FR2320635A1 - Dispositif de protection pour transistor, notamment pour transistor de circuit integre monolithique, et transistor pourvu d'un tel dispositif - Google Patents

Dispositif de protection pour transistor, notamment pour transistor de circuit integre monolithique, et transistor pourvu d'un tel dispositif

Info

Publication number
FR2320635A1
FR2320635A1 FR7524427A FR7524427A FR2320635A1 FR 2320635 A1 FR2320635 A1 FR 2320635A1 FR 7524427 A FR7524427 A FR 7524427A FR 7524427 A FR7524427 A FR 7524427A FR 2320635 A1 FR2320635 A1 FR 2320635A1
Authority
FR
France
Prior art keywords
transistor
integrated circuit
monolithic integrated
protection device
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7524427A
Other languages
English (en)
French (fr)
Other versions
FR2320635B1 (cg-RX-API-DMAC10.html
Inventor
Jean-Michel Moreau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7524427A priority Critical patent/FR2320635A1/fr
Priority to US05/710,880 priority patent/US4103181A/en
Priority to DE2635218A priority patent/DE2635218C2/de
Priority to IT50784/76A priority patent/IT1083985B/it
Publication of FR2320635A1 publication Critical patent/FR2320635A1/fr
Application granted granted Critical
Publication of FR2320635B1 publication Critical patent/FR2320635B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7524427A 1975-08-05 1975-08-05 Dispositif de protection pour transistor, notamment pour transistor de circuit integre monolithique, et transistor pourvu d'un tel dispositif Granted FR2320635A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7524427A FR2320635A1 (fr) 1975-08-05 1975-08-05 Dispositif de protection pour transistor, notamment pour transistor de circuit integre monolithique, et transistor pourvu d'un tel dispositif
US05/710,880 US4103181A (en) 1975-08-05 1976-08-02 Monolithic integrated transistor and protective circuit therefor
DE2635218A DE2635218C2 (de) 1975-08-05 1976-08-05 Anordnung zum Schutz eines Transistors
IT50784/76A IT1083985B (it) 1975-08-05 1976-08-05 Dispositivo di protezione per transistor specialmente per transistor di circuito integrato monolitico e transistor munito di un tale dispositivo

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7524427A FR2320635A1 (fr) 1975-08-05 1975-08-05 Dispositif de protection pour transistor, notamment pour transistor de circuit integre monolithique, et transistor pourvu d'un tel dispositif

Publications (2)

Publication Number Publication Date
FR2320635A1 true FR2320635A1 (fr) 1977-03-04
FR2320635B1 FR2320635B1 (cg-RX-API-DMAC10.html) 1977-12-16

Family

ID=9158789

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7524427A Granted FR2320635A1 (fr) 1975-08-05 1975-08-05 Dispositif de protection pour transistor, notamment pour transistor de circuit integre monolithique, et transistor pourvu d'un tel dispositif

Country Status (4)

Country Link
US (1) US4103181A (cg-RX-API-DMAC10.html)
DE (1) DE2635218C2 (cg-RX-API-DMAC10.html)
FR (1) FR2320635A1 (cg-RX-API-DMAC10.html)
IT (1) IT1083985B (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2476936A1 (fr) * 1980-02-25 1981-08-28 Philips Nv Circuit d'amplification
FR2485824A1 (fr) * 1980-06-26 1981-12-31 Rca Corp Circuit de protection a transistor
FR2540304A1 (fr) * 1983-01-31 1984-08-03 Ates Componenti Elettron Dispositif de protection pour un element de puissance d'un circuit integre

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE423168B (sv) * 1977-03-07 1982-04-13 Philippe Lataire Anordning for styrning av basstrommen till effektransistorer
SE409789B (sv) * 1978-01-10 1979-09-03 Ericsson Telefon Ab L M Overstromsskyddad transistor
DE3044842C2 (de) * 1980-11-28 1986-09-04 Schoppe & Faeser Gmbh, 4950 Minden Verfahren zum Einschalten von im Schaltbetrieb arbeitenden Leistungstransistoren und Schaltungsanordnungen zur Durchführung des Verfahrens
DE3104015C2 (de) * 1981-02-05 1984-10-11 Siemens AG, 1000 Berlin und 8000 München Überstromschutzanordnung für einen Halbleiterschalter
US4481553A (en) * 1982-04-05 1984-11-06 General Electric Company Protection circuit
DE3416404A1 (de) * 1984-05-04 1985-11-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte planare halbleiteranordnung und verfahren zu dessen herstellung
DE3638923A1 (de) * 1986-11-14 1988-05-26 Telefunken Electronic Gmbh Integrierte schaltungsanordnung
US4890015A (en) * 1988-01-29 1989-12-26 Texas Instruments Incorporated Method and circuitry for controlling the compensation of negative internal ground voltage fluctuations
GB9424666D0 (en) * 1994-12-07 1995-02-01 Philips Electronics Uk Ltd A protected switch
DE10201056B4 (de) * 2002-01-14 2007-06-21 Infineon Technologies Ag Halbleitereinrichtung mit einem bipolaren Schutztransistor
FR3057088A1 (fr) * 2016-09-30 2018-04-06 Stmicroelectronics (Rousset) Sas Detecteur laser picosecondes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3300658A (en) * 1958-11-12 1967-01-24 Transitron Electronic Corp Semi-conductor amplifying device
US3562547A (en) * 1967-04-17 1971-02-09 Ibm Protection diode for integrated circuit
US3573573A (en) * 1968-12-23 1971-04-06 Ibm Memory cell with buried load impedances
US3654530A (en) * 1970-06-22 1972-04-04 Ibm Integrated clamping circuit
IT958867B (it) * 1972-05-15 1973-10-30 Semiconduttori Spa Sgs Soc Gen Dispositivo di protezione per un elemento di potenza di un circuito integrato
JPS5240017B2 (cg-RX-API-DMAC10.html) * 1972-10-16 1977-10-08

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2476936A1 (fr) * 1980-02-25 1981-08-28 Philips Nv Circuit d'amplification
FR2485824A1 (fr) * 1980-06-26 1981-12-31 Rca Corp Circuit de protection a transistor
FR2540304A1 (fr) * 1983-01-31 1984-08-03 Ates Componenti Elettron Dispositif de protection pour un element de puissance d'un circuit integre

Also Published As

Publication number Publication date
US4103181A (en) 1978-07-25
DE2635218A1 (de) 1977-02-24
DE2635218C2 (de) 1984-08-23
IT1083985B (it) 1985-05-25
FR2320635B1 (cg-RX-API-DMAC10.html) 1977-12-16

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