FR2305027B1 - - Google Patents
Info
- Publication number
- FR2305027B1 FR2305027B1 FR7602502A FR7602502A FR2305027B1 FR 2305027 B1 FR2305027 B1 FR 2305027B1 FR 7602502 A FR7602502 A FR 7602502A FR 7602502 A FR7602502 A FR 7602502A FR 2305027 B1 FR2305027 B1 FR 2305027B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/559,276 US4005471A (en) | 1975-03-17 | 1975-03-17 | Semiconductor resistor having a high value resistance for use in an integrated circuit semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2305027A1 FR2305027A1 (fr) | 1976-10-15 |
| FR2305027B1 true FR2305027B1 (US07179912-20070220-C00144.png) | 1978-11-10 |
Family
ID=24232976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7602502A Granted FR2305027A1 (fr) | 1975-03-17 | 1976-01-27 | Structure semi-conductrice integree, notamment formant resistance de grande valeur |
Country Status (7)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4229753A (en) * | 1977-08-18 | 1980-10-21 | International Business Machines Corporation | Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor |
| JPS55123157A (en) * | 1979-03-16 | 1980-09-22 | Oki Electric Ind Co Ltd | High-stability ion-injected resistor |
| KR100463367B1 (ko) * | 1995-10-20 | 2005-05-16 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 반도체장치 |
| JP4627822B2 (ja) | 1999-06-23 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US7592980B2 (en) | 2002-06-05 | 2009-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| DE10338689B4 (de) * | 2003-08-22 | 2007-03-29 | Infineon Technologies Ag | Widerstandsbauelement und Verfahren zu dessen Abgleich |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1176088A (en) * | 1951-01-28 | 1970-01-01 | Itt | Temperature Compensated Zener Diode. |
| FR1495766A (US07179912-20070220-C00144.png) * | 1965-12-10 | 1967-12-20 | ||
| US3593069A (en) * | 1969-10-08 | 1971-07-13 | Nat Semiconductor Corp | Integrated circuit resistor and method of making the same |
| US3766446A (en) * | 1969-11-20 | 1973-10-16 | Kogyo Gijutsuin | Integrated circuits comprising lateral transistors and process for fabrication thereof |
| JPS509635B1 (US07179912-20070220-C00144.png) * | 1970-09-07 | 1975-04-14 | ||
| US3729662A (en) * | 1971-03-26 | 1973-04-24 | Ibm | Semiconductor resistor |
| JPS5849997B2 (ja) * | 1972-06-14 | 1983-11-08 | 株式会社島津製作所 | Ｘ センシヤシンサツエイヨウ ホトタイマシキ ｘ センソウチ |
| JPS50103291A (US07179912-20070220-C00144.png) * | 1974-01-11 | 1975-08-15 |
-
1975
- 1975-03-17 US US05/559,276 patent/US4005471A/en not_active Expired - Lifetime
-
1976
- 1976-01-27 FR FR7602502A patent/FR2305027A1/fr active Granted
- 1976-02-10 GB GB5050/76A patent/GB1517251A/en not_active Expired
- 1976-02-20 IT IT20384/76A patent/IT1055398B/it active
- 1976-02-24 JP JP51018562A patent/JPS51114089A/ja active Pending
- 1976-02-28 DE DE19762608214 patent/DE2608214A1/de not_active Ceased
- 1976-03-02 CA CA76247252A patent/CA1048659A/en not_active Expired
-
1980
- 1980-07-10 JP JP9336680A patent/JPS5654060A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5654060A (en) | 1981-05-13 |
| JPS51114089A (en) | 1976-10-07 |
| DE2608214A1 (de) | 1976-10-07 |
| US4005471A (en) | 1977-01-25 |
| CA1048659A (en) | 1979-02-13 |
| FR2305027A1 (fr) | 1976-10-15 |
| IT1055398B (it) | 1981-12-21 |
| GB1517251A (en) | 1978-07-12 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |