FR2372904B1 - - Google Patents
Info
- Publication number
- FR2372904B1 FR2372904B1 FR7729874A FR7729874A FR2372904B1 FR 2372904 B1 FR2372904 B1 FR 2372904B1 FR 7729874 A FR7729874 A FR 7729874A FR 7729874 A FR7729874 A FR 7729874A FR 2372904 B1 FR2372904 B1 FR 2372904B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74336276A | 1976-11-19 | 1976-11-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2372904A1 FR2372904A1 (fr) | 1978-06-30 |
FR2372904B1 true FR2372904B1 (de) | 1982-07-23 |
Family
ID=24988491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7729874A Granted FR2372904A1 (fr) | 1976-11-19 | 1977-09-28 | Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application |
Country Status (5)
Country | Link |
---|---|
US (1) | US4113551A (de) |
JP (1) | JPS5364637A (de) |
DE (1) | DE2749636A1 (de) |
FR (1) | FR2372904A1 (de) |
GB (1) | GB1589619A (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4155866A (en) * | 1978-04-24 | 1979-05-22 | International Business Machines Corporation | Method of controlling silicon wafer etching rates-utilizing a diazine catalyzed etchant |
US4187140A (en) * | 1978-10-11 | 1980-02-05 | International Business Machines Corporation | Method for etching silicon and a residue and oxidation resistant etchant therefor |
DE3148037C2 (de) * | 1981-12-04 | 1983-10-27 | Maschinenfabrik Alfred Schmermund Gmbh & Co, 5820 Gevelsberg | Vorrichtung zum intermittierenden Auftragen von Klebstoff |
GB2193976B (en) * | 1986-03-19 | 1990-05-30 | Gen Electric Plc | Process for depositing a polysilicon film on a substrate |
US4964919A (en) * | 1988-12-27 | 1990-10-23 | Nalco Chemical Company | Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound |
US4996627A (en) * | 1989-01-30 | 1991-02-26 | Dresser Industries, Inc. | High sensitivity miniature pressure transducer |
DE4003472C2 (de) * | 1989-09-22 | 1999-08-12 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Siliziumplatten |
US5071510A (en) * | 1989-09-22 | 1991-12-10 | Robert Bosch Gmbh | Process for anisotropic etching of silicon plates |
US5312781A (en) * | 1991-11-12 | 1994-05-17 | At&T Bell Laboratories | Flash EEPROM fabrication process that uses a selective wet chemical etch |
US5259888A (en) * | 1992-02-03 | 1993-11-09 | Sachem, Inc. | Process for cleaning quartz and silicon surfaces |
US5431777A (en) * | 1992-09-17 | 1995-07-11 | International Business Machines Corporation | Methods and compositions for the selective etching of silicon |
US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
US5498293A (en) * | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
US5928969A (en) * | 1996-01-22 | 1999-07-27 | Micron Technology, Inc. | Method for controlled selective polysilicon etching |
JP3266041B2 (ja) * | 1996-05-22 | 2002-03-18 | 株式会社島津製作所 | 部材接合法及びこの方法により製造した光学測定装置 |
US6755989B2 (en) * | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
JP2001508239A (ja) * | 1997-01-09 | 2001-06-19 | アドバンスド ケミカル システムズ インターナショナル,インコーポレイテッド | 水性フッ化アンモニウムおよびアミンを用いた、半導体ウエハ洗浄組成物および方法 |
US6551972B1 (en) | 1997-07-10 | 2003-04-22 | Merck Patent Gesellschaft | Solutions for cleaning silicon semiconductors or silicon oxides |
US6114248A (en) * | 1998-01-15 | 2000-09-05 | International Business Machines Corporation | Process to reduce localized polish stop erosion |
US5981401A (en) * | 1998-03-13 | 1999-11-09 | Micron Technology, Inc. | Method for selective etching of anitreflective coatings |
US6221269B1 (en) | 1999-01-19 | 2001-04-24 | International Business Machines Corporation | Method of etching molybdenum metal from substrates |
US6248704B1 (en) | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
US6372618B2 (en) * | 2000-01-06 | 2002-04-16 | Micron Technology, Inc. | Methods of forming semiconductor structures |
US6703320B1 (en) * | 2002-01-04 | 2004-03-09 | Taiwan Semiconductor Manufacturing Company | Successful and easy method to remove polysilicon film |
EP1520211A2 (de) * | 2002-06-07 | 2005-04-06 | Mallinckrodt Baker, Inc. | Oxydationsmittel und organische lösungsmittel enthaltende zusammensetzungen zum reinigen von mikroelektronischen substraten |
US7354863B2 (en) * | 2004-03-19 | 2008-04-08 | Micron Technology, Inc. | Methods of selectively removing silicon |
EP2897171B1 (de) * | 2007-12-20 | 2019-01-30 | Sveuciliste U Zagrebu Fakultet Elektrotehnike I Racunarstva | Halbleiterbauelement mit lateralen Bipolartransistor und Verfahren zur Herstellung davon |
US8366954B2 (en) | 2009-01-13 | 2013-02-05 | Avantor Performance Materials, Bv | Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level |
KR20110105396A (ko) * | 2009-01-14 | 2011-09-26 | 아반토르 퍼포먼스 머티리얼스 베.파우. | 웨이퍼 표면 저항 및/또는 광전지 전력 밀도 수준을 증가시키기 위한 용액 |
US7994062B2 (en) * | 2009-10-30 | 2011-08-09 | Sachem, Inc. | Selective silicon etch process |
KR101894603B1 (ko) | 2010-06-09 | 2018-09-03 | 바스프 에스이 | 수성 알칼리 에칭 및 세정 조성물 및 실리콘 기판 표면을 처리하는 방법 |
EP2514799A1 (de) | 2011-04-21 | 2012-10-24 | Rohm and Haas Electronic Materials LLC | Verbesserte polykristalline Strukturierungszusammensetzung und Verfahren |
EP2557147B1 (de) | 2011-08-09 | 2015-04-01 | Basf Se | Wässrige basische Lösung und Verfahren zur Behandlung der Oberfläche von Siliziumsubstraten |
EP2782144B1 (de) * | 2013-03-19 | 2019-05-15 | IMEC vzw | Verfahren zur Herstellung ineinandergreifender Ruhekontakt-Photovoltaikzellen mit Heteroübergang |
CN113292999A (zh) * | 2021-04-27 | 2021-08-24 | 昆明理工大学 | 铜催化刻蚀硅片刻蚀液用添加剂、刻蚀体系及刻蚀方法 |
WO2023099002A1 (de) * | 2021-12-02 | 2023-06-08 | Wacker Chemie Ag | Verfahren zur herstellung von silicium enthaltenden materialien |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3361589A (en) * | 1964-10-05 | 1968-01-02 | Du Pont | Process for treating polyimide surface with basic compounds, and polyimide surface having thin layer of polyamide acid |
FR2142126A5 (de) * | 1971-06-14 | 1973-01-26 | Le Pessot Gabriel | |
BE789090A (fr) * | 1971-09-22 | 1973-01-15 | Western Electric Co | Procede et solution d'attaque de semi-conducteurs |
US3791848A (en) * | 1972-05-19 | 1974-02-12 | Western Electric Co | A method of improving the adherence of a metal deposit to a polyimide surface |
GB1417170A (en) * | 1972-12-22 | 1975-12-10 | Mullard Ltd | Methods of manufacturing semiconductor devices |
US3909335A (en) * | 1974-05-22 | 1975-09-30 | Gen Tire & Rubber Co | Pneumatic tire transporter |
US3909325A (en) * | 1974-06-28 | 1975-09-30 | Motorola Inc | Polycrystalline etch |
JPS5351970A (en) * | 1976-10-21 | 1978-05-11 | Toshiba Corp | Manufacture for semiconductor substrate |
-
1977
- 1977-09-28 FR FR7729874A patent/FR2372904A1/fr active Granted
- 1977-10-26 JP JP12770477A patent/JPS5364637A/ja active Granted
- 1977-10-26 GB GB44634/77A patent/GB1589619A/en not_active Expired
- 1977-11-05 DE DE19772749636 patent/DE2749636A1/de not_active Withdrawn
- 1977-12-16 US US05/861,373 patent/US4113551A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2372904A1 (fr) | 1978-06-30 |
DE2749636A1 (de) | 1978-05-24 |
US4113551A (en) | 1978-09-12 |
GB1589619A (en) | 1981-05-13 |
JPS5364637A (en) | 1978-06-09 |
JPS552474B2 (de) | 1980-01-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |