FR2363859A1 - Circuit de precharge - Google Patents

Circuit de precharge

Info

Publication number
FR2363859A1
FR2363859A1 FR7726475A FR7726475A FR2363859A1 FR 2363859 A1 FR2363859 A1 FR 2363859A1 FR 7726475 A FR7726475 A FR 7726475A FR 7726475 A FR7726475 A FR 7726475A FR 2363859 A1 FR2363859 A1 FR 2363859A1
Authority
FR
France
Prior art keywords
circuit
potential
output terminal
input signal
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7726475A
Other languages
English (en)
Other versions
FR2363859B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2363859A1 publication Critical patent/FR2363859A1/fr
Application granted granted Critical
Publication of FR2363859B1 publication Critical patent/FR2363859B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)

Abstract

L'invention concerne un circuit de précharge. Le circuit comprend des premiers moyens répondant à un signal d'entrée pour que la borne de sortie du circuit procure un premier potentiel qui se trouve dans une gamme de potentiels disponibles, et de seconds moyens de circuits répondant au signal entrée et comprenant des moyens capacitifs couplés à la borne de sortie pour faire que celle-ci passe d'un premier potentiel à un second potentiel qui est à une extrémité de la gamme de potentiels ou à l'extérieur de celle-ci. L'invention s'applique aux mémoires des dispositifs de traitement de données.
FR7726475A 1976-09-01 1977-08-31 Circuit de precharge Granted FR2363859A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/719,445 US4091360A (en) 1976-09-01 1976-09-01 Dynamic precharge circuitry

Publications (2)

Publication Number Publication Date
FR2363859A1 true FR2363859A1 (fr) 1978-03-31
FR2363859B1 FR2363859B1 (fr) 1983-01-14

Family

ID=24890101

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7726475A Granted FR2363859A1 (fr) 1976-09-01 1977-08-31 Circuit de precharge

Country Status (9)

Country Link
US (1) US4091360A (fr)
JP (1) JPS5330238A (fr)
BE (1) BE858150A (fr)
CA (1) CA1115843A (fr)
DE (1) DE2739110A1 (fr)
FR (1) FR2363859A1 (fr)
GB (1) GB1561197A (fr)
IT (1) IT1084863B (fr)
NL (1) NL190033C (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4124900A (en) * 1977-09-29 1978-11-07 Westinghouse Electric Corp. Memory using interleaved rows to permit closer spacing
US4305139A (en) * 1979-12-26 1981-12-08 International Business Machines Corporation State detection for storage cells
US4291393A (en) * 1980-02-11 1981-09-22 Mostek Corporation Active refresh circuit for dynamic MOS circuits
US4599520A (en) * 1984-01-31 1986-07-08 International Business Machines Corporation Boosted phase driver
US5389835A (en) * 1991-04-12 1995-02-14 Hewlett-Packard Company Vector logic method and dynamic mousetrap logic gate for a self-timed monotonic logic progression
US5208490A (en) * 1991-04-12 1993-05-04 Hewlett-Packard Company Functionally complete family of self-timed dynamic logic circuits
US5159210A (en) * 1991-09-27 1992-10-27 Cyrix Corporation Line precharging circuits and methods
US5289025A (en) * 1991-10-24 1994-02-22 At&T Bell Laboratories Integrated circuit having a boosted node
US5905404A (en) * 1997-03-04 1999-05-18 Lucent Technologies Inc. Bootstrap clock generator

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631267A (en) * 1970-06-18 1971-12-28 North American Rockwell Bootstrap driver with feedback control circuit
US3720925A (en) * 1970-10-19 1973-03-13 Rca Corp Memory system using variable threshold transistors
US3816725A (en) * 1972-04-28 1974-06-11 Gen Electric Multiple level associative logic circuits
US3806738A (en) * 1972-12-29 1974-04-23 Ibm Field effect transistor push-pull driver
US3914620A (en) * 1973-12-26 1975-10-21 Motorola Inc Decode circuitry for bipolar random access memory

Also Published As

Publication number Publication date
JPS5330238A (en) 1978-03-22
US4091360A (en) 1978-05-23
BE858150A (fr) 1977-12-16
NL190033C (nl) 1993-10-01
NL7709597A (nl) 1978-03-03
IT1084863B (it) 1985-05-28
CA1115843A (fr) 1982-01-05
NL190033B (nl) 1993-05-03
GB1561197A (en) 1980-02-13
JPH0115958B2 (fr) 1989-03-22
DE2739110C2 (fr) 1988-01-28
FR2363859B1 (fr) 1983-01-14
DE2739110A1 (de) 1978-03-02

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