FR2268356A1 - - Google Patents

Info

Publication number
FR2268356A1
FR2268356A1 FR7511806A FR7511806A FR2268356A1 FR 2268356 A1 FR2268356 A1 FR 2268356A1 FR 7511806 A FR7511806 A FR 7511806A FR 7511806 A FR7511806 A FR 7511806A FR 2268356 A1 FR2268356 A1 FR 2268356A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7511806A
Other versions
FR2268356B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of FR2268356A1 publication Critical patent/FR2268356A1/fr
Application granted granted Critical
Publication of FR2268356B1 publication Critical patent/FR2268356B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7511806A 1974-04-18 1975-04-16 Expired FR2268356B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46183674A 1974-04-18 1974-04-18

Publications (2)

Publication Number Publication Date
FR2268356A1 true FR2268356A1 (fr) 1975-11-14
FR2268356B1 FR2268356B1 (fr) 1982-05-14

Family

ID=23834119

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7511806A Expired FR2268356B1 (fr) 1974-04-18 1975-04-16

Country Status (5)

Country Link
JP (1) JPS5543630B2 (fr)
CA (1) CA1008564A (fr)
DE (1) DE2516291A1 (fr)
FR (1) FR2268356B1 (fr)
GB (1) GB1494569A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534444A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of semiconductor device
JPS60138974A (ja) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd 絶縁ゲ−ト型電界効果トランジスタの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342650A (en) * 1964-02-10 1967-09-19 Hitachi Ltd Method of making semiconductor devices by double masking
DE1269738B (de) * 1964-10-20 1968-06-06 Telefunken Patent Verfahren zur Stabilisierung von Halbleiterbauelementen
US3514348A (en) * 1967-05-10 1970-05-26 Ncr Co Method for making semiconductor devices
US3574010A (en) * 1968-12-30 1971-04-06 Texas Instruments Inc Fabrication of metal insulator semiconductor field effect transistors

Also Published As

Publication number Publication date
FR2268356B1 (fr) 1982-05-14
JPS5543630B2 (fr) 1980-11-07
DE2516291A1 (de) 1975-11-06
GB1494569A (en) 1977-12-07
CA1008564A (en) 1977-04-12
JPS50137481A (fr) 1975-10-31

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Legal Events

Date Code Title Description
ST Notification of lapse