FR2235456A1 - - Google Patents

Info

Publication number
FR2235456A1
FR2235456A1 FR7422785A FR7422785A FR2235456A1 FR 2235456 A1 FR2235456 A1 FR 2235456A1 FR 7422785 A FR7422785 A FR 7422785A FR 7422785 A FR7422785 A FR 7422785A FR 2235456 A1 FR2235456 A1 FR 2235456A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7422785A
Other versions
FR2235456B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2235456A1 publication Critical patent/FR2235456A1/fr
Application granted granted Critical
Publication of FR2235456B1 publication Critical patent/FR2235456B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Dram (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7422785A 1973-06-30 1974-06-28 Expired FR2235456B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1973077693U JPS5522640Y2 (fr) 1973-06-30 1973-06-30

Publications (2)

Publication Number Publication Date
FR2235456A1 true FR2235456A1 (fr) 1975-01-24
FR2235456B1 FR2235456B1 (fr) 1978-04-14

Family

ID=13640960

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7422785A Expired FR2235456B1 (fr) 1973-06-30 1974-06-28

Country Status (8)

Country Link
US (1) US3919699A (fr)
JP (1) JPS5522640Y2 (fr)
CA (1) CA1025121A (fr)
DE (1) DE2431580C2 (fr)
FR (1) FR2235456B1 (fr)
GB (1) GB1443588A (fr)
IT (1) IT1015566B (fr)
NL (1) NL7408737A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2361716A1 (fr) * 1976-03-13 1978-03-10 Ass Eng Ltd Circuit electrique de memorisation

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090256A (en) * 1975-05-27 1978-05-16 Motorola, Inc. First-in-first-out register implemented with single rank storage elements
DE2740113A1 (de) * 1977-09-06 1979-03-15 Siemens Ag Monolithisch integrierter halbleiterspeicher
JPS5753897A (en) * 1980-09-14 1982-03-31 Ricoh Co Ltd Signal detecting circuit
EP0065219B1 (fr) * 1981-05-08 1987-08-26 Hitachi, Ltd. Circuit diviseur d'un signal de tension
US4578772A (en) * 1981-09-18 1986-03-25 Fujitsu Limited Voltage dividing circuit
US4656661A (en) * 1984-12-13 1987-04-07 American Telephone And Telegraph Company Switched capacitor coupled line receiver circuit
US6232931B1 (en) 1999-02-19 2001-05-15 The United States Of America As Represented By The Secretary Of The Navy Opto-electronically controlled frequency selective surface
FR2904464A1 (fr) * 2006-07-27 2008-02-01 St Microelectronics Sa Circuit eeprom de retention de charges pour mesure temporelle
CN101601097B (zh) * 2006-07-27 2012-10-17 意法半导体有限公司 用于进行时间测量的电荷保持电路
US8036020B2 (en) * 2006-07-27 2011-10-11 Stmicroelectronics S.A. Circuit for reading a charge retention element for a time measurement
FR2904463A1 (fr) * 2006-07-27 2008-02-01 St Microelectronics Sa Programmation d'un circuit de retention de charges pour mesure temporelle
FR2926382B1 (fr) * 2008-01-11 2010-02-26 Proton World Internat Nv Hierarchisation de cles cryptographiques dans un circuit electronique

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3581292A (en) * 1969-01-07 1971-05-25 North American Rockwell Read/write memory circuit
US3618053A (en) * 1969-12-31 1971-11-02 Westinghouse Electric Corp Trapped charge memory cell
GB1256068A (en) * 1967-12-07 1971-12-08 Plessey Co Ltd Improvements in or relating to logic circuit arrangements
US3729723A (en) * 1970-11-05 1973-04-24 Nippon Electric Co Memory circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3373295A (en) * 1965-04-27 1968-03-12 Aerojet General Co Memory element
US3646525A (en) * 1970-01-12 1972-02-29 Ibm Data regeneration scheme without using memory sense amplifiers
US3652914A (en) * 1970-11-09 1972-03-28 Emerson Electric Co Variable direct voltage memory circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1256068A (en) * 1967-12-07 1971-12-08 Plessey Co Ltd Improvements in or relating to logic circuit arrangements
US3581292A (en) * 1969-01-07 1971-05-25 North American Rockwell Read/write memory circuit
US3618053A (en) * 1969-12-31 1971-11-02 Westinghouse Electric Corp Trapped charge memory cell
US3729723A (en) * 1970-11-05 1973-04-24 Nippon Electric Co Memory circuit

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
(UE US IBM TECHNICAL DISCLOSURE BULLETIN, VOL. 14, NO. 9, FEVRIER 1972, PAGES 2823 ET 2824. ARTICLE: "RANDOMACCESS MOS-CAPACITOR MEMORY" PAR HO ET YU ) *
UE US IBM TECHNICAL DISCLOSURE BULLETIN VOL. 15, NO. 7, DECEMBRE 1972, PAGES 2205 ET 2206. ARTICLE: "DYNAMIC '-FET STORAGE CELL" PAR HELWIG ) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2361716A1 (fr) * 1976-03-13 1978-03-10 Ass Eng Ltd Circuit electrique de memorisation

Also Published As

Publication number Publication date
JPS5025444U (fr) 1975-03-24
US3919699A (en) 1975-11-11
DE2431580A1 (de) 1975-01-09
JPS5522640Y2 (fr) 1980-05-29
FR2235456B1 (fr) 1978-04-14
DE2431580C2 (de) 1986-09-11
IT1015566B (it) 1977-05-20
GB1443588A (en) 1976-07-21
NL7408737A (nl) 1975-01-02
CA1025121A (fr) 1978-01-24

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Legal Events

Date Code Title Description
ST Notification of lapse