FR2264396A1 - - Google Patents

Info

Publication number
FR2264396A1
FR2264396A1 FR7500054A FR7500054A FR2264396A1 FR 2264396 A1 FR2264396 A1 FR 2264396A1 FR 7500054 A FR7500054 A FR 7500054A FR 7500054 A FR7500054 A FR 7500054A FR 2264396 A1 FR2264396 A1 FR 2264396A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7500054A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2264396A1 publication Critical patent/FR2264396A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/307—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in push-pull amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3069—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output
    • H03F3/3071—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output with asymmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3069—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output
    • H03F3/3071—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output with asymmetrical driving of the end stage
    • H03F3/3072—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output with asymmetrical driving of the end stage using Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
FR7500054A 1974-01-02 1975-01-02 Withdrawn FR2264396A1 (en, 2012)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/430,267 US3953875A (en) 1974-01-02 1974-01-02 Capacitor structure and circuit facilitating increased frequency stability of integrated circuits
US05/629,728 US4027271A (en) 1974-01-02 1975-11-06 Capacitor structure and circuit facilitating increased frequency stability of integrated circuits

Publications (1)

Publication Number Publication Date
FR2264396A1 true FR2264396A1 (en, 2012) 1975-10-10

Family

ID=27028525

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7500054A Withdrawn FR2264396A1 (en, 2012) 1974-01-02 1975-01-02

Country Status (5)

Country Link
US (2) US3953875A (en, 2012)
JP (1) JPS5346674B2 (en, 2012)
DE (1) DE2500057C2 (en, 2012)
FR (1) FR2264396A1 (en, 2012)
GB (1) GB1468641A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2399738A1 (fr) * 1977-08-06 1979-03-02 Philips Nv Dispositif semi-conducteur comportant une capacite-mos

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855685B2 (ja) * 1975-09-03 1983-12-10 株式会社日立製作所 ゾウフクカイロ
US4190778A (en) * 1976-01-09 1980-02-26 Siemens Aktiengesellschaft A.C. supplied integrated semi-conductor logic circuit
JPS52102690A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Semiconductor capacitance device
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
US4245231A (en) * 1978-12-26 1981-01-13 Motorola Inc. Combination capacitor and transistor structure for use in monolithic circuits
US4387346A (en) * 1979-08-30 1983-06-07 Fackler John D Bias circuit for a microwave transistor power amplifier
US4464630A (en) * 1980-03-07 1984-08-07 Harris Corporation Transimpedance pre-amplifier
US4399417A (en) * 1980-06-06 1983-08-16 Bell Telephone Laboratories, Incorporated Integrated CRC filter circuit
US4553044A (en) * 1983-05-11 1985-11-12 National Semiconductor Corporation Integrated circuit output driver stage
DE3326957C2 (de) * 1983-07-27 1986-07-31 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Schaltung
DE3326958C2 (de) * 1983-07-27 1986-07-10 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Schaltung zum Verstärken
US4914320A (en) * 1988-07-27 1990-04-03 Unisys Corporation Speed-up circuit for NPN bipolar transistors
US5136357A (en) * 1989-06-26 1992-08-04 Micron Technology, Inc. Low-noise, area-efficient, high-frequency clock signal distribution line structure
JP3922773B2 (ja) * 1997-11-27 2007-05-30 三菱電機株式会社 電力増幅器
US5880517A (en) * 1998-02-04 1999-03-09 Northrop Grumman Corporation Microwave power transistor having matched impedance with integrated DC blocking capacitor and manufacturing method therefor
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3233125A (en) * 1963-01-08 1966-02-01 Trw Semiconductors Inc Transistor technology
US3320484A (en) * 1963-11-12 1967-05-16 Texas Instruments Inc Dielectric devices
GB1203961A (en) * 1967-04-21 1970-09-03 Cambridge Consultants An active capacitance reactance network
US3560278A (en) * 1968-11-29 1971-02-02 Motorola Inc Alignment process for fabricating semiconductor devices
GB1330544A (en) * 1970-07-13 1973-09-19 Hitachi Ltd Transistorized power amplifier circuits
DE2116373A1 (de) * 1971-04-03 1972-10-19 Ferranti Ltd Integrierte Halbleiterschaltungen
US3702405A (en) * 1971-11-17 1972-11-07 Us Air Force Electronically variable capacitance

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2399738A1 (fr) * 1977-08-06 1979-03-02 Philips Nv Dispositif semi-conducteur comportant une capacite-mos

Also Published As

Publication number Publication date
GB1468641A (en) 1977-03-30
DE2500057A1 (de) 1975-07-03
US3953875A (en) 1976-04-27
DE2500057C2 (de) 1982-12-02
US4027271A (en) 1977-05-31
JPS5346674B2 (en, 2012) 1978-12-15
JPS50102277A (en, 2012) 1975-08-13

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Legal Events

Date Code Title Description
ST Notification of lapse