FR2305825B1 - - Google Patents
Info
- Publication number
- FR2305825B1 FR2305825B1 FR7603003A FR7603003A FR2305825B1 FR 2305825 B1 FR2305825 B1 FR 2305825B1 FR 7603003 A FR7603003 A FR 7603003A FR 7603003 A FR7603003 A FR 7603003A FR 2305825 B1 FR2305825 B1 FR 2305825B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/562,695 US3969707A (en) | 1975-03-27 | 1975-03-27 | Content-Addressable Memory capable of a high speed search |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2305825A1 FR2305825A1 (fr) | 1976-10-22 |
| FR2305825B1 true FR2305825B1 (OSRAM) | 1978-11-10 |
Family
ID=24247372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7603003A Granted FR2305825A1 (fr) | 1975-03-27 | 1976-01-29 | Memoire associative avec capacite de recherche a grande vitesse |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3969707A (OSRAM) |
| JP (1) | JPS5816557B2 (OSRAM) |
| DE (1) | DE2610881C2 (OSRAM) |
| FR (1) | FR2305825A1 (OSRAM) |
| GB (1) | GB1488473A (OSRAM) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4283771A (en) * | 1978-07-31 | 1981-08-11 | International Business Machines Corporation | On-chip bubble domain relational data base system |
| DE3138993A1 (de) * | 1981-09-30 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Speicherzelle, assoziativspeicher und verfahren zu deren betrieb |
| US4460984A (en) * | 1981-12-30 | 1984-07-17 | International Business Machines Corporation | Memory array with switchable upper and lower word lines |
| JPS58212698A (ja) * | 1982-06-04 | 1983-12-10 | Matsushita Electric Ind Co Ltd | 記憶装置 |
| US4831585A (en) * | 1985-11-27 | 1989-05-16 | Massachusetts Institute Of Technology | Four transistor cross-coupled bitline content addressable memory |
| JPS62165794A (ja) * | 1986-01-17 | 1987-07-22 | Toshiba Corp | 連想記憶用メモリセル |
| JPS6415660A (en) * | 1987-07-10 | 1989-01-19 | Hitachi Ltd | Analyser equipped with reaction container, reaction container and preparation thereof |
| US4922455A (en) * | 1987-09-08 | 1990-05-01 | International Business Machines Corporation | Memory cell with active device for saturation capacitance discharge prior to writing |
| US4991138A (en) * | 1989-04-03 | 1991-02-05 | International Business Machines Corporation | High speed memory cell with multiple port capability |
| US5053991A (en) * | 1989-10-06 | 1991-10-01 | Sanders Associates, Inc. | Content-addressable memory with soft-match capability |
| US5125098A (en) * | 1989-10-06 | 1992-06-23 | Sanders Associates, Inc. | Finite state-machine employing a content-addressable memory |
| US5267190A (en) * | 1991-03-11 | 1993-11-30 | Unisys Corporation | Simultaneous search-write content addressable memory |
| US5396449A (en) * | 1993-12-21 | 1995-03-07 | International Business Machines Corporation | Fast content addressable memory with reduced power consumption |
| US6331942B1 (en) * | 2000-09-09 | 2001-12-18 | Tality, L.P. | Content addressable memory cell and design methodology utilizing grounding circuitry |
| KR100406924B1 (ko) * | 2001-10-12 | 2003-11-21 | 삼성전자주식회사 | 내용 주소화 메모리 셀 |
| JP5441272B2 (ja) * | 2011-01-28 | 2014-03-12 | 株式会社東芝 | 半導体記憶装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3573756A (en) * | 1968-05-13 | 1971-04-06 | Motorola Inc | Associative memory circuitry |
| US3548389A (en) * | 1968-12-31 | 1970-12-15 | Honeywell Inc | Transistor associative memory cell |
| US3703709A (en) * | 1969-05-24 | 1972-11-21 | Nippon Electric Co | High speed associative memory circuits |
| US3609710A (en) * | 1969-05-29 | 1971-09-28 | Bell Telephone Labor Inc | Associative memory cell with interrogation on normal digit circuits |
-
1975
- 1975-03-27 US US05/562,695 patent/US3969707A/en not_active Expired - Lifetime
-
1976
- 1976-01-29 FR FR7603003A patent/FR2305825A1/fr active Granted
- 1976-02-23 GB GB6971/76A patent/GB1488473A/en not_active Expired
- 1976-02-24 JP JP51018559A patent/JPS5816557B2/ja not_active Expired
- 1976-03-16 DE DE2610881A patent/DE2610881C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5284932A (en) | 1977-07-14 |
| JPS5816557B2 (ja) | 1983-03-31 |
| FR2305825A1 (fr) | 1976-10-22 |
| DE2610881C2 (de) | 1983-10-27 |
| DE2610881A1 (de) | 1976-10-07 |
| US3969707A (en) | 1976-07-13 |
| GB1488473A (en) | 1977-10-12 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |