FR2324755B1 - - Google Patents

Info

Publication number
FR2324755B1
FR2324755B1 FR7528778A FR7528778A FR2324755B1 FR 2324755 B1 FR2324755 B1 FR 2324755B1 FR 7528778 A FR7528778 A FR 7528778A FR 7528778 A FR7528778 A FR 7528778A FR 2324755 B1 FR2324755 B1 FR 2324755B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7528778A
Other languages
French (fr)
Other versions
FR2324755A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7528778A priority Critical patent/FR2324755A1/fr
Priority to US05/722,472 priority patent/US4094764A/en
Priority to JP51111655A priority patent/JPS5256084A/ja
Publication of FR2324755A1 publication Critical patent/FR2324755A1/fr
Application granted granted Critical
Publication of FR2324755B1 publication Critical patent/FR2324755B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
FR7528778A 1975-09-19 1975-09-19 Dispositif de pulverisation cathodique de grande vitesse de depot Granted FR2324755A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7528778A FR2324755A1 (fr) 1975-09-19 1975-09-19 Dispositif de pulverisation cathodique de grande vitesse de depot
US05/722,472 US4094764A (en) 1975-09-19 1976-09-13 Device for cathodic sputtering at a high deposition rate
JP51111655A JPS5256084A (en) 1975-09-19 1976-09-17 Cathodic spattering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7528778A FR2324755A1 (fr) 1975-09-19 1975-09-19 Dispositif de pulverisation cathodique de grande vitesse de depot

Publications (2)

Publication Number Publication Date
FR2324755A1 FR2324755A1 (fr) 1977-04-15
FR2324755B1 true FR2324755B1 (US06397114-20020528-M00001.png) 1978-09-22

Family

ID=9160205

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7528778A Granted FR2324755A1 (fr) 1975-09-19 1975-09-19 Dispositif de pulverisation cathodique de grande vitesse de depot

Country Status (3)

Country Link
US (1) US4094764A (US06397114-20020528-M00001.png)
JP (1) JPS5256084A (US06397114-20020528-M00001.png)
FR (1) FR2324755A1 (US06397114-20020528-M00001.png)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158589A (en) * 1977-12-30 1979-06-19 International Business Machines Corporation Negative ion extractor for a plasma etching apparatus
FR2423065A1 (fr) * 1978-04-12 1979-11-09 Battelle Memorial Institute Procede de fabrication d'electrodes pour piles a combustible, dispositif pour la mise en oeuvre du procede et electrodes resultant de ce procede
US4297189A (en) * 1980-06-27 1981-10-27 Rockwell International Corporation Deposition of ordered crystalline films
JPS57111031A (en) * 1980-12-27 1982-07-10 Clarion Co Ltd Sputtering device
JPS5850312B2 (ja) * 1981-02-18 1983-11-09 株式会社日立製作所 スパツタリング装置
FR2501727A1 (fr) * 1981-03-13 1982-09-17 Vide Traitement Procede de traitements thermochimiques de metaux par bombardement ionique
US4362611A (en) * 1981-07-27 1982-12-07 International Business Machines Corporation Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield
US4645715A (en) * 1981-09-23 1987-02-24 Energy Conversion Devices, Inc. Coating composition and method
US4412905A (en) * 1982-05-12 1983-11-01 Dowty Electronics Limited Vacuum deposition apparatus
US4474659A (en) * 1982-05-28 1984-10-02 Fazal Fazlin Plated-through-hole method
US4407712A (en) * 1982-06-01 1983-10-04 The United States Of America As Represented By The Secretary Of The Army Hollow cathode discharge source of metal vapor
US4415427A (en) * 1982-09-30 1983-11-15 Gte Products Corporation Thin film deposition by sputtering
US4511593A (en) * 1983-01-17 1985-04-16 Multi-Arc Vacuum Systems Inc. Vapor deposition apparatus and method
US4420386A (en) * 1983-04-22 1983-12-13 White Engineering Corporation Method for pure ion plating using magnetic fields
DE3411536A1 (de) * 1983-07-06 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Magnetronkatode fuer katodenzerstaeubungsanlagen
US4622452A (en) * 1983-07-21 1986-11-11 Multi-Arc Vacuum Systems, Inc. Electric arc vapor deposition electrode apparatus
US4522844A (en) * 1983-09-30 1985-06-11 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Corrosion resistant coating
JPH0627323B2 (ja) * 1983-12-26 1994-04-13 株式会社日立製作所 スパツタリング方法及びその装置
DE3521053A1 (de) * 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum aufbringen duenner schichten auf ein substrat
US4933058A (en) * 1986-01-23 1990-06-12 The Gillette Company Formation of hard coatings on cutting edges
JP2594935B2 (ja) * 1987-04-01 1997-03-26 株式会社日立製作所 スパツタ成膜方法と装置
DE3709175A1 (de) * 1987-03-20 1988-09-29 Leybold Ag Verfahren und vorrichtung zum aufstaeuben hochohmiger schichten durch katodenzerstaeubung
JPS6454733A (en) * 1987-08-26 1989-03-02 Toshiba Corp Production device for semiconductor
US4826365A (en) * 1988-01-20 1989-05-02 White Engineering Corporation Material-working tools and method for lubricating
KR970002340B1 (ko) * 1988-07-15 1997-03-03 미쓰비시 가세이 가부시끼가이샤 자기 기록 매체의 제조방법
US5114559A (en) * 1989-09-26 1992-05-19 Ricoh Company, Ltd. Thin film deposition system
US5026470A (en) * 1989-12-19 1991-06-25 International Business Machines Sputtering apparatus
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target
DE4108001C1 (US06397114-20020528-M00001.png) * 1991-03-13 1992-07-09 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
US5656138A (en) * 1991-06-18 1997-08-12 The Optical Corporation Of America Very high vacuum magnetron sputtering method and apparatus for precision optical coatings
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
US5630916A (en) * 1993-03-02 1997-05-20 Cvc Products, Inc. Magnetic orienting device for thin film deposition and method of use
US5489369A (en) * 1993-10-25 1996-02-06 Viratec Thin Films, Inc. Method and apparatus for thin film coating an article
IL108677A (en) * 1994-02-17 1997-11-20 Thin Films Ltd Sputtering method and apparatus for depositing a coating onto a substrate
DE4422472C2 (de) * 1994-06-28 1996-09-05 Dresden Vakuumtech Gmbh Einrichtung zum Hochgeschwindigkeitsgasfluß-Aufstäuben
JP2882572B2 (ja) * 1994-08-31 1999-04-12 インターナショナル・ビジネス・マシーンズ・コーポレイション 金属薄膜をレーザで平坦化する方法
US5591313A (en) * 1995-06-30 1997-01-07 Tabco Technologies, Inc. Apparatus and method for localized ion sputtering
US5656091A (en) * 1995-11-02 1997-08-12 Vacuum Plating Technology Corporation Electric arc vapor deposition apparatus and method
JP3868020B2 (ja) * 1995-11-13 2007-01-17 キヤノンアネルバ株式会社 遠距離スパッタ装置及び遠距離スパッタ方法
US5702573A (en) * 1996-01-29 1997-12-30 Varian Associates, Inc. Method and apparatus for improved low pressure collimated magnetron sputter deposition of metal films
JP3905572B2 (ja) * 1996-03-04 2007-04-18 多津男 庄司 高融点物質蒸発装置
US5736019A (en) * 1996-03-07 1998-04-07 Bernick; Mark A. Sputtering cathode
JP4562818B2 (ja) * 1997-02-14 2010-10-13 パナソニック株式会社 人工格子多層膜の着膜装置
DE59702419D1 (de) 1997-07-15 2000-11-09 Unaxis Trading Ag Truebbach Verfahren und Vorrichtung zur Sputterbeschichtung
US6106682A (en) * 1998-05-22 2000-08-22 Cvc Products, Inc. Thin-film processing electromagnet for low-skew magnetic orientation
US6042707A (en) * 1998-05-22 2000-03-28 Cvc Products, Inc. Multiple-coil electromagnet for magnetically orienting thin films
US6037717A (en) * 1999-01-04 2000-03-14 Advanced Ion Technology, Inc. Cold-cathode ion source with a controlled position of ion beam
JP4066044B2 (ja) * 2002-11-08 2008-03-26 信行 高橋 成膜方法及びスパッタ装置
US10156011B2 (en) * 2014-10-22 2018-12-18 Case Western Reserve University Apparatus for direct-write sputter deposition and method therefor
US11393665B2 (en) * 2018-08-10 2022-07-19 Applied Materials, Inc. Physical vapor deposition (PVD) chamber with reduced arcing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1527218A (fr) * 1967-04-21 1968-05-31 Csf Dispositif pour pulvérisation cathodique
GB1172106A (en) * 1967-06-29 1969-11-26 Edwards High Vacuum Int Ltd Improvements in or relating to Pressure Control in Vacuum Apparatus
US3669861A (en) * 1967-08-28 1972-06-13 Texas Instruments Inc R. f. discharge cleaning to improve adhesion
DE1905058C3 (de) * 1969-02-01 1973-10-04 Leybold-Heraeus Gmbh & Co, Kg, 5000 Koeln-Bayental Vorrichtung für die Beschichtung von Werkstücken durch Hochfrequenz-Plasmazerstäubung von Werkstoffen im Vakuum
US3669860A (en) * 1970-04-01 1972-06-13 Zenith Radio Corp Method and apparatus for applying a film to a substrate surface by diode sputtering
US3884793A (en) * 1971-09-07 1975-05-20 Telic Corp Electrode type glow discharge apparatus
GB1356769A (en) * 1973-03-27 1974-06-12 Cit Alcatel Apparatus and method for depositing thin layers on a substrate
US3830721A (en) * 1973-08-22 1974-08-20 Atomic Energy Commission Hollow cathode sputtering device

Also Published As

Publication number Publication date
JPS5256084A (en) 1977-05-09
US4094764A (en) 1978-06-13
FR2324755A1 (fr) 1977-04-15

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse