FR2362489B1 - - Google Patents
Info
- Publication number
- FR2362489B1 FR2362489B1 FR7725054A FR7725054A FR2362489B1 FR 2362489 B1 FR2362489 B1 FR 2362489B1 FR 7725054 A FR7725054 A FR 7725054A FR 7725054 A FR7725054 A FR 7725054A FR 2362489 B1 FR2362489 B1 FR 2362489B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/01—Manufacture or treatment
- H10D44/041—Manufacture or treatment having insulated gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H10P76/40—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9996176A JPS5325373A (en) | 1976-08-20 | 1976-08-20 | Production of charge transfer device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2362489A1 FR2362489A1 (fr) | 1978-03-17 |
| FR2362489B1 true FR2362489B1 (en:Method) | 1983-11-18 |
Family
ID=14261265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7725054A Granted FR2362489A1 (fr) | 1976-08-20 | 1977-08-16 | Procede de fabrication d'un dispositif a transfert de charges et dispositif obtenu |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4133099A (en:Method) |
| JP (1) | JPS5325373A (en:Method) |
| CA (1) | CA1097429A (en:Method) |
| DE (1) | DE2737527A1 (en:Method) |
| FR (1) | FR2362489A1 (en:Method) |
| GB (1) | GB1576144A (en:Method) |
| NL (1) | NL7709116A (en:Method) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5217771A (en) * | 1975-07-31 | 1977-02-09 | Sony Corp | Charge transfer device |
| US4242692A (en) * | 1978-06-02 | 1980-12-30 | Sony Corporation | Charge transfer device which has a pair of straight portions joined by a direction changing portion |
| US4987466A (en) * | 1988-06-07 | 1991-01-22 | Kabushiki Kaisha Toshiba | Solid state image sensor |
| US5292682A (en) * | 1993-07-06 | 1994-03-08 | Eastman Kodak Company | Method of making two-phase charge coupled device |
| JP2008277787A (ja) * | 2007-03-30 | 2008-11-13 | Nec Electronics Corp | 電荷転送装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3853634A (en) * | 1973-05-21 | 1974-12-10 | Fairchild Camera Instr Co | Self-aligned implanted barrier two-phase charge coupled devices |
| DE2342923C2 (de) * | 1973-08-24 | 1975-10-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer Zweiphasen-Ladungsverschlebeanordnung und nach diesem Verfahren hergestellte Zweiphasen-Ladungs Verschiebeanordnung |
| US3936860A (en) * | 1973-12-11 | 1976-02-03 | Hill Bryan H | Fabrication of a semiconductor device |
| JPS51114079A (en) * | 1975-03-31 | 1976-10-07 | Fujitsu Ltd | Construction of semiconductor memory device |
| US4057895A (en) * | 1976-09-20 | 1977-11-15 | General Electric Company | Method of forming sloped members of N-type polycrystalline silicon |
-
1976
- 1976-08-20 JP JP9996176A patent/JPS5325373A/ja active Pending
-
1977
- 1977-08-02 US US05/821,183 patent/US4133099A/en not_active Expired - Lifetime
- 1977-08-10 GB GB33558/77A patent/GB1576144A/en not_active Expired
- 1977-08-16 FR FR7725054A patent/FR2362489A1/fr active Granted
- 1977-08-17 NL NL7709116A patent/NL7709116A/xx not_active Application Discontinuation
- 1977-08-17 CA CA284,877A patent/CA1097429A/en not_active Expired
- 1977-08-19 DE DE19772737527 patent/DE2737527A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US4133099A (en) | 1979-01-09 |
| DE2737527A1 (de) | 1978-02-23 |
| NL7709116A (nl) | 1978-02-22 |
| FR2362489A1 (fr) | 1978-03-17 |
| JPS5325373A (en) | 1978-03-09 |
| CA1097429A (en) | 1981-03-10 |
| GB1576144A (en) | 1980-10-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |