FR2330113B3 - - Google Patents
Info
- Publication number
- FR2330113B3 FR2330113B3 FR7632647A FR7632647A FR2330113B3 FR 2330113 B3 FR2330113 B3 FR 2330113B3 FR 7632647 A FR7632647 A FR 7632647A FR 7632647 A FR7632647 A FR 7632647A FR 2330113 B3 FR2330113 B3 FR 2330113B3
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62659775A | 1975-10-28 | 1975-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2330113A1 FR2330113A1 (fr) | 1977-05-27 |
FR2330113B3 true FR2330113B3 (fr) | 1979-07-13 |
Family
ID=24511071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7632647A Granted FR2330113A1 (fr) | 1975-10-28 | 1976-10-28 | Circuit de memoire |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5255341A (fr) |
DE (1) | DE2646245A1 (fr) |
FR (1) | FR2330113A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5780828A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS57186354A (en) * | 1981-05-13 | 1982-11-16 | Hitachi Ltd | Semiconductor memory storage and manufacture thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
FR2239737B1 (fr) * | 1973-08-02 | 1980-12-05 | Texas Instruments Inc | |
JPS5040246A (fr) * | 1973-08-03 | 1975-04-12 |
-
1976
- 1976-10-13 DE DE19762646245 patent/DE2646245A1/de active Pending
- 1976-10-28 FR FR7632647A patent/FR2330113A1/fr active Granted
- 1976-10-28 JP JP51128913A patent/JPS5255341A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5255341A (en) | 1977-05-06 |
FR2330113A1 (fr) | 1977-05-27 |
DE2646245A1 (de) | 1977-05-05 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |