FR2335958A1 - Element de resistance lineaire pour circuit integre a grande echelle - Google Patents
Element de resistance lineaire pour circuit integre a grande echelleInfo
- Publication number
- FR2335958A1 FR2335958A1 FR7634821A FR7634821A FR2335958A1 FR 2335958 A1 FR2335958 A1 FR 2335958A1 FR 7634821 A FR7634821 A FR 7634821A FR 7634821 A FR7634821 A FR 7634821A FR 2335958 A1 FR2335958 A1 FR 2335958A1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- large scale
- resistance element
- scale integrated
- linear resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/641,469 US4001612A (en) | 1975-12-17 | 1975-12-17 | Linear resistance element for lsi circuitry |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2335958A1 true FR2335958A1 (fr) | 1977-07-15 |
| FR2335958B1 FR2335958B1 (enExample) | 1978-12-29 |
Family
ID=24572528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7634821A Granted FR2335958A1 (fr) | 1975-12-17 | 1976-11-12 | Element de resistance lineaire pour circuit integre a grande echelle |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4001612A (enExample) |
| JP (1) | JPS5274289A (enExample) |
| DE (1) | DE2653484A1 (enExample) |
| FR (1) | FR2335958A1 (enExample) |
| GB (1) | GB1558486A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53147486A (en) * | 1977-05-27 | 1978-12-22 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
| SE7900379L (sv) * | 1978-01-25 | 1979-07-26 | Western Electric Co | Halvledare-integrerad-krets |
| FR2430092A1 (fr) * | 1978-06-29 | 1980-01-25 | Ibm France | Procede de correction du coefficient en tension de resistances semi-conductrices, diffusees ou implantees et resistances ainsi obtenues |
| DE3026361A1 (de) * | 1980-07-11 | 1982-02-04 | Siemens AG, 1000 Berlin und 8000 München | Aus mindestens zwei monolitisch zusammengefassten mis-feldeffekttransistoren bestehender elektrischer widerstand fuer integrierte halbleiterschaltungen |
| JPS5842269A (ja) * | 1981-09-05 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Ｍｉｓ型可変抵抗器 |
| US4430583A (en) * | 1981-10-30 | 1984-02-07 | Bell Telephone Laboratories, Incorporated | Apparatus for increasing the speed of a circuit having a string of IGFETs |
| US4942312A (en) * | 1985-08-19 | 1990-07-17 | Eastman Kodak Company | Integrated-circuit having two NMOS depletion mode transistors for producing stable DC voltage |
| US5071660A (en) * | 1988-06-10 | 1991-12-10 | Phillips Petroleum Company | Process utilizing alcohol oxidase |
| US5010385A (en) * | 1990-03-30 | 1991-04-23 | The United States Of America As Represented By The Secretary Of The Navy | Resistive element using depletion-mode MOSFET's |
| WO2011107161A1 (en) * | 2010-03-05 | 2011-09-09 | Epcos Ag | Resistance component |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5211199B1 (enExample) * | 1970-05-27 | 1977-03-29 | ||
| US3829888A (en) * | 1971-01-08 | 1974-08-13 | Hitachi Ltd | Semiconductor device and the method of making the same |
-
1975
- 1975-12-17 US US05/641,469 patent/US4001612A/en not_active Expired - Lifetime
-
1976
- 1976-11-11 GB GB47022/76A patent/GB1558486A/en not_active Expired
- 1976-11-12 FR FR7634821A patent/FR2335958A1/fr active Granted
- 1976-11-25 DE DE19762653484 patent/DE2653484A1/de not_active Withdrawn
- 1976-12-17 JP JP51151039A patent/JPS5274289A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5274289A (en) | 1977-06-22 |
| GB1558486A (en) | 1980-01-03 |
| JPS5531625B2 (enExample) | 1980-08-19 |
| DE2653484A1 (de) | 1977-06-30 |
| US4001612A (en) | 1977-01-04 |
| FR2335958B1 (enExample) | 1978-12-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |