FR2339954B1 - - Google Patents
Info
- Publication number
- FR2339954B1 FR2339954B1 FR7702483A FR7702483A FR2339954B1 FR 2339954 B1 FR2339954 B1 FR 2339954B1 FR 7702483 A FR7702483 A FR 7702483A FR 7702483 A FR7702483 A FR 7702483A FR 2339954 B1 FR2339954 B1 FR 2339954B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/103—Mask, dual function, e.g. diffusion and oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/105—Masks, metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/141—Self-alignment coat gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/911—Differential oxidation and etching
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP987176A JPS5293278A (en) | 1976-01-30 | 1976-01-30 | Manufacture for mos type semiconductor intergrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2339954A1 FR2339954A1 (fr) | 1977-08-26 |
| FR2339954B1 true FR2339954B1 (online.php) | 1982-01-29 |
Family
ID=11732193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7702483A Granted FR2339954A1 (fr) | 1976-01-30 | 1977-01-28 | Procede de fabrication de dispositifs mos |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4113533A (online.php) |
| JP (1) | JPS5293278A (online.php) |
| CA (1) | CA1067210A (online.php) |
| DE (1) | DE2702922A1 (online.php) |
| FR (1) | FR2339954A1 (online.php) |
| GB (1) | GB1553533A (online.php) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4179311A (en) * | 1977-01-17 | 1979-12-18 | Mostek Corporation | Method of stabilizing semiconductor device by converting doped poly-Si to polyoxides |
| JPS5492175A (en) * | 1977-12-29 | 1979-07-21 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4219925A (en) * | 1978-09-01 | 1980-09-02 | Teletype Corporation | Method of manufacturing a device in a silicon wafer |
| US4240196A (en) * | 1978-12-29 | 1980-12-23 | Bell Telephone Laboratories, Incorporated | Fabrication of two-level polysilicon devices |
| US4343078A (en) * | 1979-03-05 | 1982-08-10 | Nippon Electric Co., Ltd. | IGFET Forming method |
| DE2923995C2 (de) * | 1979-06-13 | 1985-11-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von integrierten MOS-Schaltungen mit MOS-Transistoren und MNOS-Speichertransistoren in Silizium-Gate-Technologie |
| US5202574A (en) * | 1980-05-02 | 1993-04-13 | Texas Instruments Incorporated | Semiconductor having improved interlevel conductor insulation |
| NL187328C (nl) * | 1980-12-23 | 1991-08-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
| AT387474B (de) * | 1980-12-23 | 1989-01-25 | Philips Nv | Verfahren zur herstellung einer halbleitervorrichtung |
| NL8402856A (nl) * | 1984-09-18 | 1986-04-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| JPS62177909A (ja) * | 1986-01-31 | 1987-08-04 | Hitachi Ltd | 半導体装置の製造方法 |
| EP0250611B1 (de) * | 1986-06-21 | 1990-12-19 | Deutsche ITT Industries GmbH | Verfahren zum Entfernen einer strukturierten Maskierungsschicht |
| IT1215558B (it) * | 1987-06-11 | 1990-02-14 | Sgs Microelettronica Spa | Procedimento di programmazione per memorie rom e tecnolgia mos con ossido di gate e giunzioni sottili. |
| US5002369A (en) * | 1988-01-11 | 1991-03-26 | Canon Kabushiki Kaisha | Nonlinear optical element having electrodes on two side surfaces of nonlinear medium through insulating layers |
| US5879997A (en) * | 1991-05-30 | 1999-03-09 | Lucent Technologies Inc. | Method for forming self aligned polysilicon contact |
| US6780718B2 (en) | 1993-11-30 | 2004-08-24 | Stmicroelectronics, Inc. | Transistor structure and method for making same |
| US5798291A (en) * | 1995-03-20 | 1998-08-25 | Lg Semicon Co., Ltd. | Method of making a semiconductor device with recessed source and drain |
| US5920779A (en) * | 1997-05-21 | 1999-07-06 | United Microelectronics Corp. | Differential gate oxide thickness by nitrogen implantation for mixed mode and embedded VLSI circuits |
| US6153454A (en) * | 1997-07-09 | 2000-11-28 | Advanced Micro Devices, Inc. | Convex device with selectively doped channel |
| KR100561970B1 (ko) * | 2003-09-25 | 2006-03-22 | 동부아남반도체 주식회사 | 반도체 소자의 제조방법 |
| US11282931B2 (en) * | 2019-07-31 | 2022-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory device and manufacturing method thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3615873A (en) * | 1969-06-03 | 1971-10-26 | Sprague Electric Co | Method of stabilizing mos devices |
| NL7113561A (online.php) * | 1971-10-02 | 1973-04-04 | ||
| JPS5910073B2 (ja) * | 1972-10-27 | 1984-03-06 | 株式会社日立製作所 | シリコン・ゲ−トｍｏｓ型半導体装置の製造方法 |
| IN140846B (online.php) * | 1973-08-06 | 1976-12-25 | Rca Corp | |
| US3936859A (en) * | 1973-08-06 | 1976-02-03 | Rca Corporation | Semiconductor device including a conductor surrounded by an insulator |
| JPS5431793B2 (online.php) * | 1973-10-12 | 1979-10-09 | ||
| JPS5075775A (online.php) * | 1973-11-06 | 1975-06-21 | ||
| US3943542A (en) * | 1974-11-06 | 1976-03-09 | International Business Machines, Corporation | High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same |
| US3958323A (en) * | 1975-04-29 | 1976-05-25 | International Business Machines Corporation | Three mask self aligned IGFET fabrication process |
| US4035198A (en) * | 1976-06-30 | 1977-07-12 | International Business Machines Corporation | Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits containing the transistors |
-
1976
- 1976-01-30 JP JP987176A patent/JPS5293278A/ja active Pending
-
1977
- 1977-01-25 DE DE19772702922 patent/DE2702922A1/de not_active Ceased
- 1977-01-28 CA CA270,677A patent/CA1067210A/en not_active Expired
- 1977-01-28 US US05/763,679 patent/US4113533A/en not_active Expired - Lifetime
- 1977-01-28 GB GB3599/77A patent/GB1553533A/en not_active Expired
- 1977-01-28 FR FR7702483A patent/FR2339954A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2702922A1 (de) | 1977-08-04 |
| FR2339954A1 (fr) | 1977-08-26 |
| JPS5293278A (en) | 1977-08-05 |
| CA1067210A (en) | 1979-11-27 |
| GB1553533A (en) | 1979-09-26 |
| US4113533A (en) | 1978-09-12 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |