FR2211713A1 - Electric element for permanent modifiable memory matrix - comprises a diode and a current regulating junction in combination - Google Patents

Electric element for permanent modifiable memory matrix - comprises a diode and a current regulating junction in combination

Info

Publication number
FR2211713A1
FR2211713A1 FR7345990A FR7345990A FR2211713A1 FR 2211713 A1 FR2211713 A1 FR 2211713A1 FR 7345990 A FR7345990 A FR 7345990A FR 7345990 A FR7345990 A FR 7345990A FR 2211713 A1 FR2211713 A1 FR 2211713A1
Authority
FR
France
Prior art keywords
current regulating
permanent
diode
combination
electric element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7345990A
Other languages
English (en)
French (fr)
Other versions
FR2211713B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of FR2211713A1 publication Critical patent/FR2211713A1/fr
Application granted granted Critical
Publication of FR2211713B1 publication Critical patent/FR2211713B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
FR7345990A 1972-12-22 1973-12-21 Electric element for permanent modifiable memory matrix - comprises a diode and a current regulating junction in combination Granted FR2211713A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31738072A 1972-12-22 1972-12-22

Publications (2)

Publication Number Publication Date
FR2211713A1 true FR2211713A1 (en) 1974-07-19
FR2211713B1 FR2211713B1 (OSRAM) 1978-03-10

Family

ID=23233383

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7345990A Granted FR2211713A1 (en) 1972-12-22 1973-12-21 Electric element for permanent modifiable memory matrix - comprises a diode and a current regulating junction in combination

Country Status (1)

Country Link
FR (1) FR2211713A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2294523A2 (fr) * 1974-12-12 1976-07-09 Du Pont Composition dielectrique pouvant etre passee a volonte d'un etat de forte resistance electrique a un etat de faible resistance electrique et inversement

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359521A (en) * 1965-10-26 1967-12-19 Cognitronics Corp Bistable resistance memory device
US3407495A (en) * 1966-05-27 1968-10-29 Qualtronics Corp Process for manufacturing circuit breaker elements

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359521A (en) * 1965-10-26 1967-12-19 Cognitronics Corp Bistable resistance memory device
US3407495A (en) * 1966-05-27 1968-10-29 Qualtronics Corp Process for manufacturing circuit breaker elements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2294523A2 (fr) * 1974-12-12 1976-07-09 Du Pont Composition dielectrique pouvant etre passee a volonte d'un etat de forte resistance electrique a un etat de faible resistance electrique et inversement

Also Published As

Publication number Publication date
FR2211713B1 (OSRAM) 1978-03-10

Similar Documents

Publication Publication Date Title
ES420919A1 (es) Un metodo de fabricar un sistema mejorado de tiras conduc- toras de metalurgia de aluminio sobre un dispositivo semi- conductor de silicio monocristalino.
GB1403371A (en) Semiconductor device arrangements
GB1282326A (en) Method of connecting electrical conductors
GB1440959A (en) Dielectric composition which can be made conductive by electrical activation
GB1071130A (en) Improvements in or relating to the mounting of semi-conductor components
GB1262511A (en) Semiconductor devices and manufacture thereof
GB1088117A (en) Recording on a moving medium
US3413712A (en) Hall-voltage generator unit with amplifying action,and method of producing such unit
JPS51122797A (en) Conductive film
GB1053331A (OSRAM)
GB1294903A (OSRAM)
GB1367180A (en) Magneto-optical storage layers
JPS52109883A (en) Manufacture of silicon semiconductor device
JPS6441254A (en) Resin-sealed type semiconductor device
JPH02312266A (ja) 半導体集積装置
DORIN et al. Electrophysical properties of the insulation layer increases the thermal endurance of a three-layer titanium oxide base current rectifier
JPS5927429U (ja) サ−ミスタ装置
JPS63200414A (ja) 超電導線
MICHALOWSKY SUBSTRATE MATERIALS
JPS5615047A (en) Semiconductor device
FR2020566A1 (en) Electrical resistance element
JPS5884624U (ja) 薄膜磁気ヘツドスライダ
JPS5365063A (en) Semiconductor device
Nakamura et al. Strong Ferromagnetism of F. C. C. Fe--Pt Invar Alloys
JPS5353259A (en) Semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse