FR2365247A1 - Circuit de commutation de puissance a semi-conducteur avec protection thermique - Google Patents

Circuit de commutation de puissance a semi-conducteur avec protection thermique

Info

Publication number
FR2365247A1
FR2365247A1 FR7728351A FR7728351A FR2365247A1 FR 2365247 A1 FR2365247 A1 FR 2365247A1 FR 7728351 A FR7728351 A FR 7728351A FR 7728351 A FR7728351 A FR 7728351A FR 2365247 A1 FR2365247 A1 FR 2365247A1
Authority
FR
France
Prior art keywords
thyristor
switching circuit
thermal protection
temperature
power switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7728351A
Other languages
English (en)
Other versions
FR2365247B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cutler Hammer World Trade Inc
Original Assignee
Cutler Hammer World Trade Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cutler Hammer World Trade Inc filed Critical Cutler Hammer World Trade Inc
Publication of FR2365247A1 publication Critical patent/FR2365247A1/fr
Application granted granted Critical
Publication of FR2365247B1 publication Critical patent/FR2365247B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H02H5/044—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a semiconductor device to sense the temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Control Of Temperature (AREA)

Abstract

L'invention concerne un circuit de commutation de puissance à semi-conducteur avec protection thermique. Il comporte un thyristor ou un triac de puissance destiné à alimenter une chargé et un thyristor sensible à la température connecté entre l'électrode de commande et la cathode. Le thyristor sensible à la température est couplé thermiquement avec le thyristor de puissance et, quand ce dernier dépasse une température prédéterminée, le thyristor sensible à la température est débloqué intrinsèquement et il dérive le courant électrode de commande en bloquant ainsi le thyristor de puissance. L'invention s'applique notamment à la régulation de température.
FR7728351A 1976-09-20 1977-09-20 Circuit de commutation de puissance a semi-conducteur avec protection thermique Granted FR2365247A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/725,105 US4087848A (en) 1976-09-20 1976-09-20 Thermally self-protected power switching semiconductor device

Publications (2)

Publication Number Publication Date
FR2365247A1 true FR2365247A1 (fr) 1978-04-14
FR2365247B1 FR2365247B1 (fr) 1983-05-06

Family

ID=24913170

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7728351A Granted FR2365247A1 (fr) 1976-09-20 1977-09-20 Circuit de commutation de puissance a semi-conducteur avec protection thermique

Country Status (5)

Country Link
US (1) US4087848A (fr)
JP (1) JPS5338964A (fr)
DE (1) DE2740538A1 (fr)
FR (1) FR2365247A1 (fr)
GB (1) GB1572414A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0525255A1 (fr) * 1990-04-02 1993-02-03 Motorola, Inc. Circuit de protection pour dispositif semi-conducteur
EP0858164A3 (fr) * 1991-07-24 1998-08-26 Motorola, Inc. Circuit de protection pour dispositif semi-conducteur
FR2807581A1 (fr) * 2000-04-07 2001-10-12 Siemens Ag Procede de protection pour une ligne electrique

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4408523A (en) * 1981-08-11 1983-10-11 Dbs, Inc. Electric imprinter with roller platen positional control
US4423679A (en) * 1981-08-20 1984-01-03 Dbs, Inc. Imprinter having a removable cartridge containing a plurality of roller platens
JPS5935064U (ja) * 1982-08-31 1984-03-05 株式会社アジア 電動式インプリンタ−
JPS5962183A (ja) * 1982-10-04 1984-04-09 Ootosutanpu Kenkyusho:Kk 自動転写装置
US4521693A (en) * 1983-02-11 1985-06-04 Johnson Alan L Electro-optical solid-state SPDT relay switch
US4655132A (en) * 1985-09-27 1987-04-07 National Business Systems, Inc. Electrically powdered imprinter
US4901060A (en) * 1988-10-11 1990-02-13 Liu Lester C Increasing temperature warning device
US5231848A (en) * 1991-09-05 1993-08-03 Tecumseh Products Company Refrigerator cold control
DE19743253A1 (de) * 1997-09-30 1999-04-08 Siemens Ag Verfahren zum Schutz von Schaltungskomponenten einer integrierten Schaltung gegen zu hohe Betriebstemperaturen sowie entsprechend ausgelegte Schutzschaltung
US8324309B2 (en) * 2010-04-27 2012-12-04 Kraton Polymers Us Llc High melt flow block copolymers for non-woven adhesives
EP2506435B1 (fr) * 2011-03-31 2016-05-18 WeEn Semiconductors Co., Ltd. Triac protégé contre la surchauffe et procédé de protection
US20250338632A1 (en) * 2024-04-24 2025-10-30 Semiconductor Components Industries, Llc Switching device with passive overcurrent protection

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282193B (de) * 1963-07-18 1968-11-07 Licentia Gmbh Schutzanordnung gegen UEberlastung steuerbarer Halbleiter-Gleichrichter
GB1187270A (en) * 1967-10-17 1970-04-08 Catylators Ltd Improvements relating to Temperature Control in Electrical Power-Supply Units
US3667064A (en) * 1969-05-19 1972-05-30 Massachusetts Inst Technology Power semiconductor device with negative thermal feedback
US3708720A (en) * 1973-01-02 1973-01-02 Franklin Electric Co Inc Semiconductor thermal protection
DE2444687A1 (de) * 1973-09-20 1975-08-07 Mitsubishi Electric Corp Waermeempfindliche elektronische schaltervorrichtung
US3959621A (en) * 1973-09-26 1976-05-25 Mitsubishi Denki Kabushiki Kaisha Thermally sensitive switch device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3564293A (en) * 1968-04-16 1971-02-16 Power Semiconductors Inc Temperature-compensating thyristor control
US3600650A (en) * 1968-12-30 1971-08-17 Texas Instruments Inc Protected semiconductor device having sensor thermally coupled to electrode
US3622849A (en) * 1970-06-23 1971-11-23 Gen Electric Thyristor junction temperature monitor
JPS5045949A (fr) * 1973-08-30 1975-04-24
US4009482A (en) * 1973-09-26 1977-02-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor thermally sensitive switch structure
CA991756A (en) * 1974-04-19 1976-06-22 Richard I. Maran Semi-conductor thermal protection arrangement
US3971056A (en) * 1975-02-18 1976-07-20 Cutler-Hammer, Inc. Semiconductor temperature switches

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282193B (de) * 1963-07-18 1968-11-07 Licentia Gmbh Schutzanordnung gegen UEberlastung steuerbarer Halbleiter-Gleichrichter
GB1187270A (en) * 1967-10-17 1970-04-08 Catylators Ltd Improvements relating to Temperature Control in Electrical Power-Supply Units
US3667064A (en) * 1969-05-19 1972-05-30 Massachusetts Inst Technology Power semiconductor device with negative thermal feedback
US3708720A (en) * 1973-01-02 1973-01-02 Franklin Electric Co Inc Semiconductor thermal protection
DE2444687A1 (de) * 1973-09-20 1975-08-07 Mitsubishi Electric Corp Waermeempfindliche elektronische schaltervorrichtung
US3959621A (en) * 1973-09-26 1976-05-25 Mitsubishi Denki Kabushiki Kaisha Thermally sensitive switch device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0525255A1 (fr) * 1990-04-02 1993-02-03 Motorola, Inc. Circuit de protection pour dispositif semi-conducteur
EP0858164A3 (fr) * 1991-07-24 1998-08-26 Motorola, Inc. Circuit de protection pour dispositif semi-conducteur
FR2807581A1 (fr) * 2000-04-07 2001-10-12 Siemens Ag Procede de protection pour une ligne electrique

Also Published As

Publication number Publication date
JPS5338964A (en) 1978-04-10
GB1572414A (en) 1980-07-30
US4087848A (en) 1978-05-02
FR2365247B1 (fr) 1983-05-06
DE2740538A1 (de) 1978-03-23

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Legal Events

Date Code Title Description
ST Notification of lapse