FR2255949A1 - - Google Patents

Info

Publication number
FR2255949A1
FR2255949A1 FR7346938A FR7346938A FR2255949A1 FR 2255949 A1 FR2255949 A1 FR 2255949A1 FR 7346938 A FR7346938 A FR 7346938A FR 7346938 A FR7346938 A FR 7346938A FR 2255949 A1 FR2255949 A1 FR 2255949A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7346938A
Other versions
FR2255949B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7346938A priority Critical patent/FR2255949B1/fr
Priority to DE19742459591 priority patent/DE2459591A1/de
Priority to GB5538374A priority patent/GB1467860A/en
Priority to IT3096974A priority patent/IT1028009B/it
Priority to JP420175A priority patent/JPS5099681A/ja
Priority to BE152008A priority patent/BE823943A/xx
Publication of FR2255949A1 publication Critical patent/FR2255949A1/fr
Application granted granted Critical
Publication of FR2255949B1 publication Critical patent/FR2255949B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7346938A 1973-12-28 1973-12-28 Expired FR2255949B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7346938A FR2255949B1 (fr) 1973-12-28 1973-12-28
DE19742459591 DE2459591A1 (de) 1973-12-28 1974-12-17 Verfahren zum anwachsen einer halbleiterverbindung
GB5538374A GB1467860A (en) 1973-12-28 1974-12-23 Monocrystalline semiconductor rods
IT3096974A IT1028009B (it) 1973-12-28 1974-12-23 Metodo di accrescimento di un composto semiconduttore
JP420175A JPS5099681A (fr) 1973-12-28 1974-12-25
BE152008A BE823943A (nl) 1973-12-28 1974-12-27 Werkwijze voor het aangroeien van een halfgeleiderverbinding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7346938A FR2255949B1 (fr) 1973-12-28 1973-12-28

Publications (2)

Publication Number Publication Date
FR2255949A1 true FR2255949A1 (fr) 1975-07-25
FR2255949B1 FR2255949B1 (fr) 1976-10-08

Family

ID=9129935

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7346938A Expired FR2255949B1 (fr) 1973-12-28 1973-12-28

Country Status (6)

Country Link
JP (1) JPS5099681A (fr)
BE (1) BE823943A (fr)
DE (1) DE2459591A1 (fr)
FR (1) FR2255949B1 (fr)
GB (1) GB1467860A (fr)
IT (1) IT1028009B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2502649A1 (fr) * 1981-03-24 1982-10-01 Mitsubishi Monsanto Chem Procede de fabrication d'un compose monocristallin du groupe iiib-vb
EP0244987A1 (fr) * 1986-04-23 1987-11-11 Sumitomo Electric Industries Limited Procédé de croissance d'un cristal à composants multiples
EP0266227A2 (fr) * 1986-10-31 1988-05-04 The Furukawa Electric Co., Ltd. Procédé pour la croissance de cristaux de composés semi-conducteurs

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2383728A1 (fr) * 1977-03-16 1978-10-13 Radiotechnique Compelec Perfectionnement a un procede de realisation d'un lingot de materiau cristallin
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
JPS6465099A (en) * 1987-09-07 1989-03-10 Hitachi Cable Production of gaas single crystal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2502649A1 (fr) * 1981-03-24 1982-10-01 Mitsubishi Monsanto Chem Procede de fabrication d'un compose monocristallin du groupe iiib-vb
EP0244987A1 (fr) * 1986-04-23 1987-11-11 Sumitomo Electric Industries Limited Procédé de croissance d'un cristal à composants multiples
EP0266227A2 (fr) * 1986-10-31 1988-05-04 The Furukawa Electric Co., Ltd. Procédé pour la croissance de cristaux de composés semi-conducteurs
EP0266227A3 (en) * 1986-10-31 1990-02-07 The Furukawa Electric Co., Ltd. Method and apparatus for growing compound semiconductor crystals

Also Published As

Publication number Publication date
FR2255949B1 (fr) 1976-10-08
GB1467860A (en) 1977-03-23
IT1028009B (it) 1979-01-30
JPS5099681A (fr) 1975-08-07
DE2459591A1 (de) 1975-07-10
BE823943A (nl) 1975-06-27

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Legal Events

Date Code Title Description
ST Notification of lapse