FR2316800B1 - - Google Patents

Info

Publication number
FR2316800B1
FR2316800B1 FR7615576A FR7615576A FR2316800B1 FR 2316800 B1 FR2316800 B1 FR 2316800B1 FR 7615576 A FR7615576 A FR 7615576A FR 7615576 A FR7615576 A FR 7615576A FR 2316800 B1 FR2316800 B1 FR 2316800B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7615576A
Other languages
French (fr)
Other versions
FR2316800A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2316800A1 publication Critical patent/FR2316800A1/fr
Application granted granted Critical
Publication of FR2316800B1 publication Critical patent/FR2316800B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205Substrate bias-voltage generators
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Logic Circuits (AREA)
FR7615576A 1975-06-30 1976-05-17 Circuit de polarisation de substrat avec regulation de la tension de seuil Granted FR2316800A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59198575A 1975-06-30 1975-06-30

Publications (2)

Publication Number Publication Date
FR2316800A1 FR2316800A1 (fr) 1977-01-28
FR2316800B1 true FR2316800B1 (zh) 1978-11-17

Family

ID=24368781

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615576A Granted FR2316800A1 (fr) 1975-06-30 1976-05-17 Circuit de polarisation de substrat avec regulation de la tension de seuil

Country Status (4)

Country Link
JP (1) JPS525281A (zh)
DE (1) DE2620973A1 (zh)
FR (1) FR2316800A1 (zh)
IT (1) IT1063327B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4228526A (en) * 1978-12-29 1980-10-14 International Business Machines Corporation Line-addressable serial-parallel-serial array
JPS5758351A (en) * 1980-09-24 1982-04-08 Toshiba Corp Substrate biasing device
JP3635681B2 (ja) * 1994-07-15 2005-04-06 ソニー株式会社 バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7212509A (zh) * 1972-09-15 1974-03-19

Also Published As

Publication number Publication date
DE2620973A1 (de) 1977-01-27
IT1063327B (it) 1985-02-11
FR2316800A1 (fr) 1977-01-28
JPS525281A (en) 1977-01-14

Similar Documents

Publication Publication Date Title
FR2316800B1 (zh)
JPS5210310U (zh)
JPS5619475Y2 (zh)
JPS5434648B2 (zh)
JPS5220522U (zh)
JPS5290447U (zh)
JPS5536599Y2 (zh)
JPS5347424Y2 (zh)
JPS51129101U (zh)
JPS51132309U (zh)
JPS5245711U (zh)
CH586771A5 (zh)
BG22103A1 (zh)
CH596351A5 (zh)
CH596405A5 (zh)
CH582390A5 (zh)
CH574010A5 (zh)
CH1092575A4 (zh)
BG23308A1 (zh)
BG23097A1 (zh)
CH592786A5 (zh)
CH586474A5 (zh)
BG23058A1 (zh)
CH584094A5 (zh)
CH592908B5 (zh)

Legal Events

Date Code Title Description
ST Notification of lapse