FR2352443B1 - - Google Patents
Info
- Publication number
- FR2352443B1 FR2352443B1 FR7715549A FR7715549A FR2352443B1 FR 2352443 B1 FR2352443 B1 FR 2352443B1 FR 7715549 A FR7715549 A FR 7715549A FR 7715549 A FR7715549 A FR 7715549A FR 2352443 B1 FR2352443 B1 FR 2352443B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
- H03K3/0231—Astable circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electronic Switches (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2120876 | 1976-05-21 | ||
GB21165/76A GB1575906A (en) | 1976-05-21 | 1976-05-21 | Multivibrator circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2352443A1 FR2352443A1 (fr) | 1977-12-16 |
FR2352443B1 true FR2352443B1 (da) | 1982-04-23 |
Family
ID=26255187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7715549A Granted FR2352443A1 (fr) | 1976-05-21 | 1977-05-20 | Multivibrateur monostable |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2722660C3 (da) |
FR (1) | FR2352443A1 (da) |
IT (1) | IT1082079B (da) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3050639A (en) * | 1958-10-30 | 1962-08-21 | Ibm | Single shot multivibrator with pulse width control |
-
1977
- 1977-05-18 DE DE19772722660 patent/DE2722660C3/de not_active Expired
- 1977-05-19 IT IT2377377A patent/IT1082079B/it active
- 1977-05-20 FR FR7715549A patent/FR2352443A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2352443A1 (fr) | 1977-12-16 |
IT1082079B (it) | 1985-05-21 |
DE2722660A1 (de) | 1977-11-24 |
DE2722660C3 (de) | 1979-08-30 |
DE2722660B2 (de) | 1978-12-14 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |