FR2352404A1 - Transistor a heterojonction - Google Patents

Transistor a heterojonction

Info

Publication number
FR2352404A1
FR2352404A1 FR7615223A FR7615223A FR2352404A1 FR 2352404 A1 FR2352404 A1 FR 2352404A1 FR 7615223 A FR7615223 A FR 7615223A FR 7615223 A FR7615223 A FR 7615223A FR 2352404 A1 FR2352404 A1 FR 2352404A1
Authority
FR
France
Prior art keywords
heterojunction transistor
heterojunction
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7615223A
Other languages
English (en)
French (fr)
Other versions
FR2352404B1 (cg-RX-API-DMAC10.html
Inventor
Jacques Benoit
Yves Louis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR7615223A priority Critical patent/FR2352404A1/fr
Priority to GB20179/77A priority patent/GB1524339A/en
Priority to DE19772721744 priority patent/DE2721744A1/de
Publication of FR2352404A1 publication Critical patent/FR2352404A1/fr
Application granted granted Critical
Publication of FR2352404B1 publication Critical patent/FR2352404B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H10W74/137—
FR7615223A 1976-05-20 1976-05-20 Transistor a heterojonction Granted FR2352404A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7615223A FR2352404A1 (fr) 1976-05-20 1976-05-20 Transistor a heterojonction
GB20179/77A GB1524339A (en) 1976-05-20 1977-05-13 Heterojunction transistor
DE19772721744 DE2721744A1 (de) 1976-05-20 1977-05-13 Heterojonctions-transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7615223A FR2352404A1 (fr) 1976-05-20 1976-05-20 Transistor a heterojonction

Publications (2)

Publication Number Publication Date
FR2352404A1 true FR2352404A1 (fr) 1977-12-16
FR2352404B1 FR2352404B1 (cg-RX-API-DMAC10.html) 1978-11-03

Family

ID=9173412

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615223A Granted FR2352404A1 (fr) 1976-05-20 1976-05-20 Transistor a heterojonction

Country Status (3)

Country Link
DE (1) DE2721744A1 (cg-RX-API-DMAC10.html)
FR (1) FR2352404A1 (cg-RX-API-DMAC10.html)
GB (1) GB1524339A (cg-RX-API-DMAC10.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2477777A1 (fr) * 1980-03-10 1981-09-11 Nippon Telegraph & Telephone Transistor bipolaire de puissance
FR2490014A1 (fr) * 1980-09-11 1982-03-12 Scavennec Andre Phototransistor a heterojonction emetteur-base a couche d'emetteur localement de type inverse
EP0178004A1 (en) * 1984-10-02 1986-04-16 IMEC Inter Universitair Micro-Electronica Centrum A bipolar hetero-junction transistor and method of producing the same
EP0501279A1 (en) * 1991-02-28 1992-09-02 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
EP0525762A3 (en) * 1991-07-31 1994-06-29 Texas Instruments Inc Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2222304A (en) * 1987-07-01 1990-02-28 Plessey Co Plc Gallium arsenide device
US5455440A (en) * 1992-12-09 1995-10-03 Texas Instruments Incorporated Method to reduce emitter-base leakage current in bipolar transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897273A (en) * 1972-11-06 1975-07-29 Hughes Aircraft Co Process for forming electrically isolating high resistivity regions in GaAs

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2477777A1 (fr) * 1980-03-10 1981-09-11 Nippon Telegraph & Telephone Transistor bipolaire de puissance
FR2490014A1 (fr) * 1980-09-11 1982-03-12 Scavennec Andre Phototransistor a heterojonction emetteur-base a couche d'emetteur localement de type inverse
EP0178004A1 (en) * 1984-10-02 1986-04-16 IMEC Inter Universitair Micro-Electronica Centrum A bipolar hetero-junction transistor and method of producing the same
US5108936A (en) * 1984-10-02 1992-04-28 Interuniveritair Micro Elektronica Centrum Method of producing a bipolar transistor having an amorphous emitter formed by plasma cvd
EP0501279A1 (en) * 1991-02-28 1992-09-02 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
US5528060A (en) * 1991-02-28 1996-06-18 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise, and high-power applications
EP0525762A3 (en) * 1991-07-31 1994-06-29 Texas Instruments Inc Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
US5446294A (en) * 1991-07-31 1995-08-29 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
US5648278A (en) * 1991-07-31 1997-07-15 Texas Instruments Incorporated Method for fabricating microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications

Also Published As

Publication number Publication date
GB1524339A (en) 1978-09-13
DE2721744A1 (de) 1977-12-08
FR2352404B1 (cg-RX-API-DMAC10.html) 1978-11-03

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Legal Events

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CL Concession to grant licences
ST Notification of lapse