FR2284189B1 - - Google Patents

Info

Publication number
FR2284189B1
FR2284189B1 FR7429922A FR7429922A FR2284189B1 FR 2284189 B1 FR2284189 B1 FR 2284189B1 FR 7429922 A FR7429922 A FR 7429922A FR 7429922 A FR7429922 A FR 7429922A FR 2284189 B1 FR2284189 B1 FR 2284189B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7429922A
Other languages
French (fr)
Other versions
FR2284189A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7429922A priority Critical patent/FR2284189A1/fr
Publication of FR2284189A1 publication Critical patent/FR2284189A1/fr
Application granted granted Critical
Publication of FR2284189B1 publication Critical patent/FR2284189B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
FR7429922A 1974-09-03 1974-09-03 Procede de depot de materiau semi-conducteur polycristallin Granted FR2284189A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7429922A FR2284189A1 (fr) 1974-09-03 1974-09-03 Procede de depot de materiau semi-conducteur polycristallin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7429922A FR2284189A1 (fr) 1974-09-03 1974-09-03 Procede de depot de materiau semi-conducteur polycristallin

Publications (2)

Publication Number Publication Date
FR2284189A1 FR2284189A1 (fr) 1976-04-02
FR2284189B1 true FR2284189B1 (ref) 1976-12-31

Family

ID=9142760

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7429922A Granted FR2284189A1 (fr) 1974-09-03 1974-09-03 Procede de depot de materiau semi-conducteur polycristallin

Country Status (1)

Country Link
FR (1) FR2284189A1 (ref)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643893C3 (de) * 1976-09-29 1981-01-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer mit einer Struktur versehenen Schicht auf einem Substrat
US4198246A (en) * 1978-11-27 1980-04-15 Rca Corporation Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475661A (en) * 1966-02-09 1969-10-28 Sony Corp Semiconductor device including polycrystalline areas among monocrystalline areas
FR2030781A6 (fr) * 1967-12-05 1970-11-13 Sony Corp Procédé de fabrication de circuits semi-conducteurs intégrés et circuits ainsi obtenus
DE2052714C3 (de) * 1970-10-27 1978-03-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer integrierten Halbleiteranordnung
DE2056470A1 (en) * 1970-11-17 1972-05-25 Sack W Selective semiconductor growth - on localised heated substrata

Also Published As

Publication number Publication date
FR2284189A1 (fr) 1976-04-02

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Legal Events

Date Code Title Description
ST Notification of lapse