FR2305856A1 - Methode de fabrication d'un redresseur commande par semiconducteur a activation par la lumiere - Google Patents

Methode de fabrication d'un redresseur commande par semiconducteur a activation par la lumiere

Info

Publication number
FR2305856A1
FR2305856A1 FR7608368A FR7608368A FR2305856A1 FR 2305856 A1 FR2305856 A1 FR 2305856A1 FR 7608368 A FR7608368 A FR 7608368A FR 7608368 A FR7608368 A FR 7608368A FR 2305856 A1 FR2305856 A1 FR 2305856A1
Authority
FR
France
Prior art keywords
manufacturing
controlled rectifier
light activation
semiconductor controlled
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7608368A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/561,732 external-priority patent/US3991460A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2305856A1 publication Critical patent/FR2305856A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2817—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using reflective elements to split or combine optical signals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Thyristors (AREA)
FR7608368A 1975-03-25 1976-03-23 Methode de fabrication d'un redresseur commande par semiconducteur a activation par la lumiere Withdrawn FR2305856A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/561,732 US3991460A (en) 1973-08-29 1975-03-25 Method of making a light activated semiconductor controlled rectifier

Publications (1)

Publication Number Publication Date
FR2305856A1 true FR2305856A1 (fr) 1976-10-22

Family

ID=24243197

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7608368A Withdrawn FR2305856A1 (fr) 1975-03-25 1976-03-23 Methode de fabrication d'un redresseur commande par semiconducteur a activation par la lumiere

Country Status (7)

Country Link
JP (1) JPS51122390A (enExample)
BE (1) BE839851A (enExample)
CA (1) CA1042534A (enExample)
DE (1) DE2612551A1 (enExample)
FR (1) FR2305856A1 (enExample)
GB (1) GB1500473A (enExample)
IN (1) IN143215B (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1339543A (fr) * 1962-06-08 1963-10-11 Europ Des Semi Conducteurs Soc Cellule photovoltaïque à haut rendement
US3487223A (en) * 1968-07-10 1969-12-30 Us Air Force Multiple internal reflection structure in a silicon detector which is obtained by sandblasting
FR2046976A1 (enExample) * 1969-06-20 1971-03-12 Westinghouse Electric Corp
US3830665A (en) * 1972-12-07 1974-08-20 Motorola Inc Method for delineating semiconductor junctions

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1339543A (fr) * 1962-06-08 1963-10-11 Europ Des Semi Conducteurs Soc Cellule photovoltaïque à haut rendement
US3487223A (en) * 1968-07-10 1969-12-30 Us Air Force Multiple internal reflection structure in a silicon detector which is obtained by sandblasting
FR2046976A1 (enExample) * 1969-06-20 1971-03-12 Westinghouse Electric Corp
US3830665A (en) * 1972-12-07 1974-08-20 Motorola Inc Method for delineating semiconductor junctions

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV2318/74 *
NV700/67 *

Also Published As

Publication number Publication date
GB1500473A (en) 1978-02-08
JPS5410838B2 (enExample) 1979-05-10
JPS51122390A (en) 1976-10-26
BE839851A (fr) 1976-09-22
DE2612551A1 (de) 1976-10-07
CA1042534A (en) 1978-11-14
IN143215B (enExample) 1977-10-15

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Legal Events

Date Code Title Description
ST Notification of lapse
AR Application made for restoration
BR Restoration of rights
ST Notification of lapse