FR2360177A1 - Photosensitive solid-state electronic element with dielectric layer - has anode-cathode flow modified by photon induced field - Google Patents

Photosensitive solid-state electronic element with dielectric layer - has anode-cathode flow modified by photon induced field

Info

Publication number
FR2360177A1
FR2360177A1 FR7622743A FR7622743A FR2360177A1 FR 2360177 A1 FR2360177 A1 FR 2360177A1 FR 7622743 A FR7622743 A FR 7622743A FR 7622743 A FR7622743 A FR 7622743A FR 2360177 A1 FR2360177 A1 FR 2360177A1
Authority
FR
France
Prior art keywords
dielectric layer
layer
photosensitive material
photosensitive
state electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7622743A
Other languages
French (fr)
Other versions
FR2360177B3 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Edinburgh
Original Assignee
University of Edinburgh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Edinburgh filed Critical University of Edinburgh
Priority to FR7622743A priority Critical patent/FR2360177A1/en
Publication of FR2360177A1 publication Critical patent/FR2360177A1/en
Application granted granted Critical
Publication of FR2360177B3 publication Critical patent/FR2360177B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1133—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a conductor-insulator-semiconductor diode or a CCD device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

A photosensitive solid state electronic device has its anode cathode current modified by photon-induced alteration of the electrical condition of a dielectric layer or layers, in which the modulating field is developed. The device comprises a first and a second electrode in or on the semiconductor body, through which a channelled stream can flow in a zone of the body neighbouring on one of its surfaces. There is a dielectric layer on at least part of the surface, and on this dielectrical layer photosensitive material and an auxiliary electrode neighbouring on the photosensitive material. The photosensitive material is selected so as to cause charge injection in the dielectrical layer on illumination, and the preadjustment electrically of the device so as to alter the electrical condition of the dielectric layer and to influence the channelled flow on the semiconductor body. The photosensitive material is chosen so as to excite a potential on the auxiliary electrode which serves to inject carriers into the dielectric layer; this potential arising from the photo-voltaic effect. The charge injecting material is chosen from among a wide range of substances including phthalocyanine, pinacyanol, cryptocyanine, crystal violet, methylene blue, etc. etc. If forms a layer on the dielectric layer between 0.025 and 2 micrometres thick and comprises a photosensitive substance embodied in an inert matrix of synthetic or polymer material. Is applicable to field effect transistors and field effect diodes, giving considerably improved working. Instead of a photoconductive layer, a coating of a charge injecting photosensitive material is applied on or in a dielectric layer. Improved memory systems using optical modulation can store data at greater density, and the device can be used for example in optical pattern recognition systems using optical cables.
FR7622743A 1976-07-26 1976-07-26 Photosensitive solid-state electronic element with dielectric layer - has anode-cathode flow modified by photon induced field Granted FR2360177A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7622743A FR2360177A1 (en) 1976-07-26 1976-07-26 Photosensitive solid-state electronic element with dielectric layer - has anode-cathode flow modified by photon induced field

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7622743A FR2360177A1 (en) 1976-07-26 1976-07-26 Photosensitive solid-state electronic element with dielectric layer - has anode-cathode flow modified by photon induced field

Publications (2)

Publication Number Publication Date
FR2360177A1 true FR2360177A1 (en) 1978-02-24
FR2360177B3 FR2360177B3 (en) 1979-04-13

Family

ID=9176138

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7622743A Granted FR2360177A1 (en) 1976-07-26 1976-07-26 Photosensitive solid-state electronic element with dielectric layer - has anode-cathode flow modified by photon induced field

Country Status (1)

Country Link
FR (1) FR2360177A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999054936A1 (en) * 1998-04-16 1999-10-28 Cambridge Display Technology Ltd. Polymer devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999054936A1 (en) * 1998-04-16 1999-10-28 Cambridge Display Technology Ltd. Polymer devices
US6603139B1 (en) 1998-04-16 2003-08-05 Cambridge Display Technology Limited Polymer devices

Also Published As

Publication number Publication date
FR2360177B3 (en) 1979-04-13

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Legal Events

Date Code Title Description
ST Notification of lapse