FR2363197B1 - - Google Patents
Info
- Publication number
- FR2363197B1 FR2363197B1 FR7720045A FR7720045A FR2363197B1 FR 2363197 B1 FR2363197 B1 FR 2363197B1 FR 7720045 A FR7720045 A FR 7720045A FR 7720045 A FR7720045 A FR 7720045A FR 2363197 B1 FR2363197 B1 FR 2363197B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71705276A | 1976-08-23 | 1976-08-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2363197A1 FR2363197A1 (fr) | 1978-03-24 |
| FR2363197B1 true FR2363197B1 (US08197722-20120612-C00042.png) | 1979-05-11 |
Family
ID=24880516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7720045A Granted FR2363197A1 (fr) | 1976-08-23 | 1977-06-21 | Structure de photo-diode amelioree donnant une reponse en couleur bleue renforcee |
Country Status (6)
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4219830A (en) * | 1978-06-19 | 1980-08-26 | Gibbons James F | Semiconductor solar cell |
| JPS5582472A (en) * | 1978-12-13 | 1980-06-21 | Ibm | Silicone solar energy converter |
| JPS5798961A (en) * | 1980-12-11 | 1982-06-19 | Sanyo Electric Co Ltd | Photodiode for detecting index light signal in beam index type color television receiver |
| GB8417303D0 (en) * | 1984-07-06 | 1984-08-08 | Secr Defence | Infra-red detector |
| EP0296371B1 (de) * | 1987-06-22 | 1992-12-23 | Landis & Gyr Business Support AG | Photodetektor für Ultraviolett und Verfahren zur Herstellung |
| US4968634A (en) * | 1988-05-20 | 1990-11-06 | Siemens Aktiengesellschaft | Fabrication process for photodiodes responsive to blue light |
| DE69321822T2 (de) * | 1993-05-19 | 1999-04-01 | Hewlett Packard Gmbh | Photodiodenstruktur |
| JP3516552B2 (ja) * | 1996-04-30 | 2004-04-05 | シャープ株式会社 | 受光素子の製造方法 |
| US6287886B1 (en) * | 1999-08-23 | 2001-09-11 | United Microelectronics Corp. | Method of forming a CMOS image sensor |
| JP2003197949A (ja) * | 2001-12-26 | 2003-07-11 | Sharp Corp | 受光素子および回路内蔵型受光装置および光ディスク装置 |
| JP2004087979A (ja) * | 2002-08-28 | 2004-03-18 | Sharp Corp | 受光素子およびその製造方法並びに回路内蔵型受光素子 |
| DE102005007358B4 (de) * | 2005-02-17 | 2008-05-08 | Austriamicrosystems Ag | Lichtempfindliches Bauelement |
| DE102005025937B4 (de) * | 2005-02-18 | 2009-11-26 | Austriamicrosystems Ag | Lichtempfindliches Bauelement mit erhöhter Blauempfindlichkeit, Verfahren zur Herstellung und Betriebsverfahren |
| JP2007317767A (ja) * | 2006-05-24 | 2007-12-06 | Matsushita Electric Ind Co Ltd | 光半導体装置およびその製造方法 |
| JP2018026536A (ja) * | 2016-08-09 | 2018-02-15 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3081370A (en) * | 1961-07-17 | 1963-03-12 | Raytheon Co | Solar cells |
| US3514846A (en) * | 1967-11-15 | 1970-06-02 | Bell Telephone Labor Inc | Method of fabricating a planar avalanche photodiode |
| US3601668A (en) * | 1969-11-07 | 1971-08-24 | Fairchild Camera Instr Co | Surface depletion layer photodevice |
| US3978509A (en) * | 1972-06-02 | 1976-08-31 | U.S. Philips Corporation | Photosensitive semiconductor device |
| JPS4917189A (US08197722-20120612-C00042.png) * | 1972-06-02 | 1974-02-15 | ||
| US4001864A (en) * | 1976-01-30 | 1977-01-04 | Gibbons James F | Semiconductor p-n junction solar cell and method of manufacture |
-
1977
- 1977-06-21 FR FR7720045A patent/FR2363197A1/fr active Granted
- 1977-07-06 DE DE19772730477 patent/DE2730477A1/de active Pending
- 1977-07-07 JP JP8049877A patent/JPS5326593A/ja active Pending
- 1977-07-18 CA CA282,968A patent/CA1090457A/en not_active Expired
- 1977-07-26 IT IT26101/77A patent/IT1118044B/it active
- 1977-11-25 US US05/854,877 patent/US4107722A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4107722A (en) | 1978-08-15 |
| JPS5326593A (en) | 1978-03-11 |
| FR2363197A1 (fr) | 1978-03-24 |
| DE2730477A1 (de) | 1978-03-02 |
| CA1090457A (en) | 1980-11-25 |
| IT1118044B (it) | 1986-02-24 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |