FR2285676A1 - Memoire morte a composants metal-oxyde-semi-conducteur complementaires - Google Patents

Memoire morte a composants metal-oxyde-semi-conducteur complementaires

Info

Publication number
FR2285676A1
FR2285676A1 FR7431620A FR7431620A FR2285676A1 FR 2285676 A1 FR2285676 A1 FR 2285676A1 FR 7431620 A FR7431620 A FR 7431620A FR 7431620 A FR7431620 A FR 7431620A FR 2285676 A1 FR2285676 A1 FR 2285676A1
Authority
FR
France
Prior art keywords
oxide
complementary metal
semiconductor components
dead memory
dead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7431620A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments France SAS
Original Assignee
Texas Instruments France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments France SAS filed Critical Texas Instruments France SAS
Priority to FR7431620A priority Critical patent/FR2285676A1/fr
Priority to US05/612,968 priority patent/US4037217A/en
Publication of FR2285676A1 publication Critical patent/FR2285676A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
FR7431620A 1974-09-19 1974-09-19 Memoire morte a composants metal-oxyde-semi-conducteur complementaires Withdrawn FR2285676A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7431620A FR2285676A1 (fr) 1974-09-19 1974-09-19 Memoire morte a composants metal-oxyde-semi-conducteur complementaires
US05/612,968 US4037217A (en) 1974-09-19 1975-09-12 Read-only memory using complementary conductivity type insulated gate field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431620A FR2285676A1 (fr) 1974-09-19 1974-09-19 Memoire morte a composants metal-oxyde-semi-conducteur complementaires

Publications (1)

Publication Number Publication Date
FR2285676A1 true FR2285676A1 (fr) 1976-04-16

Family

ID=9143231

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431620A Withdrawn FR2285676A1 (fr) 1974-09-19 1974-09-19 Memoire morte a composants metal-oxyde-semi-conducteur complementaires

Country Status (2)

Country Link
US (1) US4037217A (fr)
FR (1) FR2285676A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4122547A (en) * 1977-08-09 1978-10-24 Harris Corporation Complementary FET drivers for programmable memories
US4287571A (en) * 1979-09-11 1981-09-01 International Business Machines Corporation High density transistor arrays
US4453235A (en) * 1980-05-27 1984-06-05 Supertex, Inc. Integrated memory circuits
US8526209B2 (en) * 2010-12-28 2013-09-03 Stmicroelectronics International N.V. Complementary read-only memory (ROM) cell and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728696A (en) * 1971-12-23 1973-04-17 North American Rockwell High density read-only memory
US3866186A (en) * 1972-05-16 1975-02-11 Tokyo Shibaura Electric Co Logic circuit arrangement employing insulated gate field effect transistors
US3760380A (en) * 1972-06-02 1973-09-18 Motorola Inc Silicon gate complementary mos dynamic ram

Also Published As

Publication number Publication date
US4037217A (en) 1977-07-19

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Legal Events

Date Code Title Description
ST Notification of lapse