FR2334171A1 - Circuit d'entree permettant d'inserer des paquets de charges dans un dispositif de transfert de charges - Google Patents

Circuit d'entree permettant d'inserer des paquets de charges dans un dispositif de transfert de charges

Info

Publication number
FR2334171A1
FR2334171A1 FR7632295A FR7632295A FR2334171A1 FR 2334171 A1 FR2334171 A1 FR 2334171A1 FR 7632295 A FR7632295 A FR 7632295A FR 7632295 A FR7632295 A FR 7632295A FR 2334171 A1 FR2334171 A1 FR 2334171A1
Authority
FR
France
Prior art keywords
load
transfer device
input circuit
packages
load transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7632295A
Other languages
English (en)
Other versions
FR2334171B1 (fr
Inventor
Lawrence G Heller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2334171A1 publication Critical patent/FR2334171A1/fr
Application granted granted Critical
Publication of FR2334171B1 publication Critical patent/FR2334171B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7632295A 1975-12-02 1976-10-21 Circuit d'entree permettant d'inserer des paquets de charges dans un dispositif de transfert de charges Granted FR2334171A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/636,862 US4035667A (en) 1975-12-02 1975-12-02 Input circuit for inserting charge packets into a charge-transfer-device

Publications (2)

Publication Number Publication Date
FR2334171A1 true FR2334171A1 (fr) 1977-07-01
FR2334171B1 FR2334171B1 (fr) 1978-06-30

Family

ID=24553649

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7632295A Granted FR2334171A1 (fr) 1975-12-02 1976-10-21 Circuit d'entree permettant d'inserer des paquets de charges dans un dispositif de transfert de charges

Country Status (7)

Country Link
US (1) US4035667A (fr)
JP (1) JPS5268380A (fr)
CA (1) CA1097808A (fr)
DE (1) DE2653059A1 (fr)
FR (1) FR2334171A1 (fr)
GB (1) GB1509171A (fr)
IT (1) IT1075990B (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246496A (en) * 1978-07-17 1981-01-20 International Business Machines Corporation Voltage-to-charge transducer
FR2440079A1 (fr) * 1978-10-23 1980-05-23 Westinghouse Electric Corp Element a transfert de charges perfectionne
US4239983A (en) * 1979-03-09 1980-12-16 International Business Machines Corporation Non-destructive charge transfer device differencing circuit
US4627084A (en) * 1979-11-15 1986-12-02 Trw Inc. Differentiation and integration utilizing charge-coupled devices
US4300210A (en) * 1979-12-27 1981-11-10 International Business Machines Corp. Calibrated sensing system
US4503550A (en) * 1982-07-01 1985-03-05 Rca Corporation Dynamic CCD input source pulse generating circuit
DE69731493T2 (de) * 1996-05-28 2005-03-24 Matsushita Electric Industrial Co., Ltd., Kadoma Analoger FIFO-Speicher
US7003068B2 (en) * 2004-06-21 2006-02-21 Kenet, Inc. Device for subtracting or adding a constant amount of charge in a charge-coupled device at high operating frequencies
US7015854B2 (en) * 2004-07-12 2006-03-21 Massachusetts Institute Of Technology Charge-domain A/D converter employing multiple pipelines for improved precision
US6972707B1 (en) 2004-07-12 2005-12-06 Massachusetts Institute Of Technology Sub-ranging pipelined charge-domain analog-to-digital converter with improved resolution and reduced power consumption
US7199409B2 (en) 2004-08-26 2007-04-03 Massachusetts Institute Of Technology Device for subtracting or adding charge in a charge-coupled device
US20060090028A1 (en) * 2004-09-27 2006-04-27 Anthony Michael P Passive differential voltage-to-charge sample-and-hold device
US8773563B2 (en) 2011-05-25 2014-07-08 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8800130B2 (en) 2011-05-25 2014-08-12 Truesense Imaging, Inc. Methods for producing image sensors having multi-purpose architecture

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881117A (en) * 1973-09-10 1975-04-29 Bell Telephone Labor Inc Input circuit for semiconductor charge transfer devices
JPS5649397B2 (fr) * 1974-02-18 1981-11-21

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
1974 INTERNATIONAL ELECTRON DEVICES MEETING, DECEMBRE 1974, TECHNICAL DIGEST, NEW YORK, S.P.EMMONS ET AL "A LOW-NOISE CCD INPUT WITH REDUCED SENSITIVITY TO THRESHOLD VOLTAGE, PAGES 233-235) *

Also Published As

Publication number Publication date
JPS5531627B2 (fr) 1980-08-19
JPS5268380A (en) 1977-06-07
FR2334171B1 (fr) 1978-06-30
CA1097808A (fr) 1981-03-17
IT1075990B (it) 1985-04-22
GB1509171A (en) 1978-04-26
US4035667A (en) 1977-07-12
DE2653059A1 (de) 1977-06-08

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Legal Events

Date Code Title Description
ST Notification of lapse