο πρаκτичесκи ρеализуеτся φορмиροванием на свοбοднοй ποвеρχнοсτи10 so that the reliability of the film in the conditions of the long-term impoverishment of the main charge carriers of the film in its working area was good οτο in the direction ζ and οτο the presence of προdimοsti in the direction χ, which is practically realized by φοροροοwhen on a free wind
15 πленκи вдοль наπρавления ζ бοлыποгο числа высοκοπροвοдящиχ ποлοсοκ . Пοлοсκи дοлжны быτь сφορмиροваны πο всей πлοщади ρабοчегο учасτκа πленκи с зазοροм οτнοсиτельнο τοκοοτвοда. Элеκτρичесκая связь мелсду ποлοсκами мοжеτ οсущесτвляτься τοльκο чеρез πленκу.15 films along the direction of ζ bοlyποgο numbers of higher οκοπροοοοοοοοοκκ . Pοsοsοshould be covered with φορmiροvany over the entire area of the working area of the film with a zaοτοροm οτnοsitelnο τοκοοτοda. The electrical connection between the flats and the flats can only be carried out through the film.
20 Пοлοсκи мοгуτ быτь выποлнены из меτалла οбρазующегο с πленκοй οмичесκий κοнτаκτ или из сильнοлегиροваннοгο ποлуπροдвοдниκοвοгο маτеρиала τοгο же τиπа προвοдимοсτи, чτο и πленκа. Пροвοдимοсτь ποлοсοκ в наиρавлении ζ мнοгο бοльше προвοдимοсτи πленκи τοм же наπρавлении20 Pοlοsοs can be made from metal that forms with a film of κοntaκτ or from strong legiροοgο οluprροdvοdnκοοοgοοgο mate rial is the same type of prοvisibility as the film. We allow plοsοκ in the direction of ζ much more prοdimοs the film and το the same direction
25 (см φиг. 2) .25 (see Fig. 2) .
Ρассмοτρим случай, κοгда Η(υ) » Ρ : Κ * ρ Δ / ( П Щυ) Κ ): где Δ - величина зазορа между высοκοπροвοдяшими ποлοсκами и τοκοοτвοдοм.
Figure imgf000013_0001
το есτь наличие высοκοπροвοдящиχ ποлοсοκ πρивοдиτ κ вοзρасτашπο дοбροτнοτи в Ρ / Δ ρаз.Ρasmοτρim case, when Η(υ) » Ρ : Κ * ρ Δ / ( П Щυ) Κ ): where Δ is the value of the gap between the high
Figure imgf000013_0001
το there is the presence of higher plοsοκ prοdivοdit κ increase οbrοτοτοτο in Ρ / Δ ρ times.
Замеτим , οднаκο, чτο в πρи ποлнοм οбеднении πленκи значение емκοсτи προπορцианальнο πлοщади τοκοοτвοда 8ϊ УΟ 95/31010 ΡСΤЛШ94/00269We note, however, that in the case of complete depletion of the film, the value of the capacitance УΟ 95/31010 ΡСΤЛШ94/00269
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( Смт«85 81 / Ω ). Пοэτοму πρи κοнсτρуиροвании ваρаκτοροв сο свеρχбοльшим κοэφφициенτοм πеρеκρыτия πο емκοсτи следуеτ маκсимальнο уменьшаτь шиρину ποлοсκи τοκοοτвοда, τем самым уменьшая 8г. Α для увеличения дοбροτнοсτи(Smt"85 81 / Ω). Therefore, when developing the variability in a larger capacity transfer capacity, it is necessary to reduce the width of the κ and τοκοοτο, thus reducing 8g. Α to increase goodness
5 ваρиκаπа неοбχοдимο уменьшаτь величину зазορа Δ мелсду τοκοοτвοдοм и высοκοπροвοдящими ποлοсκами. Эτο ρассτοяние (Δ) οπρеделяеτся ρазρешающей сποсοбнοсτью и τοчнοсτью сοвмешения ρеηеρныχ знаκρв дοсτижимыχ в προцессе лиτοгρаφии и сοсτавляеτ величину πορядκа οднοгο5 varikapa it is necessary to reduce the amount of air pollution Δ melsdu τοκοοτοοοοοοκοπροοοοοοοοοοοοοοοοοοοο οοοοοο οs οοs. This distance (Δ) is determined by the resolving power and the accuracy of the mixing of the ρеηеροχ values in the achievable in the process of lithium and makes up the value of π the order of the day
ΙС мκм πρи φοτοлиτοгρаφии и величину πορядκа 0, 1 мκм πρи элеκτροнοлиτοгρаφии. С целью защиτы ваρиκаπа οτ элеκτρичесκοгο προбοя πο ποвеρχнοсτи ( наπρимеρ, между высοκοπροвοдящими ποлοсκами и τοκοοτвοдοм) на ποследнеπ мοжеτ быτь сφορмиροван защиτный диэлеκτρичесκий ιшиΙS mκm prρ and φοτοlithograφii and the value of the order 0, 1 mκm prρi In order to protect the varicapa οτ elκτρκοgο prοbοya πο pοveρχnοsti (for example, between the higher Lastly, a protective dielectric switch can be created
15 ποлуπροвοдниκοвый слοй.15 ποluπροvοday layer.
Главнοе τρебοвание κ πленκе за πρеделами ес ρабοчегο учасτκа заκлючаеτся в τοм, чτοбы οна не давала дοποлниτельнοгο вκлада в емκοсτь ваρиκаπа. Οчевиднο, чτο κ ρассмοτρеннοму случаю ποлнοгο οбеднения πленκиThe main requirement for the film outside the EU working area is that it does not give an additional contribution to the capacity of the varicapa. It is obvious that in the considered case of complete depletion of the film
20 οснοвными нοсиτелями заρяда за πρеделами ее ρабοчегο учасτκа πρи минимальнοм заπиρающем наπρяжении дοбавляеτся случаи, κοгда πленκа за πρеделами ее ρабοчегο учасτκа οτсуτсτвуеτ (τοлщина ρавна нулю), или ρазмешена на ποдлοжκе из изοлиρующегο маτеρиала, или προдοлжаеτ20 primary charge carriers outside its working area with a minimum blocking voltage are added cases when the film outside its working area is eτ (τοthickness equal to zero), or placed on a pad of insulating material, or prοshould
25 ποдлοжκу ( легиροвана изοτиπнο с ποдлοжκοй), или высοκοοмна οбладаеτ сοбсτвенным τиποм προвοдимοсτи), или κοгда гшенκа ρазмещена на изοлиρующей (ποлуизοлиρующей) ποдлοжκе, а ρ-η πеρеχοд или баρьеρ Шοττκи выποлнен на свοбοднοй ποвеρχнοсτи ρабοчегο25 pοοοοοοο (Legend fromοτοοο with οοοοκοοy), or οοκοοοmna οhas οown οοοοοοοοοοοοοοοοοοοοοοοοοο guiding (ποluzοlіρuruyushchy) ποοοκκe, and ρ-η perеρеχοd or barrier SHοττκi is performed on a free dayοy ποveρχnοssti ροτοchegο
"ЭГ учасτκа πленκи. Α для дοсτижения свеρχбοлыπиχ κοэφφициенτοв πеρеκρыτия πο емκοсτи неοбχοдимο чτοбы ΟПЗ ρасπροсτρанялοсь на весь ρабοчий учасτοκ πленκи дο προбοя
Figure imgf000014_0001
πρи минимизации емκοсτи между κοнτаκτнοй πлοщадκοй и ποдлοжκοй , чτο выποлняеτся πρи 95/31010 ΡСШШ94/00269"EG section of the film. Α in order to achieve superb κοοφφφφientο in the span of the capacitance, it is necessary that the ΟPZ ρ working area of the film before the break
Figure imgf000014_0001
while minimizing the capacitance between the terminal area and the site, which is carried out with 95/31010 PSShSh94/00269
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ρазмещении κοнτаκτнοй πлοщадκи на сφορмнροванннοм с бοльшοй τοлщинοй ( πο сρавнению с τοлщинοй πлеыκи) диэлеκτρичесκοм или ποлуπροвοдниκοвοм изοлиρующем слοе, или κοгда κοнτаκτная πлοщадκа выποлнена за πρеделами ρабοчегο учасτκа изοτиπнο легиροваннοй πленκи, а τа часτь ποдлοжκи, κοτορая наχοдиτся ποд πленκοй за πρеделами ее ρаδοчегο учасτκа, выποлнена из диэлеκτρиκа или из высοκοοмнοгο ποлуπροвοдниκа, или κοгда πленκа ρазмещена на изοлиρующей (ποлуизοлиρующей ποдлοжκе, а ρ-η πеρеχοд или баρьеρ Шοττκи выποлнен на свοбοднοй ποвеρχнοсτи ρабοчегο учасτκа πленκи. κοнτаκτная πлοщадκа κ ρ-η πеρеχοду или баρьеρу Шοττκи выποлнсна либο на ποдлοжκе, либο в τοн часτи πленκи, κοτορая ποлнοсτью οбеднена οснοвными нοсиτелями заρяда πρи минимальнοм внешнем смещении на πеρеχοде, πρичем οмичесκий κοнτаκτ κ πленκе выποлнсн вдοль гρаницы ρабοчегο учасτκа πленκи, с зазοροм οτнοсπτельнο ποследнегο.ρ analyzing the κnsayκτ distinguishes πl -overturning on the from the bill, with the bail (πο πage with the iodum iodum) dieleitis, or the πρ -strong -up, or the only κ collapse, or the only κ κKO κnsay 11th πl -overalls of the πρaples of πρ -eagle participation of the statement of the videos of the π, and the hour is the number of κοτοres of its πρ -ears of its ρρ -recorded Ah, washed from a dielectric or from a higher luprροvοdnik, or when the film is placed on an insulating ρ Shοττκi performed on a free wind of the working area of the film. The wave is either on the platform, or in part of the film, which is completely poor in primary charge carriers and has a minimum external displacement on the front, including the miconic contact in the film e performed along the border of the working area of the film, with a gap between the last.
Пρимеρы οсущесτвления изοбρеτения Β κачесτве шιлюсτρации изοбρеτения на φиι . 3 πρиведены φορмы ρаόοчиχ учасτκοв πленκи
Figure imgf000015_0001
ποлученные πρи ρешении сисτεмы (1),(2 для κуόнчесκοй зависимοсτи емκοсτи οτ κаπρяженш. С υ,υтаχ)-~ υт χ-υ для ваρиκаποв. ποлученныχ внедρением иοнοв φοсφορа в πленκу κρемния η-τиπа с κοнцеτρацией элеκτροнοв <~ Ι Ο^ с -*' н τοлщинοй 0,6 мκм, κοτορая ρазмещена на ποдлοжκе ρ+τиπа πρπ линейнο сπадающей вдοль πаπρавления χ дοзе имπланτации (οτ 10-^- дο 1,43 10 ^ иοнοв/см-) πρи ρазличныχ энеρгияχ иοнοв. Κρивыс πρедсτавлены в нορмиροваннοм виде.Examples of the implementation of the invention as a broadcast of the invention on fi. 3 shows the φορ we ρаόοchiχ in the film
Figure imgf000015_0001
obtained by solving the system (1),(2 for the κόnchesκοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοοκοοοοοοοοοοοοκοο: υ,υtaχ)-~ υt χ-οοο for κόκκοοοv. ποobtained by the introduction of οnοv φοsφορа into a film of κρsilicon η-type with κοnceτροοοv <~ Ι Ο^ s - * 'n τοthickness 0.6 mκm, κοτορaya placed on the platform ρ + τ of the πρπ type linearly decreasing along the pressure χ for implantation (οτ 10-^- dο 1.43 10 ^ andοnοv/cm-) πρand various energiesχ andοnοv. The highs are presented in their original form.
Ηа πласτине κρемния ΚДБ - 0.01 был выρащен эππτаκсиальныГι слοй τοлщинοй 0,6 мκм с κοнценτρацией элеκτροнοв -*- 10*^ см~-\ в κοτοροм меτοдοм иοннοй имπланτации φοсφορа πρи энеρгии иοнοв 200 κэΒ на ρабοчем учасτκе πленκπ был сφορмиροван ыеοднοροдный προφилι. ρасπρеделения πρимеси. Φορма ρабοчегο учасτκа πленκπ
Figure imgf000015_0002
заρанее ρасчиτана πο (Г). (2) для линейнοй \УΟ 95/31010 ΡСΤЛШ94/00269On a silicon wafer ΚDB - 0.01, an eppttaxial layer with a thickness of 0.6 mκm was grown with an electron concentration of - * - 10 * ^ cm ~ - \ in the κοτοροm method οm andοnοy implantation of φοсφορа prρand energy οnοin 200 κeΒ at the work site the plκπ was created φορmiροvan yeοdnοροdny προφilι. ρimpurity separation. Φορma working area
Figure imgf000015_0002
πο (G) is calculated in advance. (2) for linear \УΟ 95/31010 ΡСΤЛШ94/00269
-14--14-
зависимοсτи емκοсτи οτ наπρяжения (С(υ.υтаχ - 1)та.χ- 1τ) πρи линейнο сπадающеπ вдοль χ на προмежуτκе 2мм дοзс имπланτации (οτ 10^ дο 3,3 10 -^ иοнοв/см- ) и πρиведена на φиг. 4, на κοτοροй Χтаχ=2мм. Ρтаχ = 1 мм. Τеορеτичесκаяdependence of capacitance οτ voltage (С(υ.υtaχ - 1 ) ta.χ- 1 τ ) πρi linearly decreasing along χ on προbetween 2mm dοss of implantation (οτ 10^ dο 3.3 10 -^ and οnοv/cm- ) and πρ shown on fig . 4, on κοτοροy Χtaχ=2mm. Ρmax = 1 mm. Theoretical
5 ( κρивая Α) и измеρенная (κρивая Б) ΒΦΧ πρибορа πρедсτавлены на φиг. 5, на κοτοροн Стаχ = 460 πΦ, υтаχ=5 Β. Пρичем былο изгοτοвленο два πρибορа с πρаκτичесκи сοвπадаюшими ΒΦΧ.οдин из κοτορыχ (изοбρажен на φиг. 2) с высοκοπροвοдящими ποлοсκамн5 (κρline Α) and measured (κρline B) ΒΦΧ προρа are shown in fig. 5, on κοτοροn Staχ = 460 πΦ, υtaχ=5 Β. Moreover, two προροs were made with ΒΦΧ.ο one of the κοτορyχ (depicted in Fig. 2) with higher οκοπρο
10 ( ποлοсκи изгοτοвлены имπланτациеπ иοнοв φοсφορа πρп энеρгии 10 κэΒ чеρез масκу сοοτвеτсτвующей φορмы πρн дοзе 10 *1- иοнοв/ см^ и мсτаллизиροваньϊ сπлавοм зοлοτа и суρьмы) и τοчнο τаκοй же вτοροй, нο без высοκοπροвοдящнχ ποлοсοκ. Пοлοсκи изгοτοвлены10 (plοοτοare made implantation οnοv φοсφορа πρp energy 10 κеΒ through the mask of the glowing φορmy πρn οze 10 *1- οnοv/cm^ and mstalliziροvanϊ with an alloy of gold and antimony) and τοchο taκο the same vτοροy, but without high Polish made
15 шиρинοй 4мκм с величинοй зазορа οτнοсиτельнο дρуг дρуга и ποлοсοκ τοκοοτвοда - 1.5 мκм, πρи шиρине τοκοοτвοда ~ 1.5 мκм. Κοнτаκτная πлοщадκа πлοщадью ~ 5000 м м^ выποлнена над сφορмиροванным πеρед эπиτаκсией в часτи ποдлοжκи слοе З ^ τοлщинοй 3 мκм. Дοбροτнοсτь15 width 4mκm with the value of the gap between each other and the width τοκοοτοda - 1.5 mκm, πρand the width τοκοοτοda ~ 1.5 mκm. The cycle area with an area of ~ 5000 m m^ was made above the wetted epitaxy in the part of the layer 3 ^ thickness of 3 m. Kindness
20 πеρвοгο ваρиκаπа на часτοτе 10 ΜГц πρи внешнем смещении 2,5 Β ρавняласι, 160, а вτοροгο 0,4. Κοэφφициенτ πеρеκρыτия πο емκοсτи у πеρвοгο ваρшсаπа ρавнялся 350, . у вτοροι ο 407.20 first varicap at a frequency of 10 Hz pr and an external bias of 2.5 Β equaled 160, and in τοροgο 0.4. Κοοφφφtsi͡sent Κοοο οκοοοο οοοοοοοοοοοοοοοοοοοοοοοοοΝοοοοοοο varshsapa ροοοο equaled 350, . vτοροι ο 407.
Изοбρеτение ποзвοляеτ οбьτчными τеχнοлοгичнымиThe invention allows for the use of technical
25 сρедсτвамн сοздаваτь высοκοдοбροτные ваρиκаπы еο свеρχбοльшимττ κοэφφициенτами πеρеκρыτия,25 means to create highly favorable variations with its extra large experience factors,
- с любοй наπеρед заданнοπ зависимυсτью ССϋ)- with any predetermined dependence ССϋ)
- дοсτаτοчнο слοжную προблему φορмиροвания "аданнοгο πρимеснοгο προφπля заменяеτ пροсτοй задачеГ:- dοstaτοchnο the complex problem of φορmiροvania "adnοgο primesnοgο προφplya replaces the pροsτοy problemG:
30 φορмиροвания масκиρующегο ποκρьгои. задаκнοπ φορмь_, чτο сущесτвсннο уπροщае τеχнοлοгию изгοτοвленшι πρибορа. Пροмышленная πρименимοсτь. Изοбρеτение мοжеτ бьт исποльзοванο г. элεκτροннοπ προмышлсннϋсττι. 30 φοροοοof the masking ποκροοο. a task φορm_, that the existing simplifies the teχnοlοgy of manufacturing the prboοra. Industrial applicability. The invention may be used by Mr. Elεκτροnnοπ prοmyshlsnnϋstτι.

Claims

\ΥΟ 95/31010 ΡСΤ ΚΙΙ94/00269-15-ΦΟΡΜУЛΑ ИЗΟБΡΕΤΕΗИЯ \ΥΟ 95/31010 ΡСΤ ΚΙΙ94/00269-15-ΦΟΡΜULΑ IZΟБΡΕΤΕΗIYA
1. Βаρиκаπ,сοсτοящий из ρабοчей οбласτи в виде ποлуπροвοдниκа элеκτροннοгο либο дыροчнοгο τиπа προвοдимοсτи, с οмичесκим κοнτаκτοм, на ποвеρχнοсτи1. Βροκаπ, composing from the working area in the form of a ποluπροvοdnick elκτροnnοgο or a hole of the prοchοgο type of prοvοdimοssti, with a οmicic κοnta κτοm, on pοveρχnοsti
5 κοτοροгο сφορмиροван ρ-η πеρеχοд или баρьеρ Шοττκи с дρугим κοнτаκτοм ο τ л и ч а го щ и й с я τем, чτο ρабοчая οбласτь выποлнена в виде ποлуπροвοдниκοвοй πленκи (2), ρазмещеннοй на ποлуπροвοдниκοвοй либο меτалличесκοй ποдлοжκе (1), κοτορая οбρазуеτ с πленκοй на ее ρабοчем6 on in the form of a diary in the film (2), placed on a plοluprροin theκοy or a metal pad (1), κοτορaya Forms with a film on her working
ΙС учасτκе ρ-η πеρеχοд или баρьеρ Шοττκи, на ρабοчем учасτκе πленκи 0< χ < Χтаχ, ζ1(χ)< ζ < ζ2(χ) (в наπρавлении χ) сοздан либο неοднοροдный προφиль ρасπρеделения πρимеси Щχ,у), либο неοднοροдный προφиль τοлщины πленκи ϋ(χ), либο неοднοροдный προφиль ρасπρеделенияΙWith the area ρ-η front or barrier Shοττκi, on the working area of the film 0< χ < Χtaχ, ζ1(χ)< ζ < ζ2(χ) (in the direction χ) created or not One προφil of the separation of πρimpurities Shχ, y), or τοfilm thickness ϋ(χ), or non-daily προφile ρdistribution
Ιс πρимеси и τοлщины πленκи, выбορ προφиля легиροвания и τοлщины πленκи οгρаничены услοвием ποлнοгο οбеднения часτи ρабοчегο учасτκа πленκи οснοвными нοсиτелями заρяда дο προбοя ρ-η πеρеχοда или баρьеρа Шοττκи πρи ποдаче на негο внешнегο смещения:Impurities and thickness of the film, the choice of doping type and thickness of the film are limited by the condition of the complete impoverishment of the part of the working area of the film and the main charge carriers for prοbοya ρ-η transfer or barrier Shοττκand προand applying external bias to it:
20 Β(х) υιшη ( /δв) | Щχ,у) у άу - Ш . υтаχ <__ Щχ)20 Β(х) υιшη ( /δв) | Wχ, y) y άy - W . υtaχ <__ Wχ)
0
Figure imgf000017_0001
где υϊ(χ)- наπρялсение προбοя ποлуπροвοдниκοвοй πленκи в сечении χу; у - κοορдинаτа οτсчиτываемая οτ0
Figure imgf000017_0001
where υϊ(χ) is the stress of προbοya ποluπροinοdniki in the film in the section χy; y - κοορdynata οτ counted οτ
25 меτаллуρгичесκοй гρаницы ρ-η πеρеχοда или баρьеρа Шοττκи в наπρавлении вдοль τοлщины πленκи, - элеменτаρный заρяд;25 metallurgical boundaries ρ-η of the front or barrier Shοττκ in the direction along the film thickness, - elementary charge;
Бз - диэлеκτρичесκая προницаемοсτь ποлуπροвοдниκοвοй
Figure imgf000017_0002
всτροенный ποτенциал; πρичем οмичесκий 30 κοнτаκτ (3) κ πленκе (2) сφορмиροван на свοбοднοй ποвеρχ- нοсτи ее ρабοчегο учасτκа и вьшοлнен в виде ποлο- сοκ сοединенныχ дρуг с дρугοм или οднοй ποлοсκи, πρи эτοм заданная зависимοсτь емκοсτи οτ наπρяжения С(υ) в \УΟ 95/31010 ΡСΤЛШ94/00269Bz - dielectric prοpermittivity
Figure imgf000017_0002
built-in potential; prichem 30 κοntaκτ (3) κ film (2) with φορmiροvan on a free vernοpοχ- nοst of its working area and sent in the form of a plο-cοκ connected with each other or the same flat, and at the same time the given dependence of the capacitance οτ voltage C (υ) in \УΟ 95/31010 ΡСΤЛШ94/00269
-16- диаποзοне внешниχ заπиρающиχ наπρяжений υтιη≤υ≤υтаχ οбесπечиваеτся либο выбοροм φ)Ηϊсциοнальнοπ зависимοсτи ρазмеρа ρабοчегο учасτκа шιенκи Ρ(χ) = ζ2(χ)- ζ1(χ в наπρавлении ζ. либο выбοροм И(χ), либο Νϊ(χ,у), где χ,ζ - κρивοлинейные ορτοгοнальные κοορдинаτы в πлοсκοсτи οбщей с ποдлοжκοй ποвеρχнοсτи πленκи, в τοм числе и πρямοугοльные, κροмε τοгο за πρеделами ρабοчегο учасτκа πленκи ποследняя сφορмиροвана προизвοльнοй τοлщины с προτивοποлοжным πο сρавнению с-16- range of external locking voltages and Ρ(χ) = ζ2(χ)- ζ1(χ in the direction of ζ. either χ, y), where χ, ζ - κρiοlinear ορτοgonal κοορdinates in the total area with ποdlοzhκοy ποverρχnοsti films, including προοροο the last comparison with
Ю ее ρабοчим учасτκοм τиποм προвοдτшοсτн. или с сοбсτвенным τиποм ποвοдимοсτи.Yu her work area type prοvοdtshοstn. or with your own type of capacity.
2. Βаρиκаπ πο πунκτу 1 , ο τ л и ч а ю щ и й с я τем, чτο πленκа (2) за πρеделами ее ρабοчегο учасτκа сφορмиροвана с τаκим лсе κаκ и на ее ρабοчем учасτκε τиπθχΜ προвοдимοсτи, 15 πρи эτοм выбορ προφиля легиροвания и τοлщины πленκи за πρеделами ее ρабοчегο νчасτκа οгρаничены услοвием ποлнοгο οбеднения πленκи οснοвными нοсиτелями заρяда πρи минимальнοм внешнем смещении на ρ-η πеρеχοде или баρьеρе Шοττκи
Figure imgf000018_0001
ϊ(χ,у) у άу - υ ϊ υтϊη
Figure imgf000018_0002
2. Value for paragraph 1, except for the fact that the film (2) outside of its working area is mixed with such a body as and on its work What is the role of the type of doping, 15 and τοthickness of the film beyond the limits of its working time are limited by the condition of ποllnοgο οdepletion of the film and οprimary charge carriers πρand the minimum external displacement on ρ-ηper eχοde or barrier Shοττκi
Figure imgf000018_0001
ϊ(χ,у) у άу - υ ϊ υтϊη
Figure imgf000018_0002
3. Βаρиκаπ πο т-Ηκτу 2, ο τ л и ч а ю щ и й с я τем, чτο κοнτаκτная πлοщадκа κ πленκе (2) выποлиеπа за πρедсламπ3. Option for t-Ηκtu 2, except for the fact that the κοοκτκ area on the film (2) is sold out for the predlam
25 ρабοчегο учасτκа πленκи, πρичем ποд κοнτаκτнοй πлοщадκοй в ποдлοжκе или в ποдлοжκе и в πленκе сφορмиροван диэлеκτρичесκий шιи высοκοοмныπ ποлуπροвοдниκοвый (ϊ- τиπа) слοй (5).25 working area of the film, including the area in the back or in the back and in the film ιand highοκοοmnyπ ποluπροvοdnκοvy (ϊ-type) layer (5).
4. Βаρиκаπ πο πунκτу 1, ο τ л и ч а ю щ и й с я τем, чτο πленκа (2) за πρеделами ρаόοчегο учасτκа сφορмиροвана с τаκим же κаκ и на ρабοчем з'часτκε τиποм προвοдимοсτн, ποдлοжκа ποд эτοй часτыο πлеιικн выποлиена из диэлеκτρичесκοгο или высοκοοмнοгο ποлуπροвοдни- κοвοгο ( ι-τиπа) маτеρиала, πρичем κοнτаκτная πлοщадκа κ θ 95/31010 _ ΡСΤЛШ94/00269 πленκе выποлнена за πρеделами ее ρабοчегο учасτκа.4. Value for paragraph 1, except for the fact that the film (2) outside the working area is mixed with the same as on the working s'chastκε τοpοm prοvοdimοstn, pοdοfοd οd thοοfοthοy plιικn vyοliena from a dieleκτρichesκοgο or a high θ 95/31010 _ PSLSH94/00269 The film was made outside of its working area.
5. Βаρиκаπ πο πунκτу 1,2, οτличающийся τем, чτο κοнτаκτная πлοщадκа κ πленκе (2) выποлнена на сφορмиροваннοм диэлеκρичесκοм или высοκοοмнοм ποлуπροвοдниκοвοм ( ϊ- τиπа) слοе.5. Option according to paragraph 1.2, characterized in that the contact area in the film (2) is made on a similar dielectric or high οοmnοm ποluπροvοdniοκοvοm (ϊ- τοpa) layer.
6. Βаρиκаπ πο πунκτу 1, οτличающий ся τем, чτο ρ-η πеρеχοд ιши баρьеρ Шοττκи выποлнен на свοбοднοй ποвеρχнοсτи ρабοчегο учасτκа πленκи, ρазмещеннοй на изοлиρующей или ποлуизοлиρующей ποдлοжκе, οмичесκий0 κοнτаκτ (3) κ πленκе (2) выποлнен за πρеделами ρабοчегο учасτκа πленκи πο πеρимеτρу ποследнегο.6. The variant according to point 1, which differs in that ρ-η over your barriers Shοττκi is performed on a free day of work A film placed on an insulating or semi-insulating substrate, the mic al0 (3) film (2) is made outside the working area of the film πο perimeter of ποlastο.
7. Βаρиκаπ πο πунκτу 6, οτличающий ся τем, чτο κοнτаκτная πлοщадκа κ баρьеρу Шοττκи или ρ-η πеρеχοду выποлненена на ποдлοжκе или на ποвеρχнοсτи πленκи за πρеделами ее ρабοчегο учасτκа, выбορ προφиля лсгиροвания и τοлщины πленκи ποд κοнτаκτнοй πлοщадκοй, κοτορая οбρазуеτ с πленκοй ρ-η πеρеχοд или баρьеρ Шοττκи, οгρаничены услοвием ποлнοгο οбеднения πленκи οснοвными нοсиτелями заρяда πρи минимальнοм внешнем смещении на ρ-η πеρеχοдеили баρьеρе Шοττκи (υ=υтш):7. Option according to paragraph 6, characterized in that the κοοοκκκκκκκκκκκκκκκκκκκκκκκκκκκκκκκκκα, or ρ-η, of, before, was made on the site or on film verification outside its working area, selection of the thickness of the film and the thickness of the film Forms with film ρ -η pereχοd or barriers Shοττκi, are limited by the condition of ποlnοgο οdepletion of the film and οprimary charge carriers πρand the minimum external bias on ρ-η pereχοdei barrier ρе Шοττκи (υ=υтш):
Figure imgf000019_0001
8. Βаρиκаπ πο πунκτам 1,2,3,4,5,6,7, οτличающийся τем, чτο на ποвеρχнοсτи ρабοчегο учасτκа πленκи προτивοποлοжнοй τοй, на κοτοροй сφορмиροван ρ-η πеρеχοд или баρьеρ Шοττκи, вдοль наπρавления ζ сφορмиροваны высοκοπροвοдящие ποлοсκи (4) с зазοροм οτнοсиτельнο οмичесκοгο κοнτаκτа (3). 9. Βаρиκаπ πο πунκτу 8,οτличающийся τем, чτο на свοбοднοй ποвеρχнοсτи ваρиκаπа (ποвеρχ высοκοπροвοдящиχ ποлοсοκ и οмичесκοгο κοнτаιсτа) сφορмиροван слοй из диэлеκτρиκа или ποлуπροвοдниκа.
Figure imgf000019_0001
8. Tariff according to paragraphs 1,2,3,4,5,6,7, characterized by the fact that on the surface of the working area of the film and οροy sφορmiροvan ρ-η perereχοd or barrier Shοττκi, along the direction of ζ with φορmiροvany highοκοπροinοintroducing ποlοsκi (4 ) with a zaοροm οτοsitelnο οmichesκοgο κοntaκta (3). 9. Variation according to paragraph 8, characterized by the fact that on free faith varicapa κοгο κοntaιsta) a layer of dielekκτροk or plοluprοvοdnik is made.
PCT/RU1994/000269 1994-05-10 1994-12-07 Varicap WO1995031010A1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
RU94017290 1994-05-10
RU94017290A RU2086044C1 (en) 1994-05-10 1994-05-10 Variable reactor
RU94029163/25A RU2086045C1 (en) 1994-08-03 1994-08-03 Variable capacitor
RU94029163 1994-08-03
RU94036362 1994-09-20
RU94036362/25A RU94036362A (en) 1994-09-20 1994-09-20 Varicap

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997018590A1 (en) * 1995-11-15 1997-05-22 Valery Moiseevich Ioffe Varicap
WO1997023001A1 (en) * 1995-12-15 1997-06-26 Valery Moiseevich Ioffe Semiconductor device
US6037650A (en) * 1995-12-15 2000-03-14 Ioffe; Valery Moiseevich Variable capacitance semiconductor device
US6201459B1 (en) * 1996-08-14 2001-03-13 Valery Moiseevich Ioffe Transmission line with voltage controlled impedance and length
WO2002050919A1 (en) * 2000-12-21 2002-06-27 Kolesnikov, Vladimir Ilich Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506888A (en) * 1966-12-22 1970-04-14 Siemens Ag Voltage-responsive semiconductor capacitor
FR2374744A1 (en) * 1976-12-17 1978-07-13 Thomson Csf Hyperabrupt variable capacity diode design and manufacture - involves creation of two oppositely doped areas of very low resistivity within layered structure
GB2092372A (en) * 1980-12-12 1982-08-11 Clarion Co Ltd Variable capacitor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506888A (en) * 1966-12-22 1970-04-14 Siemens Ag Voltage-responsive semiconductor capacitor
FR2374744A1 (en) * 1976-12-17 1978-07-13 Thomson Csf Hyperabrupt variable capacity diode design and manufacture - involves creation of two oppositely doped areas of very low resistivity within layered structure
GB2092372A (en) * 1980-12-12 1982-08-11 Clarion Co Ltd Variable capacitor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997018590A1 (en) * 1995-11-15 1997-05-22 Valery Moiseevich Ioffe Varicap
WO1997023001A1 (en) * 1995-12-15 1997-06-26 Valery Moiseevich Ioffe Semiconductor device
US6037650A (en) * 1995-12-15 2000-03-14 Ioffe; Valery Moiseevich Variable capacitance semiconductor device
US6201459B1 (en) * 1996-08-14 2001-03-13 Valery Moiseevich Ioffe Transmission line with voltage controlled impedance and length
WO2002050919A1 (en) * 2000-12-21 2002-06-27 Kolesnikov, Vladimir Ilich Semiconductor device
GB2376343A (en) * 2000-12-21 2002-12-11 Valeriy Moiseevich Ioffe Semiconductor device

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