FR2302625A1 - Circuit d'amplification - Google Patents

Circuit d'amplification

Info

Publication number
FR2302625A1
FR2302625A1 FR7605472A FR7605472A FR2302625A1 FR 2302625 A1 FR2302625 A1 FR 2302625A1 FR 7605472 A FR7605472 A FR 7605472A FR 7605472 A FR7605472 A FR 7605472A FR 2302625 A1 FR2302625 A1 FR 2302625A1
Authority
FR
France
Prior art keywords
amplification circuit
amplification
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7605472A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2302625A1 publication Critical patent/FR2302625A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Amplifiers (AREA)
FR7605472A 1975-02-28 1976-02-27 Circuit d'amplification Withdrawn FR2302625A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7502375A NL7502375A (nl) 1975-02-28 1975-02-28 Versterkercircuit.

Publications (1)

Publication Number Publication Date
FR2302625A1 true FR2302625A1 (fr) 1976-09-24

Family

ID=19823275

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7605472A Withdrawn FR2302625A1 (fr) 1975-02-28 1976-02-27 Circuit d'amplification

Country Status (8)

Country Link
US (1) US4039860A (fr)
JP (1) JPS51110230A (fr)
CA (1) CA1083234A (fr)
DE (1) DE2605977A1 (fr)
FR (1) FR2302625A1 (fr)
GB (1) GB1481289A (fr)
IT (1) IT1057625B (fr)
NL (1) NL7502375A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0595747A2 (fr) * 1992-10-30 1994-05-04 International Business Machines Corporation Méthode de détection de tension par la précharge variable de ligne de bit pour structures DRAM

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5525858A (en) * 1978-08-11 1980-02-23 Nec Corp Memory unit
JPS5625290A (en) * 1979-08-07 1981-03-11 Nec Corp Semiconductor circuit
US4286174A (en) * 1979-10-01 1981-08-25 Rca Corporation Transition detector circuit
US4307308A (en) * 1979-11-19 1981-12-22 Gte Laboratories Incorporated Digital signal conversion circuit
FR2522158A1 (fr) * 1982-02-23 1983-08-26 Thomson Csf Dispositif de detection de presence ou d'absence d'une quantite de charge, et de memorisation du resultat de cette detection
US4464590A (en) * 1982-06-23 1984-08-07 National Semiconductor Corporation Memory system current sense amplifier circuit
US4513211A (en) * 1982-09-24 1985-04-23 Thomson-Csf Device for detecting the presence or absence of a charge quantity and for storing the result of this detection

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573507A (en) * 1968-09-11 1971-04-06 Northern Electric Co Integrated mos transistor flip-flop circuit
AT335777B (de) * 1972-12-19 1977-03-25 Siemens Ag Regenerierschaltung fur binarsignale nach art eines getasteten flipflops

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0595747A2 (fr) * 1992-10-30 1994-05-04 International Business Machines Corporation Méthode de détection de tension par la précharge variable de ligne de bit pour structures DRAM
EP0595747A3 (fr) * 1992-10-30 1995-04-26 Ibm Méthode de détection de tension par la précharge variable de ligne de bit pour structures DRAM.

Also Published As

Publication number Publication date
GB1481289A (en) 1977-07-27
DE2605977A1 (de) 1976-09-09
CA1083234A (fr) 1980-08-05
US4039860A (en) 1977-08-02
NL7502375A (nl) 1976-08-31
IT1057625B (it) 1982-03-30
JPS51110230A (fr) 1976-09-29

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Legal Events

Date Code Title Description
ST Notification of lapse