FR2236270B1 - - Google Patents

Info

Publication number
FR2236270B1
FR2236270B1 FR7423284A FR7423284A FR2236270B1 FR 2236270 B1 FR2236270 B1 FR 2236270B1 FR 7423284 A FR7423284 A FR 7423284A FR 7423284 A FR7423284 A FR 7423284A FR 2236270 B1 FR2236270 B1 FR 2236270B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7423284A
Other versions
FR2236270A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2236270A1 publication Critical patent/FR2236270A1/fr
Application granted granted Critical
Publication of FR2236270B1 publication Critical patent/FR2236270B1/fr
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061Tipping system, e.g. by rotation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7423284A 1973-07-05 1974-07-04 Expired FR2236270B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2334306A DE2334306B2 (de) 1973-07-05 1973-07-05 Vorrichtung zur Herstellung von epitaktischen Schichten auf Substraten aus Verbindungshalbleiter-Material

Publications (2)

Publication Number Publication Date
FR2236270A1 FR2236270A1 (fr) 1975-01-31
FR2236270B1 true FR2236270B1 (fr) 1978-10-13

Family

ID=5886064

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7423284A Expired FR2236270B1 (fr) 1973-07-05 1974-07-04

Country Status (6)

Country Link
US (1) US3889635A (fr)
JP (1) JPS5738559B2 (fr)
DE (1) DE2334306B2 (fr)
FR (1) FR2236270B1 (fr)
GB (1) GB1433568A (fr)
NL (1) NL7409158A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2847091C3 (de) * 1978-10-28 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Verfahren und Vorrichtung zur Herstellung von Ga↓1↓-↓x↓Al↓x↓ AS:Si-Epitaxieschichten
US4597823A (en) * 1983-09-12 1986-07-01 Cook Melvin S Rapid LPE crystal growth
US4594128A (en) * 1984-03-16 1986-06-10 Cook Melvin S Liquid phase epitaxy

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3522792A (en) * 1967-11-14 1970-08-04 Us Agriculture Device for applying a coating of varying thickness
DE1922528B2 (de) * 1969-05-02 1971-09-30 Streichgeraet zum herstellen von duennschichtchromato graphieplatten
US3791344A (en) * 1969-09-11 1974-02-12 Licentia Gmbh Apparatus for liquid phase epitaxy
US3664294A (en) * 1970-01-29 1972-05-23 Fairchild Camera Instr Co Push-pull structure for solution epitaxial growth of iii{14 v compounds
US3692592A (en) * 1970-02-12 1972-09-19 Rca Corp Method and apparatus for depositing epitaxial semiconductive layers from the liquid phase
US3697330A (en) * 1970-03-27 1972-10-10 Sperry Rand Corp Liquid epitaxy method and apparatus

Also Published As

Publication number Publication date
DE2334306C3 (fr) 1979-04-05
DE2334306A1 (de) 1975-01-30
NL7409158A (nl) 1975-01-07
JPS5039468A (fr) 1975-04-11
GB1433568A (fr) 1976-04-28
JPS5738559B2 (fr) 1982-08-16
DE2334306B2 (de) 1978-08-03
FR2236270A1 (fr) 1975-01-31
US3889635A (en) 1975-06-17

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Legal Events

Date Code Title Description
ST Notification of lapse