FR2284989B1 - - Google Patents
Info
- Publication number
- FR2284989B1 FR2284989B1 FR7431117A FR7431117A FR2284989B1 FR 2284989 B1 FR2284989 B1 FR 2284989B1 FR 7431117 A FR7431117 A FR 7431117A FR 7431117 A FR7431117 A FR 7431117A FR 2284989 B1 FR2284989 B1 FR 2284989B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7431117A FR2284989A1 (fr) | 1974-09-13 | 1974-09-13 | Photodetecteur rapide a faible tension d'alimentation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7431117A FR2284989A1 (fr) | 1974-09-13 | 1974-09-13 | Photodetecteur rapide a faible tension d'alimentation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2284989A1 FR2284989A1 (fr) | 1976-04-09 |
| FR2284989B1 true FR2284989B1 (ru) | 1978-12-29 |
Family
ID=9143078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7431117A Granted FR2284989A1 (fr) | 1974-09-13 | 1974-09-13 | Photodetecteur rapide a faible tension d'alimentation |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2284989A1 (ru) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4255757A (en) * | 1978-12-05 | 1981-03-10 | International Rectifier Corporation | High reverse voltage semiconductor device with fast recovery time with central depression |
| NL8700370A (nl) * | 1987-02-16 | 1988-09-16 | Philips Nv | Stralingsgevoelige halfgeleiderinrichting. |
| EP0383816B1 (en) * | 1988-08-31 | 1992-04-01 | Santa Barbara Research Center | Process methodology for two-sided fabrication of devices on thinned silicon |
| JPH06196727A (ja) * | 1992-12-08 | 1994-07-15 | Terumo Corp | 光電変換装置 |
| JP3091903B2 (ja) * | 1994-08-17 | 2000-09-25 | セイコーインスツルメンツ株式会社 | アバランシェ・フォト・ダイオード及びその製造方法 |
| FR2742878B1 (fr) * | 1995-12-20 | 1998-01-16 | Commissariat Energie Atomique | Detecteur de rayonnements ionisants ultra-mince et procedes de realisation d'un tel detecteur |
| US6259099B1 (en) | 1996-12-18 | 2001-07-10 | Commissariat A L'energie Atomique | Ultra-thin ionizing radiation detector and methods for making same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1072080A (en) * | 1965-12-31 | 1967-06-14 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
-
1974
- 1974-09-13 FR FR7431117A patent/FR2284989A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2284989A1 (fr) | 1976-04-09 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |