FR2340616A1 - Procede et appareil d'irradiation d'une surface - Google Patents

Procede et appareil d'irradiation d'une surface

Info

Publication number
FR2340616A1
FR2340616A1 FR7702869A FR7702869A FR2340616A1 FR 2340616 A1 FR2340616 A1 FR 2340616A1 FR 7702869 A FR7702869 A FR 7702869A FR 7702869 A FR7702869 A FR 7702869A FR 2340616 A1 FR2340616 A1 FR 2340616A1
Authority
FR
France
Prior art keywords
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7702869A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2340616A1 publication Critical patent/FR2340616A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
FR7702869A 1976-02-05 1977-02-02 Procede et appareil d'irradiation d'une surface Withdrawn FR2340616A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65542776A 1976-02-05 1976-02-05

Publications (1)

Publication Number Publication Date
FR2340616A1 true FR2340616A1 (fr) 1977-09-02

Family

ID=24628844

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7702869A Withdrawn FR2340616A1 (fr) 1976-02-05 1977-02-02 Procede et appareil d'irradiation d'une surface

Country Status (5)

Country Link
JP (1) JPS52103967A (enrdf_load_stackoverflow)
CA (1) CA1149086A (enrdf_load_stackoverflow)
DE (1) DE2704441A1 (enrdf_load_stackoverflow)
FR (1) FR2340616A1 (enrdf_load_stackoverflow)
GB (1) GB1557924A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2382091A1 (fr) * 1977-02-23 1978-09-22 Ibm Procede et dispositif de formation d'un faisceau electronique de taille variable

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251871A (en) * 1975-10-23 1977-04-26 Rikagaku Kenkyusho Projecting method for charge particle beams
NL177578C (nl) * 1976-05-14 1985-10-16 Thomson Csf Inrichting voor het beschrijven van een voorwerp met een deeltjesbundel.
JPS5316578A (en) * 1976-07-30 1978-02-15 Toshiba Corp Electron beam exposure apparatus
CA1100237A (en) * 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system
GB1598219A (en) * 1977-08-10 1981-09-16 Ibm Electron beam system
JPS5442980A (en) * 1977-09-10 1979-04-05 Cho Lsi Gijutsu Kenkyu Kumiai Electron beam unit
JPS5463681A (en) * 1977-10-29 1979-05-22 Nippon Aviotronics Kk Electron beam exposure device
JPS5610926A (en) * 1979-07-06 1981-02-03 Hitachi Ltd Electron beam drawing device
JPS5744684Y2 (enrdf_load_stackoverflow) * 1981-01-22 1982-10-02
US4445041A (en) * 1981-06-02 1984-04-24 Hewlett-Packard Company Electron beam blanker

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5283177A (en) * 1975-12-31 1977-07-11 Fujitsu Ltd Electron beam exposure device
JPS5320391A (en) * 1976-08-09 1978-02-24 Becton Dickinson Co Blood inspection apparatus
JPS5829490A (ja) * 1981-08-18 1983-02-21 松下電器産業株式会社 脱水機
DE3134348A1 (de) * 1981-08-31 1983-03-10 Hoechst Ag, 6000 Frankfurt Verfahren zur reinigung und rueckgewinnung der bei der carbonylierung von methylacetat und/oder dimethylether anfallenden, verunreinigten katalysatorloesung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2382091A1 (fr) * 1977-02-23 1978-09-22 Ibm Procede et dispositif de formation d'un faisceau electronique de taille variable

Also Published As

Publication number Publication date
GB1557924A (en) 1979-12-19
CA1149086A (en) 1983-06-28
DE2704441A1 (de) 1977-08-11
JPS5426875B2 (enrdf_load_stackoverflow) 1979-09-06
JPS52103967A (en) 1977-08-31

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Legal Events

Date Code Title Description
ST Notification of lapse