FR2204894B1 - - Google Patents

Info

Publication number
FR2204894B1
FR2204894B1 FR7337839A FR7337839A FR2204894B1 FR 2204894 B1 FR2204894 B1 FR 2204894B1 FR 7337839 A FR7337839 A FR 7337839A FR 7337839 A FR7337839 A FR 7337839A FR 2204894 B1 FR2204894 B1 FR 2204894B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7337839A
Other versions
FR2204894A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2204894A1 publication Critical patent/FR2204894A1/fr
Application granted granted Critical
Publication of FR2204894B1 publication Critical patent/FR2204894B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7313—Avalanche transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
FR7337839A 1972-10-25 1973-10-24 Expired FR2204894B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00300481A US3821657A (en) 1972-10-25 1972-10-25 High frequency semiconductor amplifying devices and circuits therefor

Publications (2)

Publication Number Publication Date
FR2204894A1 FR2204894A1 (fr) 1974-05-24
FR2204894B1 true FR2204894B1 (fr) 1978-05-26

Family

ID=23159272

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7337839A Expired FR2204894B1 (fr) 1972-10-25 1973-10-24

Country Status (5)

Country Link
US (1) US3821657A (fr)
JP (1) JPS49135585A (fr)
DE (1) DE2353029A1 (fr)
FR (1) FR2204894B1 (fr)
GB (1) GB1439217A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3940783A (en) * 1974-02-11 1976-02-24 Signetics Corporation Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure
US4109169A (en) * 1976-12-06 1978-08-22 General Electric Company Avalanche memory triode and logic circuits
JPH0612802B2 (ja) * 1983-03-12 1994-02-16 財団法人半導体研究振興会 半導体集積回路装置及びその製造方法
US5091336A (en) * 1985-09-09 1992-02-25 Harris Corporation Method of making a high breakdown active device structure with low series resistance
US4975751A (en) * 1985-09-09 1990-12-04 Harris Corporation High breakdown active device structure with low series resistance
GB2356286B (en) * 1999-07-07 2002-10-23 James Rodger Leitch Low noise semiconductor amplifier
JP5218370B2 (ja) * 2009-10-16 2013-06-26 株式会社豊田中央研究所 電流増幅回路及び光検出デバイス
JP5604901B2 (ja) * 2010-02-18 2014-10-15 株式会社豊田中央研究所 電流増幅素子
EP3435419A1 (fr) * 2017-07-26 2019-01-30 ams AG Dispositif semi-conducteur ayant une capacité de comptage d'électrons uniques avec un transistor bipolaire à avalanche

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3054972A (en) * 1961-02-21 1962-09-18 Bell Telephone Labor Inc Negative resistance semiconductive device

Also Published As

Publication number Publication date
GB1439217A (en) 1976-06-16
JPS49135585A (fr) 1974-12-27
US3821657A (en) 1974-06-28
DE2353029A1 (de) 1974-05-09
FR2204894A1 (fr) 1974-05-24

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Legal Events

Date Code Title Description
ST Notification of lapse