FR2295572B1 - - Google Patents

Info

Publication number
FR2295572B1
FR2295572B1 FR7538464A FR7538464A FR2295572B1 FR 2295572 B1 FR2295572 B1 FR 2295572B1 FR 7538464 A FR7538464 A FR 7538464A FR 7538464 A FR7538464 A FR 7538464A FR 2295572 B1 FR2295572 B1 FR 2295572B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7538464A
Other versions
FR2295572A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2295572A1 publication Critical patent/FR2295572A1/fr
Application granted granted Critical
Publication of FR2295572B1 publication Critical patent/FR2295572B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/735Lateral transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7538464A 1974-12-19 1975-12-16 Paire de transistors bipolaires avec regions de base reliees entre elles, et procede pour sa fabrication Granted FR2295572A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742460269 DE2460269A1 (de) 1974-12-19 1974-12-19 Bipolares transistorpaar mit elektrisch leitend miteinander verbundenen basisgebieten und verfahren zur herstellung des transistorpaares

Publications (2)

Publication Number Publication Date
FR2295572A1 FR2295572A1 (fr) 1976-07-16
FR2295572B1 true FR2295572B1 (fr) 1978-04-14

Family

ID=5933916

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7538464A Granted FR2295572A1 (fr) 1974-12-19 1975-12-16 Paire de transistors bipolaires avec regions de base reliees entre elles, et procede pour sa fabrication

Country Status (7)

Country Link
US (1) US4038676A (fr)
JP (1) JPS5186371A (fr)
CA (1) CA1045250A (fr)
DE (1) DE2460269A1 (fr)
FR (1) FR2295572A1 (fr)
GB (1) GB1537057A (fr)
IT (1) IT1051042B (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL83838C (fr) * 1952-12-01 1957-01-15
DE1196794C2 (de) * 1960-03-26 1966-04-07 Telefunken Patent Halbleiterbauelement mit einem scheiben-foermigen Halbleiterkoerper, insbesondere Transistor, und Verfahren zum Herstellen
US3340601A (en) * 1963-07-17 1967-09-12 United Aircraft Corp Alloy diffused transistor
NL158024B (nl) * 1967-05-13 1978-09-15 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
JPS5223715B2 (fr) * 1972-03-27 1977-06-25
US3898483A (en) * 1973-10-18 1975-08-05 Fairchild Camera Instr Co Bipolar memory circuit

Also Published As

Publication number Publication date
CA1045250A (fr) 1978-12-26
JPS5186371A (fr) 1976-07-28
US4038676A (en) 1977-07-26
IT1051042B (it) 1981-04-21
FR2295572A1 (fr) 1976-07-16
GB1537057A (en) 1978-12-29
DE2460269A1 (de) 1976-07-01

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Legal Events

Date Code Title Description
ST Notification of lapse