FR2335958A1 - Element de resistance lineaire pour circuit integre a grande echelle - Google Patents
Element de resistance lineaire pour circuit integre a grande echelleInfo
- Publication number
- FR2335958A1 FR2335958A1 FR7634821A FR7634821A FR2335958A1 FR 2335958 A1 FR2335958 A1 FR 2335958A1 FR 7634821 A FR7634821 A FR 7634821A FR 7634821 A FR7634821 A FR 7634821A FR 2335958 A1 FR2335958 A1 FR 2335958A1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- large scale
- resistance element
- scale integrated
- linear resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/641,469 US4001612A (en) | 1975-12-17 | 1975-12-17 | Linear resistance element for lsi circuitry |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2335958A1 true FR2335958A1 (fr) | 1977-07-15 |
| FR2335958B1 FR2335958B1 (fr) | 1978-12-29 |
Family
ID=24572528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7634821A Granted FR2335958A1 (fr) | 1975-12-17 | 1976-11-12 | Element de resistance lineaire pour circuit integre a grande echelle |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4001612A (fr) |
| JP (1) | JPS5274289A (fr) |
| DE (1) | DE2653484A1 (fr) |
| FR (1) | FR2335958A1 (fr) |
| GB (1) | GB1558486A (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53147486A (en) * | 1977-05-27 | 1978-12-22 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
| SE7900379L (sv) * | 1978-01-25 | 1979-07-26 | Western Electric Co | Halvledare-integrerad-krets |
| FR2430092A1 (fr) * | 1978-06-29 | 1980-01-25 | Ibm France | Procede de correction du coefficient en tension de resistances semi-conductrices, diffusees ou implantees et resistances ainsi obtenues |
| JPS5544883A (en) * | 1978-09-28 | 1980-03-29 | Shin Daiwa Kogyo | Electromotive chain saw |
| DE3026361A1 (de) * | 1980-07-11 | 1982-02-04 | Siemens AG, 1000 Berlin und 8000 München | Aus mindestens zwei monolitisch zusammengefassten mis-feldeffekttransistoren bestehender elektrischer widerstand fuer integrierte halbleiterschaltungen |
| JPS5842269A (ja) * | 1981-09-05 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Ｍｉｓ型可変抵抗器 |
| US4430583A (en) * | 1981-10-30 | 1984-02-07 | Bell Telephone Laboratories, Incorporated | Apparatus for increasing the speed of a circuit having a string of IGFETs |
| US4942312A (en) * | 1985-08-19 | 1990-07-17 | Eastman Kodak Company | Integrated-circuit having two NMOS depletion mode transistors for producing stable DC voltage |
| US5071660A (en) * | 1988-06-10 | 1991-12-10 | Phillips Petroleum Company | Process utilizing alcohol oxidase |
| US5010385A (en) * | 1990-03-30 | 1991-04-23 | The United States Of America As Represented By The Secretary Of The Navy | Resistive element using depletion-mode MOSFET's |
| WO2011107161A1 (fr) * | 2010-03-05 | 2011-09-09 | Epcos Ag | Composant de résistance |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5211199B1 (fr) * | 1970-05-27 | 1977-03-29 | ||
| US3829888A (en) * | 1971-01-08 | 1974-08-13 | Hitachi Ltd | Semiconductor device and the method of making the same |
-
1975
- 1975-12-17 US US05/641,469 patent/US4001612A/en not_active Expired - Lifetime
-
1976
- 1976-11-11 GB GB47022/76A patent/GB1558486A/en not_active Expired
- 1976-11-12 FR FR7634821A patent/FR2335958A1/fr active Granted
- 1976-11-25 DE DE19762653484 patent/DE2653484A1/de not_active Withdrawn
- 1976-12-17 JP JP51151039A patent/JPS5274289A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5274289A (en) | 1977-06-22 |
| US4001612A (en) | 1977-01-04 |
| GB1558486A (en) | 1980-01-03 |
| FR2335958B1 (fr) | 1978-12-29 |
| JPS5531625B2 (fr) | 1980-08-19 |
| DE2653484A1 (de) | 1977-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |