FR2220096A1 - - Google Patents
Info
- Publication number
- FR2220096A1 FR2220096A1 FR7407110A FR7407110A FR2220096A1 FR 2220096 A1 FR2220096 A1 FR 2220096A1 FR 7407110 A FR7407110 A FR 7407110A FR 7407110 A FR7407110 A FR 7407110A FR 2220096 A1 FR2220096 A1 FR 2220096A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2310453A DE2310453C3 (de) | 1973-03-02 | 1973-03-02 | Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2220096A1 true FR2220096A1 (fr) | 1974-09-27 |
FR2220096B1 FR2220096B1 (fr) | 1978-08-11 |
Family
ID=5873620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7407110A Expired FR2220096B1 (fr) | 1973-03-02 | 1974-03-01 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3919010A (fr) |
JP (1) | JPS5048882A (fr) |
DE (1) | DE2310453C3 (fr) |
FR (1) | FR2220096B1 (fr) |
GB (1) | GB1457909A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0588067A2 (fr) * | 1992-08-17 | 1994-03-23 | Fuji Electric Co., Ltd. | Transistor à effet de champ MIS haute tension et circuit intégré semi-conducteur |
FR2707041A1 (en) * | 1993-06-23 | 1994-12-30 | Bosch Gmbh Robert | Semiconductor configuration and method of manufacturing it |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5578506A (en) * | 1995-02-27 | 1996-11-26 | Alliedsignal Inc. | Method of fabricating improved lateral Silicon-On-Insulator (SOI) power device |
US5815359A (en) * | 1995-09-08 | 1998-09-29 | Texas Instruments Incorporated | Semiconductor device providing overvoltage protection against electrical surges of positive and negative polarities, such as caused by lightning |
DE19942679C1 (de) * | 1999-09-07 | 2001-04-05 | Infineon Technologies Ag | Verfahren zum Herstellen eines hochvolttauglichen Randabschlusses bei einem nach dem Prinzip der lateralen Ladungskompensation vorgefertigten Grundmaterialwafer |
JP4126872B2 (ja) | 2000-12-12 | 2008-07-30 | サンケン電気株式会社 | 定電圧ダイオード |
US9577079B2 (en) * | 2009-12-17 | 2017-02-21 | Infineon Technologies Ag | Tunnel field effect transistors |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3345221A (en) * | 1963-04-10 | 1967-10-03 | Motorola Inc | Method of making a semiconductor device having improved pn junction avalanche characteristics |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2954308A (en) * | 1956-05-21 | 1960-09-27 | Ibm | Semiconductor impurity diffusion |
US3152928A (en) * | 1961-05-18 | 1964-10-13 | Clevite Corp | Semiconductor device and method |
US3417299A (en) * | 1965-07-20 | 1968-12-17 | Raytheon Co | Controlled breakdown voltage diode |
CH426020A (de) * | 1965-09-08 | 1966-12-15 | Bbc Brown Boveri & Cie | Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement |
US3573115A (en) * | 1968-04-22 | 1971-03-30 | Int Rectifier Corp | Sealed tube diffusion process |
-
1973
- 1973-03-02 DE DE2310453A patent/DE2310453C3/de not_active Expired
-
1974
- 1974-03-01 JP JP49023470A patent/JPS5048882A/ja active Pending
- 1974-03-01 FR FR7407110A patent/FR2220096B1/fr not_active Expired
- 1974-03-01 GB GB939874A patent/GB1457909A/en not_active Expired
- 1974-03-04 US US448042A patent/US3919010A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3345221A (en) * | 1963-04-10 | 1967-10-03 | Motorola Inc | Method of making a semiconductor device having improved pn junction avalanche characteristics |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0588067A2 (fr) * | 1992-08-17 | 1994-03-23 | Fuji Electric Co., Ltd. | Transistor à effet de champ MIS haute tension et circuit intégré semi-conducteur |
EP0588067A3 (fr) * | 1992-08-17 | 1994-04-20 | Fuji Electric Co Ltd | |
US5432370A (en) * | 1992-08-17 | 1995-07-11 | Fuji Electric Co., Ltd. | High withstand voltage M I S field effect transistor and semiconductor integrated circuit |
EP0805499A2 (fr) * | 1992-08-17 | 1997-11-05 | Fuji Electric Co., Ltd. | Transistor à effet de champ MIS à tenue en tension élevée et circuit intégré semi-conducteur |
EP0805499A3 (fr) * | 1992-08-17 | 1997-11-26 | Fuji Electric Co., Ltd. | Transistor à effet de champ MIS à tenue en tension élevée et circuit intégré semi-conducteur |
FR2707041A1 (en) * | 1993-06-23 | 1994-12-30 | Bosch Gmbh Robert | Semiconductor configuration and method of manufacturing it |
Also Published As
Publication number | Publication date |
---|---|
GB1457909A (en) | 1976-12-08 |
DE2310453B2 (de) | 1980-09-11 |
DE2310453C3 (de) | 1981-11-19 |
DE2310453A1 (de) | 1974-09-26 |
FR2220096B1 (fr) | 1978-08-11 |
US3919010A (en) | 1975-11-11 |
JPS5048882A (fr) | 1975-05-01 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |