FR2314264A2 - Very pure thin films obtd. by reactive sputtering - using high frequency discharge in chamber contg. reaction gases - Google Patents

Very pure thin films obtd. by reactive sputtering - using high frequency discharge in chamber contg. reaction gases

Info

Publication number
FR2314264A2
FR2314264A2 FR7518043A FR7518043A FR2314264A2 FR 2314264 A2 FR2314264 A2 FR 2314264A2 FR 7518043 A FR7518043 A FR 7518043A FR 7518043 A FR7518043 A FR 7518043A FR 2314264 A2 FR2314264 A2 FR 2314264A2
Authority
FR
France
Prior art keywords
high frequency
thin films
reactive sputtering
reaction gases
contg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7518043A
Other languages
French (fr)
Other versions
FR2314264B2 (en
Inventor
Bernard Bourdon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cegelec SA
Original Assignee
Cegelec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cegelec SA filed Critical Cegelec SA
Priority to FR7518043A priority Critical patent/FR2314264A2/en
Publication of FR2314264A2 publication Critical patent/FR2314264A2/en
Application granted granted Critical
Publication of FR2314264B2 publication Critical patent/FR2314264B2/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Film is formed by chemical vapour deposition, where a substrate is located in a chamber fed with a reaction gas. The substrate is located between two conducting surfaces across which a high-frequency potential is applied to obtain a plasma. Gas has a press. of 10-2 to 10-4 torr. The substrate is pref. Si, whereas the gas is either (a) mainly N2 contg. SiH4 so a deposit of Si3N4 is obtd.; or (b) mainly H2 or He, contg. SiH4 to produce a deposit of Si. Reactive cathodic sputtering esp. in mfg. semiconductors. The process can also be used to deposit GaN or doped layers of Si, e.g using B2H6 or AsH3 for doping with B or As.
FR7518043A 1975-06-10 1975-06-10 Very pure thin films obtd. by reactive sputtering - using high frequency discharge in chamber contg. reaction gases Granted FR2314264A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7518043A FR2314264A2 (en) 1975-06-10 1975-06-10 Very pure thin films obtd. by reactive sputtering - using high frequency discharge in chamber contg. reaction gases

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7518043A FR2314264A2 (en) 1975-06-10 1975-06-10 Very pure thin films obtd. by reactive sputtering - using high frequency discharge in chamber contg. reaction gases

Publications (2)

Publication Number Publication Date
FR2314264A2 true FR2314264A2 (en) 1977-01-07
FR2314264B2 FR2314264B2 (en) 1980-03-28

Family

ID=9156264

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7518043A Granted FR2314264A2 (en) 1975-06-10 1975-06-10 Very pure thin films obtd. by reactive sputtering - using high frequency discharge in chamber contg. reaction gases

Country Status (1)

Country Link
FR (1) FR2314264A2 (en)

Also Published As

Publication number Publication date
FR2314264B2 (en) 1980-03-28

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