FR2314759A1 - CADMIUM TELLURIDE COMPENSATES WITH MAGNESIUM OR BERYLLIUM POSSIBLY DOPED AND ITS APPLICATIONS - Google Patents

CADMIUM TELLURIDE COMPENSATES WITH MAGNESIUM OR BERYLLIUM POSSIBLY DOPED AND ITS APPLICATIONS

Info

Publication number
FR2314759A1
FR2314759A1 FR7519262A FR7519262A FR2314759A1 FR 2314759 A1 FR2314759 A1 FR 2314759A1 FR 7519262 A FR7519262 A FR 7519262A FR 7519262 A FR7519262 A FR 7519262A FR 2314759 A1 FR2314759 A1 FR 2314759A1
Authority
FR
France
Prior art keywords
beryllium
compensates
magnesium
applications
cadmium telluride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7519262A
Other languages
French (fr)
Other versions
FR2314759B1 (en
Inventor
Bernard Schaub
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7519262A priority Critical patent/FR2314759A1/en
Priority to GB23309/76A priority patent/GB1498374A/en
Priority to BE167728A priority patent/BE842720A/en
Priority to CA254,751A priority patent/CA1076460A/en
Priority to DE19762626841 priority patent/DE2626841A1/en
Priority to NL7606595A priority patent/NL7606595A/en
Priority to JP51072104A priority patent/JPS522896A/en
Publication of FR2314759A1 publication Critical patent/FR2314759A1/en
Application granted granted Critical
Publication of FR2314759B1 publication Critical patent/FR2314759B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/102—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type for infrared and ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
    • C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7519262A 1975-06-19 1975-06-19 CADMIUM TELLURIDE COMPENSATES WITH MAGNESIUM OR BERYLLIUM POSSIBLY DOPED AND ITS APPLICATIONS Granted FR2314759A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7519262A FR2314759A1 (en) 1975-06-19 1975-06-19 CADMIUM TELLURIDE COMPENSATES WITH MAGNESIUM OR BERYLLIUM POSSIBLY DOPED AND ITS APPLICATIONS
GB23309/76A GB1498374A (en) 1975-06-19 1976-06-04 Cadmium telluride product
BE167728A BE842720A (en) 1975-06-19 1976-06-09 CADMIUM TELLURIDE COMPENSATES WITH MAGNESIUM OR BERYLLIUM POSSIBLY DOPED AND ITS APPLICATIONS
CA254,751A CA1076460A (en) 1975-06-19 1976-06-14 Cadmium telluride compensated with magnesium or beryllium
DE19762626841 DE2626841A1 (en) 1975-06-19 1976-06-15 SINGLE CRYSTALLINE SEMI-CONDUCTIVE CADMIUM TELLURIDE AND ITS USES
NL7606595A NL7606595A (en) 1975-06-19 1976-06-17 PROCESS FOR THE PREPARATION OF ANY DODATED MAGNESIUM OR BERYLLIUM COMPENSATED CADMIUM TELLURIDE AND PRODUCTS OBTAINED BY APPLICATION.
JP51072104A JPS522896A (en) 1975-06-19 1976-06-18 Cadmium telluride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7519262A FR2314759A1 (en) 1975-06-19 1975-06-19 CADMIUM TELLURIDE COMPENSATES WITH MAGNESIUM OR BERYLLIUM POSSIBLY DOPED AND ITS APPLICATIONS

Publications (2)

Publication Number Publication Date
FR2314759A1 true FR2314759A1 (en) 1977-01-14
FR2314759B1 FR2314759B1 (en) 1980-05-09

Family

ID=9156769

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7519262A Granted FR2314759A1 (en) 1975-06-19 1975-06-19 CADMIUM TELLURIDE COMPENSATES WITH MAGNESIUM OR BERYLLIUM POSSIBLY DOPED AND ITS APPLICATIONS

Country Status (7)

Country Link
JP (1) JPS522896A (en)
BE (1) BE842720A (en)
CA (1) CA1076460A (en)
DE (1) DE2626841A1 (en)
FR (1) FR2314759A1 (en)
GB (1) GB1498374A (en)
NL (1) NL7606595A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261647A2 (en) * 1986-09-26 1988-03-30 Nippon Mining Company Limited High resistivity CdTe crystal and process for producing the same
FR2703696A1 (en) * 1993-04-08 1994-10-14 Eurorad 2 6 Sarl Process for obtaining a doped crystalline material based on tellurium and cadmium and detector incorporating such a material
FR2836931A1 (en) * 2002-03-05 2003-09-12 Eurorad 2 6 Production of semiconductive telluride crystals containing cadmium, zinc and/or selenium, used in a nuclear radiation detector, involves incorporation of iron, and Group III element(s) and using Travelling Solvent or Bridgman method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2308356A (en) * 1995-12-19 1997-06-25 Heatvision Technics Corp Processing complex semiconductors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261647A2 (en) * 1986-09-26 1988-03-30 Nippon Mining Company Limited High resistivity CdTe crystal and process for producing the same
EP0261647A3 (en) * 1986-09-26 1989-08-16 Nippon Mining Company Limited High resistivity cdte crystal and process for producing the same
FR2703696A1 (en) * 1993-04-08 1994-10-14 Eurorad 2 6 Sarl Process for obtaining a doped crystalline material based on tellurium and cadmium and detector incorporating such a material
FR2836931A1 (en) * 2002-03-05 2003-09-12 Eurorad 2 6 Production of semiconductive telluride crystals containing cadmium, zinc and/or selenium, used in a nuclear radiation detector, involves incorporation of iron, and Group III element(s) and using Travelling Solvent or Bridgman method
US7067008B2 (en) 2002-03-05 2006-06-27 Eurorad 2-6 Sa Process for the production of Cd XTe semiconductor crystals with high resistivity and resulting crystalline material

Also Published As

Publication number Publication date
CA1076460A (en) 1980-04-29
GB1498374A (en) 1978-01-18
JPS522896A (en) 1977-01-10
BE842720A (en) 1976-10-01
NL7606595A (en) 1976-12-21
FR2314759B1 (en) 1980-05-09
DE2626841A1 (en) 1976-12-30

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Legal Events

Date Code Title Description
ST Notification of lapse