FR2349957B1 - - Google Patents
Info
- Publication number
- FR2349957B1 FR2349957B1 FR7706018A FR7706018A FR2349957B1 FR 2349957 B1 FR2349957 B1 FR 2349957B1 FR 7706018 A FR7706018 A FR 7706018A FR 7706018 A FR7706018 A FR 7706018A FR 2349957 B1 FR2349957 B1 FR 2349957B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W20/01—
-
- H10W20/058—
-
- H10W20/063—
-
- H10W20/42—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/681,367 US4029562A (en) | 1976-04-29 | 1976-04-29 | Forming feedthrough connections for multi-level interconnections metallurgy systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2349957A1 FR2349957A1 (fr) | 1977-11-25 |
| FR2349957B1 true FR2349957B1 (cg-RX-API-DMAC10.html) | 1980-02-01 |
Family
ID=24734983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7706018A Granted FR2349957A1 (fr) | 1976-04-29 | 1977-02-24 | Procede de formation de conducteurs de traversee dans des systemes metalliques d'interconnexion a niveau multiple |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4029562A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS52132679A (cg-RX-API-DMAC10.html) |
| CA (1) | CA1079683A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2709933C2 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2349957A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4178674A (en) * | 1978-03-27 | 1979-12-18 | Intel Corporation | Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor |
| CA1120611A (en) * | 1978-12-29 | 1982-03-23 | Hormazdyar M. Dalal | Forming interconnections for multilevel interconnection metallurgy systems |
| JPS5621332A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Manufacture of semiconductor device |
| WO1981002222A1 (en) * | 1980-01-21 | 1981-08-06 | Mostek Corp | Composit gate interconnect structure |
| US4396458A (en) * | 1981-12-21 | 1983-08-02 | International Business Machines Corporation | Method for forming planar metal/insulator structures |
| US4703392A (en) * | 1982-07-06 | 1987-10-27 | General Electric Company | Microstrip line and method for fabrication |
| US4600663A (en) * | 1982-07-06 | 1986-07-15 | General Electric Company | Microstrip line |
| GB8316476D0 (en) * | 1983-06-16 | 1983-07-20 | Plessey Co Plc | Producing layered structure |
| US4541893A (en) * | 1984-05-15 | 1985-09-17 | Advanced Micro Devices, Inc. | Process for fabricating pedestal interconnections between conductive layers in an integrated circuit |
| JPS61242044A (ja) * | 1985-04-19 | 1986-10-28 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| US4784967A (en) * | 1986-12-19 | 1988-11-15 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for fabricating a field-effect transistor with a self-aligned gate |
| US4771017A (en) * | 1987-06-23 | 1988-09-13 | Spire Corporation | Patterning process |
| DE3742669A1 (de) * | 1987-12-16 | 1989-06-29 | Siemens Ag | Integrierte schaltung und verfahren zur herstellung |
| DE68927931T2 (de) * | 1989-07-26 | 1997-09-18 | Ibm | Verfahren zur Herstellung einer Packungsstruktur für einen integrierten Schaltungschip |
| US5244833A (en) * | 1989-07-26 | 1993-09-14 | International Business Machines Corporation | Method for manufacturing an integrated circuit chip bump electrode using a polymer layer and a photoresist layer |
| US5434451A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Tungsten liner process for simultaneous formation of integral contact studs and interconnect lines |
| US6331481B1 (en) | 1999-01-04 | 2001-12-18 | International Business Machines Corporation | Damascene etchback for low ε dielectric |
| DE10222609B4 (de) * | 2002-04-15 | 2008-07-10 | Schott Ag | Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat |
| US8349727B2 (en) * | 2010-04-08 | 2013-01-08 | Liang Guo | Integrated method for high-density interconnection of electronic components through stretchable interconnects |
| DE102013104953B4 (de) | 2013-05-14 | 2023-03-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3661761A (en) * | 1969-06-02 | 1972-05-09 | Ibm | Rf sputtering apparatus for promoting resputtering of film during deposition |
| JPS4830888A (cg-RX-API-DMAC10.html) * | 1971-08-25 | 1973-04-23 | ||
| US3844831A (en) * | 1972-10-27 | 1974-10-29 | Ibm | Forming a compact multilevel interconnection metallurgy system for semi-conductor devices |
| US3804738A (en) * | 1973-06-29 | 1974-04-16 | Ibm | Partial planarization of electrically insulative films by resputtering |
| US3873361A (en) * | 1973-11-29 | 1975-03-25 | Ibm | Method of depositing thin film utilizing a lift-off mask |
-
1976
- 1976-04-29 US US05/681,367 patent/US4029562A/en not_active Expired - Lifetime
-
1977
- 1977-02-24 FR FR7706018A patent/FR2349957A1/fr active Granted
- 1977-03-08 DE DE2709933A patent/DE2709933C2/de not_active Expired
- 1977-03-23 JP JP3120177A patent/JPS52132679A/ja active Pending
- 1977-03-30 CA CA275,384A patent/CA1079683A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA1079683A (en) | 1980-06-17 |
| DE2709933A1 (de) | 1977-11-17 |
| FR2349957A1 (fr) | 1977-11-25 |
| DE2709933C2 (de) | 1983-08-04 |
| US4029562A (en) | 1977-06-14 |
| JPS52132679A (en) | 1977-11-07 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |