FR2298161A1 - Circuit a retroactio - Google Patents

Circuit a retroactio

Info

Publication number
FR2298161A1
FR2298161A1 FR7538318A FR7538318A FR2298161A1 FR 2298161 A1 FR2298161 A1 FR 2298161A1 FR 7538318 A FR7538318 A FR 7538318A FR 7538318 A FR7538318 A FR 7538318A FR 2298161 A1 FR2298161 A1 FR 2298161A1
Authority
FR
France
Prior art keywords
retroactio
circuit
retroactio circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7538318A
Other languages
English (en)
Other versions
FR2298161B3 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of FR2298161A1 publication Critical patent/FR2298161A1/fr
Application granted granted Critical
Publication of FR2298161B3 publication Critical patent/FR2298161B3/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
FR7538318A 1975-01-20 1975-12-15 Circuit a retroactio Granted FR2298161A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/542,253 US3932848A (en) 1975-01-20 1975-01-20 Feedback circuit for allowing rapid charging and discharging of a sense node in a static memory

Publications (2)

Publication Number Publication Date
FR2298161A1 true FR2298161A1 (fr) 1976-08-13
FR2298161B3 FR2298161B3 (fr) 1979-06-29

Family

ID=24162987

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7538318A Granted FR2298161A1 (fr) 1975-01-20 1975-12-15 Circuit a retroactio

Country Status (3)

Country Link
US (1) US3932848A (fr)
JP (1) JPS5184535A (fr)
FR (1) FR2298161A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044341A (en) * 1976-03-22 1977-08-23 Rca Corporation Memory array
US4064405A (en) * 1976-11-09 1977-12-20 Westinghouse Electric Corporation Complementary MOS logic circuit
JPS53117341A (en) * 1977-03-24 1978-10-13 Toshiba Corp Semiconductor memory
JPS5525858A (en) * 1978-08-11 1980-02-23 Nec Corp Memory unit
DE2932605C2 (de) * 1979-08-10 1982-12-16 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung mit MOS-Transistoren zum raschen Bewerten des logischen Zustandes eines Abtastknotens
IT1139929B (it) * 1981-02-06 1986-09-24 Rca Corp Circuito generatore di impulsi utilizzante una sorgente di corrente
EP0085123B1 (fr) * 1982-01-30 1985-06-19 Deutsche ITT Industries GmbH Circuit à transistors à porte isolée destiné à la détection de la tension d'un noeud
US4602354A (en) * 1983-01-10 1986-07-22 Ncr Corporation X-and-OR memory array
JPS62170097A (ja) * 1986-01-21 1987-07-27 Fujitsu Ltd 半導体記憶装置
FR2667193B1 (fr) * 1990-09-25 1993-07-02 Sgs Thomson Microelectronics Circuit de precharge pour la lecture de memoires.
EP0735540B1 (fr) * 1995-03-31 2002-06-19 Infineon Technologies AG Amplificateur de détection basse puissance pour mémoire de type gain cell
KR100243883B1 (ko) * 1995-08-02 2000-02-01 모리시타 요이찌 강유전체 메모리 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3652914A (en) * 1970-11-09 1972-03-28 Emerson Electric Co Variable direct voltage memory circuit
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory

Also Published As

Publication number Publication date
FR2298161B3 (fr) 1979-06-29
US3932848A (en) 1976-01-13
DE2600713B2 (de) 1977-01-20
DE2600713A1 (de) 1976-07-22
JPS5184535A (fr) 1976-07-23

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Legal Events

Date Code Title Description
ST Notification of lapse