FR2262554A1 - - Google Patents

Info

Publication number
FR2262554A1
FR2262554A1 FR7407044A FR7407044A FR2262554A1 FR 2262554 A1 FR2262554 A1 FR 2262554A1 FR 7407044 A FR7407044 A FR 7407044A FR 7407044 A FR7407044 A FR 7407044A FR 2262554 A1 FR2262554 A1 FR 2262554A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7407044A
Other languages
French (fr)
Other versions
FR2262554B1 (US20050271598A1-20051208-C00001.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR7407044A priority Critical patent/FR2262554B1/fr
Priority to NL7502202A priority patent/NL7502202A/xx
Priority to DK076775A priority patent/DK152059C/da
Priority to GB8021/75A priority patent/GB1490114A/en
Priority to IT20750/75A priority patent/IT1033277B/it
Priority to BE153844A priority patent/BE826094A/xx
Priority to JP2408575A priority patent/JPS5443997B2/ja
Priority to DE2508651A priority patent/DE2508651C3/de
Publication of FR2262554A1 publication Critical patent/FR2262554A1/fr
Priority to US05/772,349 priority patent/US4125425A/en
Application granted granted Critical
Publication of FR2262554B1 publication Critical patent/FR2262554B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7407044A 1974-03-01 1974-03-01 Expired FR2262554B1 (US20050271598A1-20051208-C00001.png)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR7407044A FR2262554B1 (US20050271598A1-20051208-C00001.png) 1974-03-01 1974-03-01
NL7502202A NL7502202A (nl) 1974-03-01 1975-02-25 Werkwijze voor het vervaardigen van lichamen uit smeltbaar kristallijn materiaal in het bijzonder halfgeleidermateriaal, waarbij een doorlopende kristallijne band van dit materiaal vervaardigd wordt, en lichaam, vervaardigd door toepassing van een dergelijke werkwijze.
GB8021/75A GB1490114A (en) 1974-03-01 1975-02-26 Growing crystals from a melt
DK076775A DK152059C (da) 1974-03-01 1975-02-26 Fremgangsmaade til fremstilling af et kontinuert krystallinsk baand ud fra en smelte
IT20750/75A IT1033277B (it) 1974-03-01 1975-02-27 Metodo di fabbricazione di corpidi materiale cristallino fusibile in particolare materiale semi conduttore con il quale viene prodotto un nastro cristallino continuo di detto materiale e corpo fabbricato mediante l impiego di tale metodo
BE153844A BE826094A (nl) 1974-03-01 1975-02-27 Werkwijze voor het vervaardigen van lichamen uit smeltbaar kristallijn materiaal in het bijzonder halfgelei dermateriaal, waarbij een doorlopende kristallijne band van dit materiaal vervaardigd wordt; en lichaam vervaardigd door toepassing van een dergelijke werkwijze
JP2408575A JPS5443997B2 (US20050271598A1-20051208-C00001.png) 1974-03-01 1975-02-28
DE2508651A DE2508651C3 (de) 1974-03-01 1975-02-28 Verfahren zur Herstellung eines ununterbrochenen kristallinen Bandes
US05/772,349 US4125425A (en) 1974-03-01 1977-02-28 Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7407044A FR2262554B1 (US20050271598A1-20051208-C00001.png) 1974-03-01 1974-03-01

Publications (2)

Publication Number Publication Date
FR2262554A1 true FR2262554A1 (US20050271598A1-20051208-C00001.png) 1975-09-26
FR2262554B1 FR2262554B1 (US20050271598A1-20051208-C00001.png) 1977-06-17

Family

ID=9135672

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7407044A Expired FR2262554B1 (US20050271598A1-20051208-C00001.png) 1974-03-01 1974-03-01

Country Status (8)

Country Link
JP (1) JPS5443997B2 (US20050271598A1-20051208-C00001.png)
BE (1) BE826094A (US20050271598A1-20051208-C00001.png)
DE (1) DE2508651C3 (US20050271598A1-20051208-C00001.png)
DK (1) DK152059C (US20050271598A1-20051208-C00001.png)
FR (1) FR2262554B1 (US20050271598A1-20051208-C00001.png)
GB (1) GB1490114A (US20050271598A1-20051208-C00001.png)
IT (1) IT1033277B (US20050271598A1-20051208-C00001.png)
NL (1) NL7502202A (US20050271598A1-20051208-C00001.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2387080A1 (fr) * 1977-04-14 1978-11-10 Westinghouse Electric Corp Procede de production de monocristal de silicium avec un element de chauffage a arc

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4225378A (en) * 1978-12-27 1980-09-30 Burroughs Corporation Extrusion mold and method for growing monocrystalline structures
EP0115711B1 (fr) * 1983-02-09 1986-10-08 Commissariat à l'Energie Atomique Procédé de préparation de plaques d'un matériau métallique ou semi-métallique par moulage sans contact direct avec les parois du moule
JP3875314B2 (ja) 1996-07-29 2007-01-31 日本碍子株式会社 シリコン結晶プレートの育成方法、シリコン結晶プレートの育成装置、シリコン結晶プレートおよび太陽電池素子の製造方法
US10960659B2 (en) 2014-07-02 2021-03-30 Rotoprint Sovrastampa S.R.L. System and method for overprinting on packages and/or containers of different formats

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7004876A (US20050271598A1-20051208-C00001.png) * 1970-04-04 1971-10-06
US3759671A (en) * 1971-10-15 1973-09-18 Gen Motors Corp Horizontal growth of crystal ribbons

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2387080A1 (fr) * 1977-04-14 1978-11-10 Westinghouse Electric Corp Procede de production de monocristal de silicium avec un element de chauffage a arc

Also Published As

Publication number Publication date
GB1490114A (en) 1977-10-26
DK152059B (da) 1988-01-25
FR2262554B1 (US20050271598A1-20051208-C00001.png) 1977-06-17
JPS5443997B2 (US20050271598A1-20051208-C00001.png) 1979-12-22
BE826094A (nl) 1975-08-27
DE2508651C3 (de) 1981-09-17
DK76775A (US20050271598A1-20051208-C00001.png) 1975-11-03
DK152059C (da) 1988-07-11
JPS50126164A (US20050271598A1-20051208-C00001.png) 1975-10-03
IT1033277B (it) 1979-07-10
DE2508651B2 (de) 1980-09-18
NL7502202A (nl) 1975-09-03
DE2508651A1 (de) 1975-09-25

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse