FR2239017A1 - - Google Patents
Info
- Publication number
- FR2239017A1 FR2239017A1 FR7421947A FR7421947A FR2239017A1 FR 2239017 A1 FR2239017 A1 FR 2239017A1 FR 7421947 A FR7421947 A FR 7421947A FR 7421947 A FR7421947 A FR 7421947A FR 2239017 A1 FR2239017 A1 FR 2239017A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19732338388 DE2338388C2 (de) | 1973-07-28 | 1973-07-28 | Feldeffekt-Halbleiteranordnung |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2239017A1 true FR2239017A1 (fr) | 1975-02-21 |
FR2239017B1 FR2239017B1 (fr) | 1976-06-25 |
Family
ID=5888242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7421947A Expired FR2239017B1 (fr) | 1973-07-28 | 1974-06-12 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5419143B2 (fr) |
CA (1) | CA1005930A (fr) |
DE (1) | DE2338388C2 (fr) |
FR (1) | FR2239017B1 (fr) |
GB (1) | GB1471282A (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0000318A1 (fr) * | 1977-07-01 | 1979-01-10 | International Business Machines Corporation | Détecteur de champ magnétique ou électrique, à structure semi-conductrice à effet de champ |
EP0005183A1 (fr) * | 1978-05-03 | 1979-11-14 | International Business Machines Corporation | Détecteur de champs notamment magnétiques du type transistor à effet de champ à semi-conducteur |
EP0225566A2 (fr) * | 1985-12-03 | 1987-06-16 | Itt Industries, Inc. | Transistor à grille perméable |
EP0244140A2 (fr) * | 1986-04-21 | 1987-11-04 | Hitachi, Ltd. | Dispositif semi-conducteur à structure périodique |
FR2700221A1 (fr) * | 1993-01-07 | 1994-07-08 | Fujitsu Ltd | Transistor à effet de champ ayant des propriétés améliorées de capacité parasite et de transconductance. |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5217771A (en) | 1975-07-31 | 1977-02-09 | Sony Corp | Charge transfer device |
JPS5368177A (en) * | 1976-11-30 | 1978-06-17 | Toshiba Corp | Mos type field effect transistor |
JPS55118676A (en) * | 1979-03-07 | 1980-09-11 | Mitsubishi Electric Corp | Semiconductor device |
US4937075A (en) * | 1989-04-27 | 1990-06-26 | Digital Equipment Corporation | Method of making semiconductor chip having field effect transistors which have differing threshold voltages determined in a single masking step |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3374407A (en) * | 1964-06-01 | 1968-03-19 | Rca Corp | Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic |
US3417464A (en) * | 1965-05-21 | 1968-12-24 | Ibm | Method for fabricating insulated-gate field-effect transistors |
GB1145092A (en) * | 1965-06-09 | 1969-03-12 | Mullard Ltd | Improvements in insulated gate field effect semiconductor devices |
DE2044792A1 (de) * | 1970-09-10 | 1972-03-23 | Ibm Deutschland | Feldeffekt-Transistor |
-
1973
- 1973-07-28 DE DE19732338388 patent/DE2338388C2/de not_active Expired
-
1974
- 1974-06-12 FR FR7421947A patent/FR2239017B1/fr not_active Expired
- 1974-06-25 GB GB2802274A patent/GB1471282A/en not_active Expired
- 1974-06-27 CA CA203,550A patent/CA1005930A/en not_active Expired
- 1974-07-16 JP JP8082174A patent/JPS5419143B2/ja not_active Expired
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0000318A1 (fr) * | 1977-07-01 | 1979-01-10 | International Business Machines Corporation | Détecteur de champ magnétique ou électrique, à structure semi-conductrice à effet de champ |
EP0005183A1 (fr) * | 1978-05-03 | 1979-11-14 | International Business Machines Corporation | Détecteur de champs notamment magnétiques du type transistor à effet de champ à semi-conducteur |
EP0225566A2 (fr) * | 1985-12-03 | 1987-06-16 | Itt Industries, Inc. | Transistor à grille perméable |
EP0225566A3 (fr) * | 1985-12-03 | 1989-07-26 | Itt Industries, Inc. | Transistor à grille perméable |
EP0244140A2 (fr) * | 1986-04-21 | 1987-11-04 | Hitachi, Ltd. | Dispositif semi-conducteur à structure périodique |
EP0244140A3 (fr) * | 1986-04-21 | 1988-02-10 | Hitachi, Ltd. | Dispositif semi-conducteur à structure périodique |
FR2700221A1 (fr) * | 1993-01-07 | 1994-07-08 | Fujitsu Ltd | Transistor à effet de champ ayant des propriétés améliorées de capacité parasite et de transconductance. |
US5643811A (en) * | 1993-01-07 | 1997-07-01 | Fujitsu Limited | Method of making field effect transistor for high-frequency operation |
Also Published As
Publication number | Publication date |
---|---|
JPS5419143B2 (fr) | 1979-07-12 |
DE2338388A1 (de) | 1975-02-13 |
FR2239017B1 (fr) | 1976-06-25 |
CA1005930A (en) | 1977-02-22 |
GB1471282A (en) | 1977-04-21 |
JPS5040283A (fr) | 1975-04-12 |
DE2338388C2 (de) | 1982-04-15 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |